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APTM120U10SCAVG
Single switch
Series & SiC parallel diodes
MOSFET Power Module
D
DK
VDSS = 1200V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
SK
S
G, SK and DK terminals are for control signals only
(not for power)
•
SiC Parallel Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
•
Kelvin source for easy drive
Kelvin drain for voltage monitoring
Very low stray inductance
- Symmetrical design
- M5 power connectors
- M3 power connectors
High level of integration
AlN substrate for improved MOSFET thermal
performance
DK
S
SK
G
D
•
•
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–9
APTM120U10SCAVG – Rev 3
G
October, 2013
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
APTM120U10SCAVG
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Max ratings
1200
116
86
464
±30
120
3290
24
50
3200
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Unit
V
A
V
mΩ
W
A
mJ
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 1200V
Tj = 25°C
VGS = 0V,VDS = 1000V
Tj = 125°C
VGS = 10V, ID = 58A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Typ
100
3
Max
1
3
120
5
±400
Unit
mA
mΩ
V
nA
Dynamic Characteristics
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 600V
ID = 116A
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
RG =1.2Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
Min
Typ
28.9
4.4
0.8
Max
nF
1100
128
nC
716
20
17
ns
245
62
3
mJ
4.6
5.5
mJ
5.6
0.038
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Unit
October, 2013
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
°C/W
2–9
APTM120U10SCAVG – Rev 3
Symbol
Ciss
Coss
Crss
APTM120U10SCAVG
Series diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1000V
DC Forward Current
IF = 240A
IF = 480A
Diode Forward Voltage
IF = 240A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Test Conditions
IF = 240A
VR = 667V
di/dt = 800A/µs
Min
Typ
Max
Unit
500
V
µA
A
1000
Tj = 125°C
240
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
3
Tj = 125°C
14.4
Tc = 100°C
Junction to Case Thermal Resistance
2.5
V
ns
µC
0.19
°C/W
Typ
Max
Unit
V
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
IF = 90A
Tj = 175°C
IF = 90A, VR = 1200V
di/dt = 4500A/µs
288
504
90
1.6
2.3
1800
9000
f = 1MHz, VR = 200V
864
f = 1MHz, VR = 400V
621
SiC Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
DC Forward Current
VF
Diode Forward Voltage
QC
Total Capacitive Charge
C
Total Capacitance
RthJC
Min
1200
VR=1200V
A
1.8
3
720
Junction to Case Thermal Resistance
µA
V
nC
pF
0.22
°C/W
Thermal and package characteristics
Wt
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Min
4000
-40
-40
-40
-40
3
2
1
Max
150
TJmax -25
125
100
5
3.5
1.5
300
Unit
V
°C
N.m
October, 2013
Torque
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
M6
To heatsink
M5
Mounting torque
For terminals
M3
Package Weight
g
3–9
APTM120U10SCAVG – Rev 3
Symbol
VISOL
TJ
TJOP
TSTG
TC
APTM120U10SCAVG
SP6 Package outline (dimensions in mm)
www.microsemi.com
4–9
APTM120U10SCAVG – Rev 3
October, 2013
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM120U10SCAVG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.9
0.035
0.03
0.7
0.025
0.5
0.02
0.015
0.3
0.01
0.005
0
0.00001
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
320
280
ID, Drain Current (A)
6V
5.5V
120
80
5V
40
240
200
160
120
80
TJ=25°C
40
4.5V
0
0
5
10
15
20
25
TJ=125°C
0
30
0
Normalized to
VGS=10V @ 58A
1.2
VGS=10V
1.1
VGS=20V
1
0.9
0.8
0
40
80
120
160
200
3
4
5
6
7
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
1.4
1.3
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
240
100
80
60
40
20
October, 2013
ID, Drain Current (A)
200
160
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
280
7V
0
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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5–9
APTM120U10SCAVG – Rev 3
VGS=15, 10V
240
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=58A
2.0
1.5
1.0
0.5
25
Threshold Voltage vs Temperature
100
125
150
Maximum Safe Operating Area
1000
1.0
ID, Drain Current (A)
0.9
0.8
0.7
100µs
limited by R DSon
100
1ms
10ms
10
0.6
Single pulse
TJ =150°C
TC=25°C
1
25
50
75
100
125
1
150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
10000
Coss
Crss
1000
100
0
10
20
30
40
10
100
1000
1200
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=116A
VDS=240V
12
TJ =25°C
10
VDS=600V
8
VDS=960V
6
4
2
0
50
VDS, Drain to Source Voltage (V)
0
300
600
900
1200
October, 2013
VGS (TH), Threshold Voltage
(Normalized)
75
T J, Junction Temperature (°C)
T J, Junction Temperature (°C)
1.1
C, Capacitance (pF)
50
1500
Gate Charge (nC)
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6–9
APTM120U10SCAVG – Rev 3
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM120U10SCAVG
APTM120U10SCAVG
Delay Times vs Current
Rise and Fall times vs Current
100
300
t r and t f (ns)
VDS=800V
R G =1.2Ω
TJ=1 25 °C
L=100µH
150
100
50
0
60
90
120
150
tr
40
20
td(on)
30
60
0
180
30
120
150
180
24
12
VDS=800V
R G =1.2Ω
TJ=1 25 °C
L=100µH
9
Eon
Switching Energy (mJ)
6
3
Eoff
0
30
60
90
120
150
VDS=800V
I D=116A
TJ=1 25 °C
L=100µH
20
Eoff
16
12
Eon
8
4
180
0
ID, Drain Current (A)
2
4
6
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
175
ZCS
150
ZVS
125
100
75
VDS=800V
D=50%
R G =1.2Ω
TJ=1 25 °C
TC =75 °C
50
25
Hard
switching
TJ=150°C
100
TJ =25°C
10
1
0
50
70
90
110
0.2 0.4 0.6 0.8
ID, Drain Current (A)
1
October, 2013
Switching Energy (mJ)
90
Switching Energy vs Gate Resistance
Switching Energy vs Current
Frequency (kHz)
60
ID, Drain Current (A)
ID, Drain Current (A)
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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7–9
APTM120U10SCAVG – Rev 3
t d(on) and t d(off) (ns)
80
200
tf
VDS=800V
R G =1.2Ω
TJ=1 25 °C
L=100µH
td(off)
250
APTM120U10SCAVG
SiC Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.24
0.9
0.2
0.7
0.16
0.5
0.12
0.3
0.08
0.1
0.04
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
900
TJ=25°C
160
IR Reverse Current (µA)
IF Forward Current (A)
Forward Characteristics
TJ=75°C
120
80
TJ=125°C
TJ=175°C
40
750
600
450
300
0.5
1
1.5
2
2.5
3
TJ=125°C
150
0
0
TJ=75°C
3.5
VF Forward Voltage (V)
0
400
TJ=175°C
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
5400
4500
3600
2700
1800
900
1
10
100
VR Reverse Voltage
October, 2013
0
1000
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8–9
APTM120U10SCAVG – Rev 3
C, Capacitance (pF)
6300
APTM120U10SCAVG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM120U10SCAVG – Rev 3
October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.