JANS 2N3498L thru JANS 2N3501L RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 Qualified Levels: JANSM, JANSD, JANSP, JANSL and JANSR DESCRIPTION This family of JANS 2N3498L through JANS 2N3501L epitaxial, planar transistors are military qualified in five RHA (Radiation Hardness Assurance) levels for high-reliability applications. These devices are also available in TO-39 and low profile surface mount UB packaging. Microsemi also offers numerous other radiation hardened transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3498 through 2N3501 series numbers. • RHA level JAN qualifications per MIL-PRF-19500/366 (see part nomenclature for all options). • RoHS compliant by design. TO-5 Package Also available in: TO-39 (TO-205AD) package (leaded) JANS 2N3498 – 2N3501 APPLICATIONS / BENEFITS • • • • General purpose transistors for medium power applications requiring high frequency switching and radiation harness. Longer leaded TO-5 package. Lightweight. Military and other high-reliability applications. UB package (surface mount) JANS 2N3501UB MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted Collector-Emitter Voltage VCEO 2N3498L 2N3499L 100 Collector-Base Voltage VCBO 100 150 V Emitter-Base Voltage VEBO 6.0 6.0 V IC 500 300 mA Parameters / Test Conditions Symbol Collector Current Thermal Resistance Junction-to-Ambient Total Power Dissipation Operating & Storage Junction Temperature Range V o C/W RӨJC 30 o C/W PT 1.0 5.0 W TJ, Tstg -65 to +200 °C (1) @ TA = +25 °C (2) @ TC = +25 °C Unit 175 RӨJA Thermal Resistance Junction-to-Case 2N3500L 2N3501L 150 Notes: 1. See figure 1. 2. See figure 2. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 1 of 8 JANS 2N3498L thru JANS 2N3501L MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are gold plated. MARKING: Part number, date code, manufacturer’s ID. WEIGHT: Approximately 1.14 grams. See Package Dimensions on last page. PART NOMENCLATURE JANSM 2N3498 L Reliability Level JANSM = 3K Rads (Si) JANSD = 10K Rads (Si) JANSP = 30K Rads (Si) JANSL = 50K Rads (Si) JANSR = 100K Rads (Si) Symbol Cobo ICEO ICEX IEBO hFE VCEO VCBO VEBO Longer Leaded Package JEDEC type number SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance Collector cutoff current, base open Collector cutoff current, circuit between base and emitter Emitter cutoff current, collector open Common-emitter static forward current transfer ratio Collector-emitter voltage, base open Collector-emitter voltage, emitter open Emitter-base voltage, collector open T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 2 of 8 JANS 2N3498L thru JANS 2N3501L ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mA, pulsed 2N3498L, 2N3500L, Collector-Base Cutoff Current VCB = 50 V 2N3498L, VCB = 75 V 2N3500L, 2N3498L, VCB = 100 V 2N3500L, VCB = 150 V Emitter-Base Cutoff Current VEB = 4.0 V VEB = 6.0 V ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V 2N3498L, 2N3499L, 2N3498L, 2N3499L, 2N3498L, 2N3499L, 2N3498L, 2N3499L, IC = 300 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Symbol Min. 2N3499L 2N3501L V(BR)CEO 100 150 2N3499L 2N3501L 2N3499L 2N3501L ICBO 50 50 10 10 nA nA µA µA IEBO 25 10 nA µA 2N3500L 2N3501L 2N3500L 2N3501L 2N3500L 2N3501L 2N3500L 2N3501L 2N3500L 2N3501L 2N3498L 2N3499L hFE 20 35 25 50 35 75 40 100 15 20 15 20 Max. Unit V 120 300 Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 300 mA, IB = 30 mA IC = 150 mA, IB = 15 mA All Types 2N3498L, 2N3499L 2N3500L, 2N3501L VCE(sat) 0.2 0.6 0.4 V Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 300 mA, IB = 30 mA IC = 150 mA, IB = 15 mA All Types 2N3498L, 2N3499L 2N3500L, 2N3501L VBE(sat) 0.8 1.4 1.2 V DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 20 mA, VCE = 20 V, f = 100 MHz Output Capacitance VCB = 10 V, IE = 0, 2N3498L, 2N3499L 100 kHz < f < 1.0 MHz 2N3500L, 2N3501L Cobo 10 8.0 pF Input Capacitance VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz Cibo 80 pF |hfe| 1.5 8.0 (1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%. T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 3 of 8 JANS 2N3498L thru JANS 2N3501L ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VEB = 5 V; IC = 150 mA; IB1 = 15 mA Turn-Off Time IC = 150 mA; IB1 = IB2 = -15 mA Symbol Min. Max. Unit ton 115 ns toff 1150 ns Collector Current IC (Milliamperes) SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053) DC Tests TC = +25 ºC, tr > 10 ns; 1 Cycle, t = 1.0 s Test 1 VCE = 10 V, IC = 500 mA 2N3498L, 2N3499L VCE = 16.67 V, IC = 300 mA 2N3500L, 2N3501L Test 2 VCE = 50 V, IC = 100 mA All Types Test 3 VCE = 80 V, IC = 40 mA All Types Clamped Switching TA = +25 ºC Test 1 IB = 85 mA, IC = 500 mA 2N3498L, 2N3499L IB = 50 mA, IC = 300 mA 2N3500L, 2N3501L Collector to Emitter Voltage VCE (Volts) Maximum Safe Operating Area T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 4 of 8 JANS 2N3498L thru JANS 2N3501L ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) POST RADIATION ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage IC = 10 mA Collector-Base Cutoff Current VCB = 100 V VCB = 150 V VCB = 50 V VCB = 75 V Collector to Emitter Cutoff VCE = 80 V VCE = 120 V Symbol Min. 2N3498L, 2N3499L 2N3500L, 2N3501L V(BR)CEO 100 150 2N3498L, 2N3499L 2N3500L, 2N3501L 2N3498L, 2N3499L 2N3500L, 2N3501L ICBO 20 20 100 100 µA µA nA nA 2N3498L, 2N3499L 2N3500L, 2N3501L ICEO 2 µA IEBO 50 20 nA µA Emitter-Base Cutoff Current VEB = 4.0 V VEB = 6.0 V Forward-Current Transfer Ratio IC = 0.1 mA, VCE = 10 V 2N3498L, 2N3500L 2N3499L, 2N3501L [hFE] 2N3498L, 2N3500L 2N3499L, 2N3501L [12.5] [25] IC = 10 mA, VCE = 10 V 2N3498L, 2N3500L 2N3499L, 2N3501L [17.5] [37.5] IC = 150 mA, VCE = 10 V 2N3498L, 2N3500L 2N3499L, 2N3501L [20] [50] IC = 300 mA, VCE = 10 V 2N3500L 2N3501L [7.5] [10] IC = 500 mA, VCE = 10 V 2N3498L 2N3499L [7.5] [10] T4-LDS-0056-1, Rev. 1 (121220) Unit V [10] [17.5] IC = 1.0 mA, VCE = 10 V Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 300 mA, IB = 30 mA IC = 150 mA, IB = 15 mA Base-Emitter Saturation Voltage IB = 10 mA, IB = 1.0 mA IB = 300 mA, IB = 30 mA IB = 150 mA, IB = 15 mA Max. 120 300 All Types 2N3498L, 3N3499L 2N3500L, 2N3501L VCE(sat) 0.23 0.69 0.46 V All Types 2N3498L, 3N3499L 2N3500L, 2N3501L VBE(sat) 0.92 1.61 1.38 V ©2012 Microsemi Corporation Page 5 of 8 JANS 2N3498L thru JANS 2N3501L DC Operation Maximum Rating (W) GRAPHS TA (°C) (Ambient) DC Operation Maximum Rating (W) FIGURE 1 Derating for all devices (RӨJA) TC (°C) (Case) FIGURE 2 Derating for all devices (RӨJC) T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 6 of 8 JANS 2N3498L thru JANS 2N3501L o Theta ( C/W) GRAPHS (continued) Time (s) o Theta ( C/W) FIGURE 3 Thermal Impedance Graph (RӨJA) Time (s) FIGURE 4 Thermal Impedance Graph (RӨJC) T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 7 of 8 JANS 2N3498L thru JANS 2N3501L PACKAGE DIMENSIONS Symbol Dimensions Inches Millimeters Min Max Min Max CD 0.305 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD 0.335 0.370 8.51 9.40 LC 0.200 TP 5.08 TP Note 6 LD LL 0.016 1.500 0.021 1.750 0.41 38.10 0.53 44.50 7 7, 12 LU 0.016 0.019 0.41 0.48 7, 12 1.27 12 L1 0.050 L2 0.250 6.35 12 P 0.100 2.54 5 Q 1.27 4 TL 0.029 0.050 0.045 0.74 1.14 3 TW 0.028 0.034 0.71 0.86 10, 11 0.25 11 r α 0.010 45° TP 45° TP 6 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Dimension are in inches. Millimeters are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall not exceed .042 inch (1.07 mm) within L1 and beyond LL minimum. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector. Lead number three is electrically connected to case. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). Symbol r applied to both inside corners of tab. All three leads. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 8 of 8