MAD1103(e3) Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. They are available with either Tin-Lead plating terminations or as RoHS Compliant with annealed matte-Tin finish. 14 Pin Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • 14 diode array protects 8 lines Molded 14-Pin dual-in-line package • UL 94V-0 flammability classification • Low capacitance 1.5 pF per diode • Switching speeds less than 5 ns • Discrete diode elements offer optimum isolation • IEC 61000-4 compatible: Top Viewing Pin Layout 61000-4-2 (ESD): Air 15 kV, contact – 8 kV 61000-4-4 (EFT): 40 A – 5/50 ns 61000-4-5 (surge): 12 A, 8/20 µs • RoHS compliant device is available APPLICATIONS / BENEFITS • • Low capacitance steering diode protection for high frequency data lines Ideal for: RS-232 & RS-422 Interface Networks. Ethernet: 10 Base T Computer I / O Ports LAN Switching Core Drivers MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com RF01136, Rev A (10/30/13) ©2013 Microsemi Corporation Page 1 of 3 MAD1103(e3) MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Peak Working Reverse Voltage Repetitive Peak Forward Current (one diode) Forward Surge Current @ 8.3 ms @ 8/20 µs Rated Average Power dissipation (total) Solder Temperature @ 10 s Symbol Value Unit TJ and TSTG V RWM I FRM I FSM -55 to +150 75 400 2 12 ºC/W V mA A P M(AV) TSP 1500 260 mW ºC MECHANICAL and PACKAGING • • • • • • CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating solderable per MIL-STD-750 method 2026 MARKING: MSC logo, MAD1103 or MAD1103e3 and date code. Pin #1 is to the left of the dot or indent on top of package. DELIVERY OPTION: Carrier tube. Consult factory for quantities WEIGHT: Approximately 0.997 grams See Package Dimensions on last page. PART NOMENCLATURE MAD 1103 (e3) Thru-Hole Mount Package RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Series Number SYMBOLS & DEFINITIONS Definition Symbol CT IR V (BR) VF V RWM Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R. Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated PART NUMBER MAD1103 MAD1103e3 BREAKDOWN VOLTAGE V (BR) @ I (BR) =100 µA LEAKAGE CURRENT IR T A = 25 °C LEAKAGE CURRENT IR T A = 150 °C CAPACITANCE C @0V REVERSE RECOVERY TIME t rr FORWARD VOLTAGE VF I F = 10 mA FORWARD VOLTAGE VF I F = 100 mA V µA µA pF ns V V MIN MAX @V R MAX @V R TYP MAX MAX MAX 90 0.200 20 300 20 1.5 5.0 1.00 1.20 RF01136, Rev A (10/30/13) ©2013 Microsemi Corporation Page 2 of 3 MAD1103(e3) PACKAGE DIMENSIONS Ref. A B C D E F G H J L M Dimensions Inch Millimeters Min Max Min Max 0.746 0.754 18.95 19.15 0.246 0.254 6.248 6.452 0.126 0.134 3.200 3.404 0.300 0.325 7.619 8.255 0.320 0.370 8.128 9.398 0.102 0.098 2.489 2.591 0.016 0.020 0.406 0.508 0.015 0.040 0.381 1.016 0.058 0.062 1.473 1.575 0.121 0.129 3.073 3.277 0.25 REF 0.635 REF CIRCUIT Supply rail (+V CC) I/O Port GND (or -VCC) STEERING DIODE APPLICATION CONFIGURATION RF01136, Rev A (10/30/13) ©2013 Microsemi Corporation Page 3 of 3