TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L 2N3501 2N3501L 2N3501UB JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3498* 2N3501* 2N3499* 2N3501* Unit Collector-Emitter Voltage VCEO 100 150 Vdc Collector-Base Voltage VCBO 100 150 Vdc Emitter-Base Voltage VEBO 6.0 6.0 Vdc IC 500 300 mAdc Collector Current Total Power Dissipation @ TA = +25°C @ TC = +25°C Operating & Storage Junction Temperature Range PT 1.0 5.0 W W TJ, Tstg -65 to +200 °C TO-5* 2N3498L, 2N3499L 2N2500L, 2N3501L THERMAL CHARACTERISTICS Symbol Max. Unit Thermal Resistance, Junction-to-Case Parameters / Test Conditions RθJC 30 °C/W Thermal Resistance, Junction-to-Ambient RθJA 175 °C/W * Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices. 1. Derate linearly 5.71 W/°C for TA > 25°C 2. Derate linearly 28.6 W/°C for TC > 25°C TO-39* (TO-205AD) 2N3498, 2N3499 2N3500, 2N3501 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 100 150 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3498, 2N3499 2N3500, 2N3501 Collector-Base Cutoff Current VCB = 50Vdc 2N3498, 2N3499 VCB = 75Vdc 2N3500, 2N3501 VCB = 100Vdc 2N3498, 2N3499 VCB = 150Vdc 2N3500, 2N3501 T4-LDS-0056 Rev. 1 (080812) ICBO Vdc 50 50 10 10 ηAdc ηAdc μAdc μAdc 3 PIN 2N3501UB Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit 25 10 ηAdc μAdc OFF CHARACTERISTICS Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc IEBO ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 20 35 IC = 1.0mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 25 50 IC = 10mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 35 75 hFE IC = 150mAdc, VCE = 10Vdc 2N3498, 2N3500 2N3499, 2N3501 40 100 IC = 300mAdc, VCE = 10Vdc 2N3500 2N3501 15 20 IC = 500mAdc, VCE = 10Vdc 2N3498 2N3499 15 20 120 300 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc All Types 2N3498, 3N3499 2N3500, 2N3501 VCE(sat) 0.2 0.6 0.4 Vdc Base-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 300mAdc, IB = 30mAdc IC = 150mAdc, IB = 15mAdc All Types 2N3498, 3N3499 2N3500, 2N3501 VBE(sat) 0.8 1.4 1.2 Vdc Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude, Forward Current Transfer Ratio IC = 20mAdc, VCE = 20Vdc, f = 100MHz Symbol Min. Max. |hfe| 1.5 8.0 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Input Capacitance VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz T4-LDS-0056 Rev. 1 (080812) 2N3498, 2N3499 2N3500, 2N3501 Cobo 10 8.0 pF Cibo 80 pF Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time VEB = 5Vdc; IC = 150mAdc; IB1 = 15mAdc ton 115 ηs Turn-Off Time IC = 150mAdc; IB1 = IB2 = 15mAdc toff 1150 ηs SAFE OPERATING AREA DC Tests TC = +25°C, tr ≥ 10ηs; 1 Cycle, t = 1.0s Test 1 VCE = 10Vdc, IC = 500mAdc 2N3498, 2N3499 VCE = 16.67Vdc, IC = 300mAdc 2N3500, 2N3501 VCE = 10Vdc, IC = 113mAdc 2N3501UB Test 2 VCE = 50Vdc, IC = 100mAdc All Types VCE = 50Vdc, IC = 23mAdc 2N3501UB Test 3 VCE = 80Vdc, IC = 40mAdc All Types VCE = 80Vdc, IC = 14mAdc 2N3501UB Clamped Switching TA = +25°C Test 1 IB = 85mAdc, IC = 500mAdc 2N3498, 2N3499 IB = 50mAdc, IC = 300mAdc 2N3500, 2N3501 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0056 Rev. 1 (080812) Page 3 of 3