JANS_2N3700 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR and JANSF RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN leaded metal device is RAD hard qualified for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3700. • RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options). TO-18 (TO-206AA) Package Also available in: UB package APPLICATIONS / BENEFITS • • • • (leaded) JANS_2N3700UB Leaded TO-18 package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) JANS_2N3019, 2N3019S TO-46 (TO-206AB) (leaded) JANS_2N3057A o MAXIMUM RATINGS @ TA = +25 C unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature Thermal Impedance Junction-to-Ambient Thermal Impedance Junction-to-Case Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current o (1) Total Power Dissipation: @ TA = +25 C o (2) @ TC = +25 C Notes: Symbol Value TJ and TSTG RӨJA RӨJC VCEO VCBO VEBO IC PD -65 to +200 325 150 80 140 7.0 1.0 0.5 1.0 1. Derate linearly 2.85 mW/°C for TA ≥ +25 °C. 2. Derate linearly 10.3 mW/°C for TC ≥ +25 °C. Unit o C C/W o C/W V V V A W o MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 1 of 7 JANS_2N3700 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, nickel plated kovar base, nickel cap. TERMINALS: Gold plate over nickel kovar. MARKING: Part number, date code, manufacturer’s ID, and serial number. WEIGHT: Approximately 0.3 grams. See Package Dimensions on last page. PART NOMENCLATURE JANSM 2N3700 Reliability Level JANSM = 3K Rads (Si) JANSD = 10K Rads (Si) JANSP = 30K Rads (Si) JANSL = 50K Rads (Si) JANSR = 100K Rads (Si) JANSF = 300K Rads (Si) Symbol f IB IE TA TC VCB VCE VEB JEDEC type number SYMBOLS & DEFINITIONS Definition frequency Base current (dc) Emitter current (dc) Ambient temperature Case temperature Collector to base voltage (dc) Collector to emitter voltage (dc) Emitter to base voltage (dc) T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 2 of 7 JANS_2N3700 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 30 mA Collector-Base Cutoff Current VCB = 140 V Emitter-Base Cutoff Current VEB = 7 V Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5.0 V (1) ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 150 mA, VCE = 10 V IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1.0 A, VCE = 10 V Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 20 MHz Output Capacitance VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Symbol Min. V(BR)CEO 80 Max. Unit V ICBO 10 µA IEBO1 10 µA ICES 10 ηA IEBO2 10 ηA hFE 100 50 90 50 15 300 300 300 VCE(sat) 0.2 0.5 V VBE(sat) 1.1 V Unit Symbol Min. Max. hfe 80 400 |hfe| 5.0 20 Cobo 12 pF Cibo 60 pF (1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%. T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 3 of 7 JANS_2N3700 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests TC = 25 °C, 1 cycle, t = 10 ms VCE = 10 V IC = 180 mA Test 2 2N3700 VCE = 40 V IC = 45 mA Test 3 2N3700 VCE = 80 V IC = 22.5 mA IC – COLLECTOR CURRENT - A Test 1 2N3700 VCE – COLLECTOR – EMITTER VOLTAGE – V Maximum Safe Operating Area T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 4 of 7 JANS_2N3700 ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) POST RADIATION ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Symbol Collector to Base Cutoff Current VCB = 140 V Emitter to Base Cutoff Current VEB = 7 V Collector to Emitter Breakdown Voltage IC = 30 mA Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5.0 V (2) Forward-Current Transfer Ratio IC = 150 mA, VCE = 10 V Max. Unit ICBO 20 µA IEBO 20 µA V(BR)CEO 80 V ICES 20 ηA IEBO 20 ηA IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V Min. [hFE] [50] 300 [25] 300 [45] IC = 500 mA, VCE = 10 V [25] IC = 1 A, VCE = 10 V Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA [7.5] VCE(sat) VBE(sat) 300 0.23 0.58 1.27 V V (2) See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and postradiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 5 of 7 JANS_2N3700 Maximum DC Operation Rating (W) GRAPHS o TA ( C) Ambient Maximum DC Operation Rating (W) FIGURE 1 Temperature-Power Derating (RӨJA) Leads = .125 inch (3.175mm) o TC ( C) Case at base FIGURE 2 Temperature-Power Derating (RӨJC) T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 6 of 7 JANS_2N3700 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inch Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP 1, 2, 9, 11, 12 Note 6 7,8 7,8 7,8 7,8 7,8 5 3,4 3 10 6 NOTES: 1. 2. 3. 4. 5. 6. Dimension are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. T4-LDS-0263, Rev. 1 (120784) ©2012 Microsemi Corporation Page 7 of 7