APTC80AM75SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS Q1 VDSS = 800V RDSon = 75mΩ max @ Tj = 25°C ID = 56A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • G1 OUT - S1 Q2 G2 0/VBUS S2 VBUS 0/VBUS OUT • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration • S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 56 43 232 ±30 75 568 17 0.5 670 Unit V A V mΩ W A July, 2006 S2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC80AM75SCG – Rev 2 G1 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated APTC80AM75SCG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 800V VGS = 10V, ID = 28A VGS = VDS, ID = 4mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2.1 3 Min Typ 9015 4183 215 364 VGS = 10V VBus = 400V ID = 56A Test Conditions IF = 60A IF = 120A IF = 60A Unit Max Unit µA mΩ V nA pF nC 184 10 13 83 583 1020 Typ Max 350 600 Tj = 125°C Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 66 Tj = 125°C 300 www.microsemi.com µJ 684 60 1.1 1.4 0.9 IF = 60A VR = 133V di/dt = 400A/µs µJ 556 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 35 Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 56A, R G = 1.2Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 56A, R G = 1.2Ω VR=200V Max 100 1000 75 3.9 ±200 48 Inductive switching @ 125°C VGS = 15V VBus = 533V ID = 56A R G = 1.2Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 800V Series diode ratings and characteristics IRM Min Unit V µA A 1.15 V July, 2006 Symbol ns nC 2–7 APTC80AM75SCG – Rev 2 Electrical Characteristics APTC80AM75SCG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 300 600 30 1.6 2.6 1200 6000 IF DC Forward Current VF Diode Forward Voltage IF = 30A QC Total Capacitive Charge IF = 30A, VR = 600V di/dt =1600A/µs 84 Q Total Capacitance f = 1MHz, VR = 200V 270 f = 1MHz, VR = 400V 198 Thermal and package characteristics Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Unit V µA A 1.8 3.0 V nC pF Max 0.22 0.65 0.45 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC80AM75SCG – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTC80AM75SCG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 160 200 VGS =15&10V 6.5V 120 100 ID, Drain Current (A) 6V 80 5.5V 60 5V 40 4.5V 20 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 150 100 TJ =125°C 50 TJ =25°C T J=125°C 4V 0 T J=-55°C 0 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 60 Normalized to VGS=10V @ 28A 1.3 I D, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 1 0.9 50 40 30 20 10 0 0.8 0 20 40 60 80 100 I D, Drain Current (A) 120 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance TJ =-55°C 4–7 APTC80AM75SCG – Rev 2 ID, Drain Current (A) 140 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0 50 100 Coss 1000 Crss 100 10 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=56A T J=25°C 14 12 V DS =160V VDS=400V 10 8 VDS=640V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 50 100 150 200 250 300 350 400 Gate Charge (nC) July, 2006 0 100ms 0 VGS, Gate to Source Voltage (V) 10000 1ms Single pulse TJ =150°C TC=25°C 1 TC, Case Temperature (°C) Ciss 100µs 10 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 100 0.7 -50 C, Capacitance (pF) V GS=10V ID= 28A www.microsemi.com 5–7 APTC80AM75SCG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80AM75SCG APTC80AM75SCG Delay Times vs Current Rise and Fall times vs Current 50 100 40 V DS=533V RG=1.2Ω T J=125°C L=100µH 60 40 tr and tf (ns) td(on) 20 tf 20 tr 10 0 0 20 30 40 50 60 70 I D, Drain Current (A) 80 90 20 1.6 Switching Energy (mJ) Eon and Eoff (mJ) 3.5 VDS=533V RG=1.2Ω TJ=125°C L=100µH Eon 1.2 Eoff 0.8 0.4 30 40 50 60 70 ID, Drain Current (A) 80 2.5 IDR , Reverse Drain Current (A) 350 ZVS 250 200 150 100 50 V DS=533V D=50% R G=1.2Ω T J=125°C T C=75°C 90 Hars Switching 0 Eoff 1.5 Eon 1 Eoff 0 Operating Frequency vs Drain Current ZCS 80 2 90 400 300 40 50 60 70 I D, Drain Current (A) V DS=533V ID=56A T J=125°C L=100µH 3 0.5 0 20 30 Switching Energy vs Gate Resistance Switching Energy vs Current 2 2.5 5 7.5 Gate Resistance (Ohms) 10 Source to Drain Diode Forward Voltage 1000 100 10 10 15 20 25 30 35 40 45 50 55 ID, Drain Current (A) 1 0.2 TJ =150°C TJ=25°C 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) July, 2006 Frequency (kHz) VDS=533V RG=1.2Ω T J=125°C L=100µH 30 www.microsemi.com 6–7 APTC80AM75SCG – Rev 2 td(on) and td(off) (ns) t d(off) 80 APTC80AM75SCG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 60 1200 IR Reverse Current (µA) I F Forward Current (A) TJ=25°C 50 TJ=75°C 40 30 T J=125°C 20 TJ=175°C 10 900 600 0.5 1 1.5 2 2.5 3 T J=125°C 300 0 0 T J=75°C 3.5 VF Forward Voltage (V) TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 July, 2006 10 100 VR Reverse Voltage APTC80AM75SCG – Rev 2 1