Document No. 002-11402 Rev. ** ECN #5153831 Cypress Semiconductor Automotive Product Qualification Report QTP# 154103 VERSION ** February, 2016 Evans 4M nvSRAM Product Family S8TNV1-5, Fab 4 CY14B104NABA45XE 256K x 16 Automotive nvSRAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Becky Thomas Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No. 002-11402 Rev. ** ECN #5153831 PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 154103 New Automotive Product Qualification of Evans 4M nvSRAM, using S8TNV1-5 Process Technology Feb 2016 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No. 002-11402 Rev. ** ECN #5153831 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: New Automotive Product Qualification of Evans 4M nvSRAM, using S8TNV1-5 Process Technology Automotive Marketing Part #: CY14B104NA-BA45XE Device Description: 4M (256K x 16) Automotive nvSRAM Cypress Division: MPD TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 3 Metal Composition: Passivation Type and Thickness: Metal 1: 300Å TiW / 3,200Å Al / 100Å Ti Metal 2: 300Å TiW / 3,200Å Al / 100Å Ti Metal 3: 300Å TiW / 8,000Å Al / 150Å Ti Si2N3 9000Å & SiO2 700Å Generic Process Technology/Design Rule (-drawn): S8TNV1-5/0.13μm Gate Oxide Material/Thickness (MOS): 32Å (LV) & 110Å (HV) Name/Location of Die Fab (prime) Facility: Cypress Semiconductor -- Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4 / S8TNV1-5 PACKAGE AVAILABILITY PACKAGE 48 FBGA ASSEMBLY FACILITY SITE ASE-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No. 002-11402 Rev. ** ECN #5153831 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: BK48C Mold Compound Flammability Rating: 48 FBGA KE G2270 / KYOCERA V-0 Mold Compound Alpha Emission Rate: 0.001C/CM2-H Oxygen Rating Index: >28% 52% Substrate Material: BT Resin / UMTC Lead Finish, Composition / Thickness: SnAgCu 0.3 Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Henkel Die Attach Material: 2025D Bond Diagram Designation 001-97797 Wire Bond Method: Thermosonic Wire Material/Size: 1.0 mil Au Thermal Resistance Theta JA C/W: 46.09 C/W Package Cross Section Yes/No: No Assembly Process Flow: 49-41040 Name/Location of Assembly (prime) facility: ASE-G MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Sort Test: CMI, USA / Class Test and Finish: CML, Philippines Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No. 002-11402 Rev. ** ECN #5153831 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESDCDM) Latchup Sensitivity NVM Endurance /Data Retention (Plastic) Test Condition (Temp/Bias) Result P/F AEC-Q100-002, 500V, 1,000V, 2,000V P AEC-Q100-011, 250V, 500V, 750V (corner pins) P P P High Temperature Operating Life Early Failure Rate AEC-Q100-004, +/- 140mA at 125C, 5.4V AEC-Q100-005, Endurance at 25C with Retention at 25C and Endurance at 125C with Retention at 150 C, nonbiased AEC-Q100-005 and JESD22-A108, Endurance at 125C with Life Test at 150 C, Dynamic Operating Condition, Vcc = 3.60V AEC-Q100-008 and JESD22-A108, 150 C Dynamic Operating Condition, Vcc = 3.60V High Temperature Operating Life Latent Failure Rate JESD22-A108, 150 C Dynamic Operating Condition, Vcc = 3.60V P High Accelerated Saturation Test (HAST) JESD22-A110,130 C, 85%RH, nnV Precondition: JESD22-A113 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH) JESD22- A104, -65 C to 150 C Precondition: JESD22-A113 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH) Mil-Std 883, Method 2011 P P Wire Bond Shear JESD22-A102, 121 C, 100%RH, 15 PSIG Precondition: JESD22-A113 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH) AEC Q100-001 Wire Bond Pull Mil-Std 883, Method 2011 P Solderability JESD22-B102 P Physical Dimensions JESD22B100 and B108 P Solder Ball Shear AEC Q100-010 P Electrical Distributions AEC Q100-009 P NVM Endurance / High Temperature Operating Life Temperature Cycle Post Temperature Cycle Wire Bond Pull Pressure Cooker Test Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 P P P P P Document No. 002-11402 Rev. ** ECN #5153831 RELIABILITY FAILURE RATE SUMMARY Stress/Test Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 High Temperature Operating Life Early Failure Rate 10,340 Devices Tested / 496,320 Device Hours 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 10,819 Devices Tested/ 680,232 Device Hours 0 0.7 170 8 FIT 1 2 3 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T 2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No. 002-11402 Rev. ** ECN #5153831 Reliability Test Data QTP #: 154103 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej 500V 3 0 1000V 3 0 2000V 3 0 3 0 3 0 Failure Mechanism STRESS: Electrostatic Discharge- Human Body Model (ESD-HBM): 500V CY14B104NA-BA45XE 4520595 611530604 ASE-G STRESS: Electrostatic Discharge- Human Body Model (ESD-HBM): 1,000V CY14B104NA-BA45XE 4520595 611530604 ASE-G STRESS: Electrostatic Discharge- Human Body Model (ESD-HBM): 2,000V CY14B104NA-BA45XE 4520595 611530604 ASE-G STRESS: Electrostatic Discharge- Charge Device Model (ESD-CDM): 48 BGA- 250V CY14B104NA-BA45XE 4520595 611530604 ASE-G 250V STRESS: Electrostatic Discharge- Charge Device Model (ESD-CDM): 48 BGA- 500V CY14B104NA-BA45XE 4520595 611530604 ASE-G 500V STRESS: Electrostatic Discharge- Charge Device Model (ESD-CDM): 48 BGA- 750V (corner pins) CY14B104NA-BA45XE 4520595 611530604 ASE-G 750V 3 0 COMP 6 0 80 80 80 0 0 0 80 80 80 0 0 0 STRESS: Static Latch up, ±140mA 125C, and Overvoltage Test at 5.4V CY14B104NA-BA45XE 4520595 611530604 ASE-G STRESS: 125C Endurance Test (1.4 Million Cycles) + 150C, 1000 hour Data Retention CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G 1000 1000 1000 STRESS: 25C Endurance Test (1.4 Million Cycles) + 25C, 1000 hour Data Retention CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G 1000 1000 1000 STRESS: 125C Endurance Test (1.4 Million Cycles) + High Temperature Operating Life, 150C, 3.6V, 408 Hrs CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G 408 408 408 79 80 80 0 0 0 3446 3446 3448 0 0 0 80 80 80 0 0 0 STRESS: High Temperature Operating Life- Early Failure Rate, 150C, 3.6V, 48 Hrs CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G 48 48 48 STRESS: High Temperature Operating Life- Latent Failure Rate, 150C, 3.6V, 408 Hrs CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G 408 408 408 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 Document No. 002-11402 Rev. ** ECN #5153831 Reliability Test Data QTP #: 154103 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: Highly Accelerated Saturation Test (HAST), 130C, 85%RH, 3.6V (MSL 3 Preconditioning) CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G 96 96 96 80 80 80 0 0 0 STRESS: Temperature Cycling Test (TCT), Condition C, -65 C to 150 C (MSL 3 Preconditioning) CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4520595 611530604 611530604 ASE-G ASE-G 500 1000 80 80 0 0 CY14B104NA-BA45XE CY14B104NA-BA45XE 4504243 4504243 611530606 611530606 ASE-G ASE-G 96 1000 80 80 0 0 CY14B104NA-BA45XE CY14B104NA-BA45XE 4519953 4519953 611530603 611530603 ASE-G ASE-G 96 1000 80 80 0 0 ASE-G 500 5 0 STRESS: Post Temperature Cycling Test (TCT) Bond Pull CY14B104NA-BA45XE 4520595 611530604 STRESS: Pressure Cooker Test (PCT), 121 C, 100%RH, 15 PSIG (MSL 3 Preconditioning) CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4520595 611530604 611530604 ASE-G ASE-G 96 168 80 80 0 0 CY14B104NA-BA45XE CY14B104NA-BA45XE 4504243 4504243 611530606 611530606 ASE-G ASE-G 96 168 80 80 0 0 CY14B104NA-BA45XE CY14B104NA-BA45XE 4519953 4519953 611530603 611530603 ASE-G ASE-G 96 168 80 80 0 0 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G COMP COMP COMP 150 150 150 0 0 0 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G COMP COMP COMP 150 150 150 0 0 0 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G COMP COMP COMP 15 15 15 0 0 0 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G COMP COMP COMP 30 30 30 0 0 0 611530604 611530606 611530603 ASE-G ASE-G ASE-G COMP COMP COMP 15 15 15 0 0 0 STRESS: Wire Bond Shear CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE STRESS: Wire Bond Pull CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE STRESS: Solderability CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE STRESS: Physical Dimensions CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE STRESS: BGA Solder Ball Shear CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No. 002-11402 Rev. ** ECN #5153831 Reliability Test Data QTP #: 154103 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej 30 30 30 0 0 0 Failure Mechanism STRESS: Electrical Distributions CY14B104NA-BA45XE CY14B104NA-BA45XE CY14B104NA-BA45XE 4520595 4504243 4519953 611530604 611530606 611530603 ASE-G ASE-G ASE-G COMP COMP COMP Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No. 002-11402 Rev. ** ECN #: 5153831 Document History Page Document Title: Process Technology Document Number: QTP# 154103: New Automotive Product Qualification of Evans 4M nvSRAM, using S8TNV1-5 002-11402 Rev. ECN Orig. of No. Change ** 5153831 BECK Description of Change Initial Release Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10