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APTC80AM75SCG
VDSS = 800V
RDSon = 75mΩ max @ Tj = 25°C
ID = 56A @ Tc = 25°C
Phase leg Series & SiC parallel diodes
Super Junction MOSFET Power Module
VBUS
Q1
G1
OUT
S1
Q2
G2
S2
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
0/VBUS
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
800
56
43
232
±30
75
568
17
0.5
670
Unit
V
A
October, 2013
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–8
APTC80AM75SCG – Rev 4
Symbol
VDSS
APTC80AM75SCG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 800V
VGS = 0V,VDS = 800V
VGS = 10V, ID = 28A
VGS = VDS, ID = 4mA
VGS = ±20 V, VDS = 0V
2.1
3
Max
100
1000
75
3.9
±200
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
9015
4183
215
pF
364
VGS = 10V
VBus = 400V
ID = 56A
48
nC
184
10
13
83
Inductive switching @ 125°C
VGS = 15V
VBus = 533V
ID = 56A
RG = 1.2Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 56A, RG = 1.2Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 56A, RG = 1.2Ω
ns
35
583
µJ
556
1020
µJ
684
0.22
°C/W
Max
Unit
V
µA
Series diode ratings and characteristics
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
300
Tc = 80°C
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 667V
di/dt = 400A/µs
Typ
Tj = 125°C
120
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
1.52
Tj = 125°C
7.2
Junction to Case Thermal Resistance
A
2.5
V
ns
µC
0.46
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October, 2013
IF
Min
1000
°C/W
2–8
APTC80AM75SCG – Rev 4
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1000V
APTC80AM75SCG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1200V
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
300
600
30
1.6
2.6
1200
6000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 30A
QC
Total Capacitive Charge
IF = 30A, VR = 1200V
di/dt =1600A/µs
168
Q
Total Capacitance
f = 1MHz, VR = 200V
270
f = 1MHz, VR = 400V
198
RthJC
Junction to Case Thermal Resistance
Unit
V
µA
A
1.8
3.0
V
nC
pF
0.45
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To heatsink
M6
Mounting torque
For terminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
150
TJmax -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–8
APTC80AM75SCG – Rev 4
October, 2013
SP6 Package outline (dimensions in mm)
APTC80AM75SCG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0
0.00001
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
200
160
VGS=15&10V
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty
6.5V
120
100
ID, Drain Current (A)
6V
80
5.5V
60
5V
40
4.5V
20
150
100
TJ=125°C
50
TJ=25°C
4V
0
0
5
10
15
20
0
25
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 28A
VGS=10V
1.2
VGS=20V
1.1
3
4
5
6
7
8
DC Drain Current vs Case Temperature
60
1.4
1.3
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS (on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
1
0.9
50
40
30
20
10
October, 2013
0
0
0.8
0
20
40
60
80
100
120
25
50
75
100
125
150
TC, Case Temperature (°C)
ID, Drain Current (A)
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4–8
APTC80AM75SCG – Rev 4
ID, Drain Current (A)
140
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
ON resistance vs Temperature
RDS (on), Drain to Source ON resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
25
TJ, Junction Temperature (°C)
75
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
ID, Drain Current (A)
1.0
0.9
0.8
50
75
100
125
1
Coss
1000
Crss
100
10
0
10
20
30
40
VGS , Gate to Source Voltage (V)
10000
100ms
0
TC, Case Temperature (°C)
Ciss
1ms
Single pulse
TJ =150°C
TC=25°C
1
150
Capacitance vs Drain to Source Voltage
100000
100µs
10
0.7
25
limited by
R DSon
100
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I D=56A
TJ=2 5 °C
12
VDS=160V
VDS=400V
10
8
6
VDS=640V
4
2
0
50
0
50 100 150 200 250 300 350 400
October, 2013
VGS (TH), Threshold Voltage
(Normalized)
50
TJ, Junction Temperature (°C)
1.1
C, Capacitance (pF)
VGS=10V
I D= 28A
Gate Charge (nC)
VDS , Drain to Source Voltage (V)
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5–8
APTC80AM75SCG – Rev 4
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTC80AM75SCG
APTC80AM75SCG
Delay Times vs Current
Rise and Fall times vs Current
50
100
40
80
VDS=533V
R G =1.2Ω
TJ=1 25 °C
L=100µH
60
tr and t f (ns)
40
td(on)
20
tf
20
tr
10
0
0
30
40
50
60
70
80
20
90
ID, Drain Current (A)
Switching Energy vs Current
VDS=533V
R G =1.2Ω
TJ=1 25 °C
L=100µH
Eon
Eoff
0.8
0.4
40 50 60 70
ID, Drain Current (A)
80
2
1.5
Eon
1
Eoff
ZVS
ZCS
250
200
100
50
Hard
Switching
0
10
20
30
40
0
2.5
5
7.5
10
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
350
VDS=533V
D=50%
R G =1.2Ω
TJ=1 25 °C
TC =75 °C
90
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
150
80
2.5
90
400
300
70
VDS=533V
I D=56A
TJ=1 25 °C
L=100µH
3
0.5
0
30
60
Switching Energy vs Gate Resistance
1.2
20
50
3.5
Switching Energy (mJ)
Eon and Eoff (mJ)
40
ID, Drain Current (A)
2
1.6
30
50
TJ=150°C
100
TJ =25°C
10
1
ID, Drain Current (A)
0.2
0.6
1
1.4
October, 2013
20
Frequency (kHz)
VDS=533V
R G=1.2Ω
TJ=1 25 °C
L=100µH
30
1.8
VSD, Source to Drain Voltage (V)
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6–8
APTC80AM75SCG – Rev 4
td(on) and td(off) (ns)
td(off)
APTC80AM75SCG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
60
1200
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
50
TJ=75°C
40
30
TJ=125°C
20
TJ=175°C
10
900
600
0.5
1
1.5
2
2.5
3
TJ=125°C
300
0
0
TJ=75°C
3.5
VF Forward Voltage (V)
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
2400
2000
1600
1200
800
400
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
www.microsemi.com
7–8
APTC80AM75SCG – Rev 4
1
October, 2013
0
APTC80AM75SCG
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTC80AM75SCG – Rev 4
October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.