JANS 2N5152L and JANS 2N5154L Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N5152 and 2N5154. • JANS RHA qualifications are available per MIL-PRF-19500/544. TO-5 Package Also available in: TO-39 Package APPLICATIONS / BENEFITS • • • • (leaded) JANS_2N5152 & JANS_2N5154 High frequency operation. Lightweight. High-speed power-switching applications. High-reliability applications. U3 Package (surface mount) JANS_2N5152U3 & JANS_2N5154U3 MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case (1) Reverse Pulse Energy Collector Current (dc) Collector to base voltage (static), emitter open Collector to emitter voltage (static) base open Emitter to base voltage (static) collector open Steady-State Power Dissipation @ TA = +25 ºC Steady-State Power Dissipation @ TC = +25 ºC Symbol Value Unit TJ and TSTG RӨJA RӨJC -65 to +200 175 10 15 2 100 80 5.5 1 10 ºC ºC/W ºC/W mJ A V V V W W IC VCBO VCEO VEBO PD PD Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0100-1, Rev. 1 (120716) ©2012 Microsemi Corporation Page 1 of 8 JANS 2N5152L and JANS 2N5154L MECHANICAL and PACKAGING • • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). MARKING: Part number, date code, manufacturer’s ID. POLARITY: NPN (see package outline). WEIGHT: Approximately 1.14 grams. See Package Dimensions on last page. PART NOMENCLATURE JANSM 2N5152 L Reliability Level JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) JANSF – 300K Rads (Si) Symbol Cobo ICEO ICEX IEBO hFE VCEO VCBO VEBO Long-Leaded Package JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance Collector cutoff current, base open Collector cutoff current, circuit between base and emitter Emitter cutoff current, collector open Common-emitter static forward current transfer ratio Collector-emitter voltage, base open Collector-emitter voltage, emitter open Emitter-base voltage, collector open T4-LDS-0100-1, Rev. 1 (120716) ©2012 Microsemi Corporation Page 2 of 8 JANS 2N5152L and JANS 2N5154L ELECTRICAL CHARACTERISTICS @ TA = +25 ºC unless otherwise noted. OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0 Emitter-Base Cutoff Current VEB = 4.0 V, IC = 0 VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 Collector-Emitter Cutoff Current VCE = 40 V, IB = 0 Symbol Min. V(BR)CEO 80 Max. Unit V IEBO 1.0 1.0 µA mA ICES 1.0 1.0 µA mA ICEO 50 µA Min. Max. Unit 20 50 30 70 20 40 --90 200 --- ON CHARACTERISTICS Parameters / Test Conditions Forward-Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.5 A, VCE = 5 V IC = 5A, VCE = 5V Symbol 2N5152L 2N5154L 2N5152L 2N5154L 2N5152L 2N5154L Collector-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA IC = 5.0 A, IB = 500 mA Base-Emitter Voltage Non-Saturation IC = 2.5 A, VCE = 5 V Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA IC = 5.0 A, IB = 500 mA hFE VCE(sat) 0.75 1.5 V VBE 1.45 V VBE(sat) 1.45 2.2 V Max. Unit 250 pF DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio 2N5152L 2N5154L IC = 500 mA, VCE = 5 V, f = 10 MHz Small-signal short Circuit Forward-Current Transfer Ratio 2N5152L 2N5154L IC = 100 mA, VCE = 5 V, f = 1 KHz Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz T4-LDS-0100-1, Rev. 1 (120716) Symbol Min. |hfe| 6 7 hfe 20 50 Cobo ©2012 Microsemi Corporation Page 3 of 8 JANS 2N5152L and JANS 2N5154L ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time IC = 5 A, IB1 = 500 mA Turn-Off Time RL = 6Ω Storage Time IB2 = -500 mA Fall Time Symbol Max. Unit ton 0.5 µs toff 1.5 µs tS 1.4 µs tf 0.5 µs VBE(OFF) = 3.7 V Min. SAFE OPERATING AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests TC = +25 °C, tP = 1.0 s, 1 Cycle Test 1 VCE = 5.0 V, IC = 2.0 A Test 2 VCE = 32 V, IC = 310 mA Test 3 VCE = 80 V, IC = 12.5 mA IC – COLLECTOR CURRENT - A dc Operation TC < 25 ºC VCE – COLLECTOR – EMITTER VOLTAGE – V Maximum Safe Operating Area T4-LDS-0100-1, Rev. 1 (120716) ©2012 Microsemi Corporation Page 4 of 8 JANS 2N5152L and JANS 2N5154L ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) POST RADIATION ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Symbol Collector to Emitter Cutoff Current VCE = 40 V Emitter to Base Cutoff Current VEB = 4 V Breakdown Voltage, Collector to Emitter IC = 100 mA Collector to Emitter Cutoff Current VCE = 60 V Emitter to Base Cutoff Current VEB = 5.5 V Forward-Current Transfer Ratio IC = 50 mA, VCE = 5 V Max. Unit ICEO 100 µA IEBO 2.0 µA V(BR)CEO Min. 80 V ICES 2.0 µA IEBO 2.0 mA (1) IC = 2.5 A, VCE = 5 V [10] 2N5154L [25] 2N5152L IC = 5 A pulsed, VCE = 5 V Base to Emitter voltage (non-saturated) VCE = 5 V, IC = 2.5 A, pulsed Collector-Emitter Saturation Voltage IC = 2.5 mA, IB = 250 mA, pulsed IC = 500 mA, IB = 500 mA, pulsed Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed 2N5152L [15] 90 2N5154L [35] 200 2N5152L [10] 2N5154L [20] [hFE] VBE 1.45 V VCE(sat) 0.86 1.73 V VBE(sat) 1.67 2.53 V (1) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the preand post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. T4-LDS-0100-1, Rev. 1 (120716) ©2012 Microsemi Corporation Page 5 of 8 JANS 2N5152L and JANS 2N5154L DC Operation Maximum Rating (W) GRAPHS TC (°C) (Case) DC Operation Maximum Rating (W) FIGURE 1 Temperature-Power Derating Curve TA (°C) (Ambient) FIGURE 2 Temperature-Power Derating Curve T4-LDS-0100-1, Rev. 1 (120716) ©2012 Microsemi Corporation Page 6 of 8 JANS 2N5152L and JANS 2N5154L o Theta ( CW) GRAPHS (continued) Time (sec) o Theta ( CW) FIGURE 3 Thermal Impedance (RӨJA) Time (sec) FIGURE 4 Thermal Impedance (RӨJC) T4-LDS-0100-1, Rev. 1 (120716) ©2012 Microsemi Corporation Page 7 of 8 JANS 2N5152L and JANS 2N5154L PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU Dimensions Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 14 .016 .019 0.41 0.48 Inch L1 .050 1.27 L2 .250 6.35 P Q TL TW r α .100 2.54 .030 .029 .045 .028 .034 .010 45° TP Note 6 7 8,9 8,9 8,9 8,9 0.76 1.14 0.86 0.25 0.74 0.71 45° TP 7 5 3,4 3 10 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. TO-5 dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. T4-LDS-0100-1, Rev. 1 (120716) ©2012 Microsemi Corporation Page 8 of 8