Document No.001-88009 Rev. *A ECN # 4417916 Cypress Semiconductor Product Qualification Report QTP# 065201 VERSION *A June 2014 FX2LP18 DEVICE FAMILY C8Q-3R TECHNOLOGY, FAB 5 CY7C68053 MoBL-USB™ FX2LP18 USB Micro controller FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Lorena R. Zapanta (ILZ) Reliability Engineer Reviewed By: Zhaomin Ji (ZIJ) Reliability Manager Approved By: Richard Oshiro(RGO) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 1 Document No.001-88009 Rev. *A ECN # 4417916 PRODUCT QUALIFICATION HISTORY QUAL REPORT 065201 DESCRIPTION OF QUALIFICATION PURPOSE Qualify FX2LP18 Device Family on C8Q-3R Technology at GSMC Foundry (Fab 5) DATE COMP. Sep 07 Cypress products are manufactured using qualified processes. The technology qualification for this product is referenced above and must be considered to get a complete and thorough evaluation of the reliability of the product. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 2 Document No.001-88009 Rev. *A ECN # 4417916 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify FX2LP18 Device Family on C8Q-3R Technology at GSMC Foundry (Fab 5) Marketing Part #: CY7C68053-56BAXC Device Description: FX2LP18 USB 2.0 MoBL Cypress Semiconductor Corporation – Consumer and Computation Division TM Cypress Division: TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: Metal 2: Metal 3: Metal 4: 400Å TiN / 2,900Å Al 0.5% Cu / 600Å TiN 550Å TiN / 3,600Å Al 0.5% Cu / 600Å TiN 550Å TiN / 3,600Å Al 0.5% Cu / 600Å TiN 500Å TiN / 6,500Å Al 0.5% Cu / 250 Å TiN Passivation Type and Materials: 1000Å TeOs / 9000Å Si3N4 Generic Process Technology/Design Rule (µ-drawn): 0.13µ Gate Oxide Material/Thickness (MOS): 32A-STD 55A HV Name/Location of Die Fab (prime) Facility: GSMC China Die Fab Line ID/Wafer Process ID: C8Q-3R, Fab 5 PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 56-Ball VFBGA CML-RA, Taiwan-G 56-Pin SSOP CML-RA, Taiwan-T, China-JT Note: Package Qualification details available upon request. 3 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No.001-88009 Rev. *A ECN # 4417916 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BZ56 56-Ball Very Fine Ball Grid Array (VFBGA) KE-G2270/ Kyocera UL-94 V-0 Oxygen Rating Index: N/A Substrate Material: BT Resin Lead Finish, Composition / Thickness: N/A Die Backside Preparation Method/Metallization: Die Separation Method: Grinding Die Attach Supplier: Ablestik Die Attach Material: 2025D Die Attach Method: Epoxy Bond Diagram Designation: 001-10741 Wire Bond Method: Thermosonic Wire Material/Size: Au/1.0mil Thermal Resistance Theta JA °C/W: 45 °C/W, 19 °C/W Package Cross Section Yes/No: No Assembly Process Flow: 001-06964 Name/Location of Assembly (prime) facility: Taiwan-G MSL Level 3 Reflow Profile 260C Sawing ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA,KYEC, Taiwan 4 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No.001-88009 Rev. *A ECN # 4417916 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP56 56- Shrunk Small Outline Package (SSOP) MP8500/Nitto UL-94 V-0 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Die Separation Method: Backgrind Die Attach Supplier: Dexter Hysol Die Attach Material: QMI509 Die Attach Method: Dispensing Wire Bond Method: Thermosonic Wire Material/Size: Au/1.0mil Thermal Resistance Theta JA °C/W: 58°C/W, 27°C/W Package Cross Section Yes/No: No Name/Location of Assembly (prime) facility: CML-R MSL Level 3 Reflow Profile 260C 100% Saw ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, KYEC,Taiwan Note: Please contact a Cypress Representative for other packages availability. 5 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 5 of 10 Document No.001-88009 Rev. *A ECN # 4417916 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Te st Electrostatic Discharge Human Body Model Test Condition (Temp/Bias 2200V JESD22, Method A114-E Electrostatic Discharge Charge Device Model Result P/F P P High Accelerated Saturation Test (HAST) 130°C, 3.65V, 85%RH High Temperature Operating Life Dynamic Operating Condition, Vcc=3.8V, 150°C P Dynamic Operating Condition, Vcc=3.8V, 150°C P High Temperature Steady State life Static Operating Condition, Vcc= 3.63V, 150°C P High Temperature Storage P Low Temperature Operating Life 150C, No bias Dynamic Operating Condition, Vcc=4.3V, -30°C Pressure Cooker 121°C, 100%RH, 15 Psig P P Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Early Failure Rate High Temperature Operating Life Latent Failure Rate P Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Static Latchup 125C, ± 200mA, In accordance with JESD78 P Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Acoustic Microscopy J-STD-020 P 6 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No.001-88009 Rev. *A ECN # 4417916 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 1,026 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 272,000 DHRs 0 0 .7 170 20 FIT 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 7 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 10 Document No.001-88009 Rev. *A ECN # 4417916 Reliability Test Data QTP #: Fab Lot # 065201 Assy Lot # Assy Loc Duration CY7C68053 (7C680510BK) 9714792 610721014 TAIWN-G CY7C68053 (7C680510BK) 4720785 610729797 CY7C68053 (7C680510BK) 610739937 Device STRESS: STRESS: Samp Rej COMP 15 0 TAIWN-G COMP 15 0 TAIWN-G COMP 15 0 ACOUSTIC-MSL3 4727325 ESD-CHARGE DEVICE MODEL (500V) CY7C68053 (7C680510BK) 9714792 610721014 TAIWN-G COMP 9 0 CY7C68053 (7C680510BK) 4720785 610729797 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, 2200V CY7C68053 (7C680510BK) 9714792 610721014 TAIWN-G COMP 8 0 CY7C68053 (7C680510BK) 4720785 610729797 TAIWN-G COMP 8 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY7C68053 (7C680510BK) 9714792 610721250 CML-R 80 80 0 CY7C68053 (7C680510BK) 9714792 610721250 CML-R 168 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V, Vcc Max) CY7C68053 (7C680510BK) 9714792 610721250 CML-R 48 338 0 CY7C68053 (7C680510BK) 4720785 610731288 CML-R 48 348 0 CY7C68053 (7C680510BK) 4727325 610739215 CML-R 48 340 0 STRESS: Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V, Vcc Max) CY7C68053 (7C680510BK) 9714792 610721250 CML-R 80 182 0 CY7C68053 (7C680510BK) 9714792 610721250 CML-R 500 182 0 CY7C68053 (7C680510BK) 4720785 610731288 CML-R 80 182 0 CY7C68053 (7C680510BK) 4720785 610731288 CML-R 500 182 0 CY7C68053 (7C680510BK) 4727325 610739215 CML-R 80 180 0 CY7C68053 (7C680510BK) 4727325 610739215 CML-R 500 180 0 8 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No.001-88009 Rev. *A ECN # 4417916 Reliability Test Data QTP #: 065201 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej HI-ACCEL SATURATION TEST (130C, 85%RH, 3.65V), PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68053 (7C680510BK) 9714792 610721250 CML-R 128 50 0 CY7C68053 (7C680510BK) 4720785 610731288 CML-R 128 45 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY7C68053 (7C680510BK) 9714792 STRESS: Failure Mechanism 610721250 CML-R STATIC LATCH-UP TESTING (125C, ±200mA) CY7C68053 (7C680510BK) 9714792 610721014 TAIWN-G COMP 3 0 CY7C68053 (7C680510BK) 4720785 610729797 TAIWN-G COMP 6 0 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY7C68053 (7C680510BK) 9714792 610721250 CML-R 500 50 0 CY7C68053 (7C680510BK) 9714792 610721250 CML-R 1000 50 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68053 (7C680510BK) 9714792 610721014 TAIWN-G 168 48 0 CY7C68053 (7C680510BK) 4720785 610729797 TAIWN-G 168 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY7C68053 (7C680510BK) 9714792 610721014 TAIWN-G 300 50 0 CY7C68053 (7C680510BK) 9714792 610721014 TAIWN-G 1000 50 0 CY7C68053 (7C680510BK) 4720785 610729797 TAIWN-G 500 50 0 CY7C68053 (7C680510BK) 4720785 610729797 TAIWN-G 1000 50 0 CY7C68053 (7C680510BK) 4727325 610739937 TAIWN-G 300 50 0 9 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No.001-88009 Rev. *A ECN # 4417916 Document History Page Document Title: Document Number: QTP # 065201 : FX2LP18 DEVICE FAMILY (CY7C68053) C8Q-3R TECHNOLOGY, FAB 5 001-88009 Rev. ECN Orig. of No. Change ** 4033621 ILZ *A 4417916 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-246 is not in spec format. Initiated spec for QTP 065201 and all data from Memo HGA-246 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Sunset Spec Review Updated front page to reflect new qualification report template per Spec 001-57716 Distribution: WEB Posting: None 10 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10