Document No. 001-70136 Rev *A ECN # 4041820 Cypress Semiconductor Automotive Product Qualification Report QTP# 074606 June 2013 Automotive PSoC Device Family S4AD-5, Fab4 CY8C21334 CY8C21534 PSoC Mixed Signal Array Automotive E & A-Grade CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Rene Rodgers Reliability Engineer, MTS (408) 943-2732 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-70136 Rev *A ECN # 4041820 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 054603 PSoC Device Family on Automotive Technology S4AD-5, Fab4 Oct 06 074606 Qualify Automotive PSoC Neutron Device (CY8C21x34), S4AD-5 Technology, Fab 4 Apr 08 082003 Qualify new MM2 mask on Automotive Neutron (8A21001AC), S4AD-5 Technology, Fab4 Oct 08 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-70136 Rev *A ECN # 4041820 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Marketing Part #: Qualify Automotive PSoC Neutron Device (CY8C21x34), S4AD-5 Technology, Fab 4 CY8C21534, CY8C21334 Device Description: 5V Automotive 12MHz Programmable System on Chip available in 20/28 SSOP Cypress Division: Programmable System Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION – S4AD-5 Number of Metal Layers: 2 Metal Metal 1: 500Å Ti /6000Å Al 0.5% Cu/ 1200Å TiW Composition: Metal 2: 500Å Ti /8000Å Al 0.5% Cu/ 300Å TiW Passivation Type and Materials: 3000A TeOs / 6,000A Si3N4 Generic Process Technology/Design Rule ( -drawn): Single Poly, Double Metal, 0.35 um Gate Oxide Material/Thickness (MOS): SiO2, 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4, S4AD-5 CMI, Sonos PACKAGE AVAILABILITY PACKAGE 28-Lead SSOP ASSEMBLY FACILITY SITE PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 12 Document No. 001-70136 Rev *A ECN # 4041820 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: 28-Lead SSOP Mold Compound Name/Manufacturer: Sumitomo EME-G600 Mold Compound Flammability Rating: V-O per UL94 Mold Compound Alpha Emission Rate: N/A Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 39°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001−09888 Name/Location of Assembly (prime) facility: Amkor Philippines (M) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 12 Document No. 001-70136 Rev *A ECN # 4041820 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F AEC-Q100-008 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125°C AEC-Q100-005 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125°C P High Accelerated Saturation Test (HAST) JESD22-A110, 130C, 5.25V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Temperature Cycle JESD22-A104, -65°C to 150°C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 P High Temperature Operating Life Early Failure Rate NVM Endurance /High Temperature Operating Life Latent Failure Rate P Pressure Cooker 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C JESD22-A102, 121C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P High Temperature Storage JESD22-A103, 150 ± 5°C no bias P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-003 200V/500V P Electrostatic Discharge 200V/300V, JESD22-A115-A P Acoustic Microscopy JEDEC JSTD-020 P Lead Integrity JESD22-B105 P Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Cross Section MIL-STD-883, Method 2018 P Electrical Distribution AEC-Q100-009 P NVM Endurance/Data Retention AEC-Q100-005, 150C P External Visual MIL-PRF-38535, MILSTD-883, METHOD 2009, P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Static Latch-up AEC-Q100-004, 125C, 7.88V, ± 100mA P Machine Model (ESD-MM) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-70136 Rev *A ECN # 4041820 RELIABILITY FAILURE RATE SUMMARY Stress/Test NVM Endurance / High Temperature Operating Life Early Failure Rate 1,2 High Temperature Operating Life Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 10,368 Devices 0 N/A N/A 0 PPM 0 0.7 55 33 FIT 500,712 HRs 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 12 Document No. 001-70136 Rev *A ECN # 4041820 Reliability Test Data QTP #: Device 054603 Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 5 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 5 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 5 0 Failure Mechanism STRESS: ACOUSTIC, MSL3 STRESS: LEAD INTEGRITY STRESS: BALL SHEAR CY8C29466 (8C29466A) STRESS: BOND PULL CY8C29466 (8C29466A) STRESS: CROSS SECTION CY8C29466 (8C29466A) STRESS: NVM ENDURANCE / DATA RETENTION TEST CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1008 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1008 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1008 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 1396 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 1299 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 1314 0 STRESS: EXTERNAL VISUAL STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 48 815 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 84 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 12 Document No. 001-70136 Rev *A ECN # 4041820 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 054603 Assy Loc Duration Samp Rej Failure Mechanism STRESS: NVM ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1032 82 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1032 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1032 80 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 200V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 5.79V, +/100mA CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 6 0 STRESS: ELECTRICAL DISTRIBUTION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 30 0 STRESS: PHYSICAL DIMENSION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 10 0 PHIL-M 1000 80 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY8C29466 (8C29466A) 4547386 610608768 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-70136 Rev *A ECN # 4041820 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 054603 Assy Loc Duration Samp Rej Failure Mechanism STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 96 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 168 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 168 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 76 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 168 76 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 128 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 128 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 128 78 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 75 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 STRESS: SOLDERABILITY STRESS: WETTING BALANCE CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 3 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-70136 Rev *A ECN # 4041820 Reliability Test Data Device Fab Lot # QTP #: 074606 Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ELECTRICAL DISTRIBUTION CY8C21534 (8A21534A) 4718135 610766718 PHIL-M COMP 30 0 CY8C21534 (8A21534A) 4740198 610801109 PHIL-M COMP 30 0 CY8C21534 (8A21534A) 4744769 610801110 PHIL-M COMP 30 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C21534 (8A21534A) 4718135 610766718 PHIL-M 48 3841 0 CY8C21534 (8A21534A) 4740198 610801109 PHIL-M 48 3592 0 CY8C21534 (8A21534A) 4744769 610801110 PHIL-M 48 4228 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8C21534 (8A21534A) 4718135 610766718 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C21534 (8A21534A) 4718135 610766718 STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 500V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1,000V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1,500V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 2,000V CY8C21534 (8A21534A) 4718135 610766718 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 7.88V, +/100mA CY8C21534 (8A21534A) 4718135 610766718 PHIL-M COMP 6 0 611059671 PHIL-M COMP 3 0 611059671 PHIL-M COMP 3 0 STRESS: ESD-MACHINE MODEL 200V CY8C21534 (8A21534A) 4026891 STRESS: ESD-MACHINE MODEL 300V CY8C21534 (8A21534A) 4026891 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 10 of 12 Document No. 001-70136 Rev *A ECN # 4041820 Reliability Test Data Device QTP #: 082003 Assy Lot # Assy Loc Duration 610835849 PHIL-M COMP 4822571 N/A N/A COMPARABLE 4822571 N/A N/A COMPARABLE 610835849 PHIL-M 1008 92 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 6 0 COMP 6 0 Fab Lot # Samp Rej Failure Mechanism STRESS: E-TEST DISTRIBUTION CY8C21534 (8A21534A) 4822571 30 0 STRESS: E-TEST YIELD CY8C21534 (8A21534A) STRESS: SORT YIELD CY8C21534 (8A21534A) STRESS: ENDURANCE CY8C21534 (8A21534A) 4822571 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8C21534 (8A21534A) 4822571 610835849 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C21534 (8A21534A) 4822571 610835849 STRESS: ESD-CHARGE DEVICE MODEL, 750V CY8C21534 (8A21534A) 4822571 610835849 STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 500V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 1500V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 2000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 4000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER AEC-Q100-002, 6000V CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 7.88V, +/200mA CY8C21534 (8A21534A) 4822571 610835849 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 8.66V, +/240mA CY8C21534 (8A21534A) 4822571 610835849 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-70136 Rev *A ECN # 4041820 Document History Page Document Title: S4AD-5, FAB4 Document Number: QTP#074606: AUTOMOTIVE PSOC NEUTRON CY8C21334/CY8C21534 DEVICE FAMILY 001-70136 Rev. ECN Orig. of No. Change ** 3281052 NSR *A 4041820 NSR Description of Change New Spec release. Change to version 3.0 - Added ESD MM data to QTP#074606 Reliability data(Reference memo RONI-23) Removed VERSION 3.0 in the title page. Changed Cypress Division from CCD to PSD. Removed bond diagram designation with obsolete specs 001-13283. Removed reference Cypress specs and retian industry standards in reliability tests performed table. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12