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APTM100A13SCG
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
VDSS = 1000V
RDSon = 130mΩ typ @ Tj = 25°C
ID = 65A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Q1
G1
OUT
S1
Q2
G2
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
0/VBUS
S2
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
65
49
240
±30
156
1250
24
30
1300
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
APTM100A13SCG – Rev 4 October, 2013
Symbol
VDSS
APTM100A13SCG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Typ
130
3
Max
600
2
156
5
±450
Unit
µA
mA
mΩ
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
15.2
2.6
0.42
nF
562
VGS = 10V
VBus = 500V
ID = 65A
75
nC
363
9
9
50
Inductive switching @125°C
VGS = 15V
VBus = 667V
ID = 65A
RG = 0.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5Ω
ns
24
1278
µJ
462
2671
µJ
570
0.1
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
Characteristic
Test Conditions
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current VR=1000V
DC Forward Current
IF = 120A
IF = 240A
Diode Forward Voltage
IF = 120A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 120A
VR = 667V
di/dt = 400A/µs
Junction to Case Thermal Resistance
Min
1000
Typ
350
Tc = 100°C
Tj = 125°C
120
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
1520
Tj = 125°C
7200
2.5
V
ns
nC
0.46
www.microsemi.com
°C/W
2–8
APTM100A13SCG – Rev 4 October, 2013
Symbol
VRRM
IRM
IF
APTM100A13SCG
SiC Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Min
1200
Tj = 25°C
Tj = 125°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
Typ
Max
400
800
40
1.6
2.6
1600
8000
VF
Diode Forward Voltage
IF = 40A
QC
Total Capacitive Charge
IF = 40A, VR = 600V
di/dt =2000A/µs
112
Q
Total Capacitance
f = 1MHz, VR = 200V
360
f = 1MHz, VR = 400V
264
RthJC
Junction to Case Thermal Resistance
Unit
V
µA
A
1.8
3.0
V
nC
pF
0.35
°C/W
Max
Unit
V
Thermal and package characteristics
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
Mounting torque
For terminals
Package Weight
M6
M5
Min
4000
-40
-40
-40
3
2
Typ
150
125
100
5
3.5
300
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–8
APTM100A13SCG – Rev 4 October, 2013
SP6 Package outline (dimensions in mm)
APTM100A13SCG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
360
6.5V
120
6V
90
60
5.5V
30
5V
300
240
180
TJ=125°C
120
60
0
4
8
12
16
20
24
TJ=25°C
0
28
0
VGS=10V
1.2
VGS=20V
1.1
1
0.9
0.8
30
60
4
5
6
7
8
9 10
70
Normalized to
VGS=10V @ 32.5A
0
3
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
90
120
150
180
ID, Drain Current (A)
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–8
APTM100A13SCG – Rev 4 October, 2013
0
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
7V
VGS=15&10V
150
ID, Drain Current (A)
ID, Drain Current (A)
180
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=32.5A
2.0
1.5
1.0
0.5
0.0
25
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
0.95
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
75
TJ, Junction Temperature (°C)
T J, Junction Temperature (°C)
1.00
0.90
0.85
0.80
0.75
0.70
100µs
limited by RDSon
100
1ms
10
Single pulse
TJ =150°C
TC=25°C
0.65
0.60
10ms
1
25
50
75
100
125
1
150
Ciss
10000
Coss
Crss
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
1000
100
0
10
20
30
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
50
40
50
VDS , Drain to Source Voltage (V)
www.microsemi.com
Gate Charge vs Gate to Source Voltage
14
VDS=200V
ID=65A
12
TJ =25°C
10
VDS=500V
8
VDS=800V
6
4
2
0
0
120 240 360 480 600 720 840
Gate Charge (nC)
5–8
APTM100A13SCG – Rev 4 October, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM100A13SCG
APTM100A13SCG
Delay Times vs Current
Rise and Fall times vs Current
50
td(off)
50
40
40
tr and tf (ns)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
30
20
td(on)
30
20
10
10
0
30
40
50
60
70
80
90 100
20
30
40 50 60 70 80
ID, Drain Current (A)
ID, Drain Current (A)
4
3
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
Switching Energy (mJ)
4
90 100
Switching Energy vs Gate Resistance
Switching Energy vs Current
5
Switching Energy (mJ)
tr
0
20
Eon
2
Eoff
1
0
Eon
3
2
Eoff
VDS=667V
ID=65A
TJ=125°C
L=100µH
1
0
20
30
40 50 60 70 80
ID, Drain Current (A)
90 100
0
1
2
3
4
5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
ZCS
400
300
IDR, Reverse Drain Current (A)
500
Frequency (kHz)
tf
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
VDS=667V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C
Hars
switching
200
ZVS
100
0
10
20
30
40
50
ID, Drain Current (A)
60
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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6–8
APTM100A13SCG – Rev 4 October, 2013
td(on) and td(off) (ns)
60
APTM100A13SCG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
1600
TJ=25°C
70
60
TJ=75°C
50
40
TJ=125°C
30
20
TJ=175°C
10
IR Reverse Current (µA)
IF Forward Current (A)
Reverse Characteristics
Forward Characteristics
80
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
1200
800
TJ=75°C
TJ=125°C
400
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
2400
2000
1600
1200
800
400
0
1
10
100
VR Reverse Voltage
1000
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7–8
APTM100A13SCG – Rev 4 October, 2013
C, Capacitance (pF)
2800
APTM100A13SCG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM100A13SCG – Rev 4 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.