Document No. 001-58835 Rev. *B ECN #: 4657009 Cypress Semiconductor Automotive Product Qualification Report QTP# 092201 VERSION *B February 2015 Automotive PSoC Radon Device Family S4AD-5, Fab4 Automotive PSoC® CY8C24894 PROGRAMMABLE SYSTEM-ON-CHIP FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 054603 PSoC Device Family on Automotive Technology S4AD-5, Fab4 Oct 06 092201 Qualify CY8C24894-24LFXA Radon Automotive Device at FAB4 Site, S4AD Technology Dec 09 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Marketing Part #: Qualify CY8C24894-24LFXA Radon Automotive Device at FAB4 Site, S4AD Technology CY8C24894 Device Description: 3.3V Automotive 24MHz Programmable System on Chip Cypress Division: Cypress Semiconductor Corporation – Programmable System Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION – S4AD-5 Number of Metal Layers: 2 Metal Metal 1: 500Å Ti /6000Å Al / 300Å TiW Composition: Metal 2: 500Å Ti /8000Å Al / 300Å TiW Passivation Type and Materials: 7000Å Oxide TeOs / 6000Å Nitride Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 um Gate Oxide Material/Thickness (MOS): SiO2, 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4, S4AD-5 CMI, Sonos PACKAGE AVAILABILITY PACKAGE 56-Lead QFN ASSEMBLY FACILITY SITE Amkor-Seoul Korea (SEOUL-L) Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: LY56 Package Outline, Type, or Name: 56-Lead QFN Mold Compound Name/Manufacturer: Hitachi EME-G700 Mold Compound Flammability Rating: V-O per UL94 Mold Compound Alpha Emission Rate: N/A Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: Ni-Pd-Au Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Bond Diagram Designation: 001-50786 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 23C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001−16573 Name/Location of Assembly (prime) facility: Amkor-Korea (L) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate NVM Endurance /High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) AEC-Q100-008 and JESD22-A108 Dynamic Operating Condition, Vcc Max = 5.5V, 125C AEC-Q100-005 and JESD22-A108 Result P/F P P Dynamic Operating Condition, Vcc Max = 5.5V, 125C High Accelerated Saturation Test (HAST) JESD22-A110, 130C, 5.25V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P Temperature Cycle JESD22-A104, -65C to 150C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 P Pressure Cooker 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C JESD22-A102, 121C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P High Temperature Storage JESD22-A103, 150 5C no bias P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-002 200V/500V/750V P Acoustic Microscopy JEDEC JSTD-020 P Lead Integrity JESD22-B105 P Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P NVM Endurance/Data Retention AEC-Q100-005, 150C P External Visual MIL-PRF-38535, MILSTD-883, METHOD 2009 P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Static Latch-up AEC-Q100-004, 125C, 5.79V, 100mA P AEC-Q100-004, 125C, 5.4V, 200mA, 6.5V, 240mA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 RELIABILITY FAILURE RATE SUMMARY Stress/Test NVM Endurance / High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 10,506 Devices 0 N/A N/A 0 PPM 0 0.7 55 33 FIT 500,712 HRs 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 Reliability Test Data QTP #: Device 054603 Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 5 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 5 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 60 0 4547386 610608768 PHIL-M COMP 5 0 Failure Mechanism STRESS: ACOUSTIC, MSL3 STRESS: LEAD INTEGRITY STRESS: BALL SHEAR CY8C29466 (8C29466A) STRESS: BOND PULL CY8C29466 (8C29466A) STRESS: CROSS SECTION CY8C29466 (8C29466A) STRESS: NVM ENDURANCE / DATA RETENTION TEST CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1008 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1008 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1008 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 1396 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 1299 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 1314 0 STRESS: EXTERNAL VISUAL STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 48 815 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 48 815 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 84 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 84 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 054603 Assy Loc Duration Samp Rej Failure Mechanism STRESS: NVM ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1032 82 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1032 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1032 80 0 PHIL-M COMP 3 0 PHIL-M COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 200V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C29466 (8C29466A) 4547386 610608768 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8C29466 (8C29466A) 4547386 610608768 PHIL-M STRESS: STATIC LATCH-UP TESTING, 125C, 5.79V, +/100mA CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 6 0 STRESS: ELECTRICAL DISTRIBUTION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 30 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 30 0 STRESS: PHYSICAL DIMENSION CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 10 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 10 0 PHIL-M 1000 80 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY8C29466 (8C29466A) 4547386 610608768 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 054603 Duration Samp Rej Failure Mechanism STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 96 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 168 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 79 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 168 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 76 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 168 76 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 128 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 128 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 96 78 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 128 78 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M 1000 75 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 500 80 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M 1000 79 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M 1000 80 0 CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 15 0 CY8C29466 (8C29466A) 4549207 610610435 PHIL-M COMP 15 0 STRESS: SOLDERABILITY STRESS: WETTING BALANCE CY8C29466 (8C29466A) 4547386 610608768 PHIL-M COMP 3 0 CY8C29466 (8C29466A) 4548960 610608766 PHIL-M COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 092201 Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, 200V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 3 0 SEOUL-L COMP 3 0 SEOUL-L COMP 3 0 COMP 3 0 COMP 3 0 COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C24894 (8A24894AC) 4846168 610904365 STRESS: ESD-CHARGE DEVICE MODEL, 750V CY8C24894 (8A24894AC) 4846168 610904365 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 500V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS:ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 3 0 STRESS: E-TEST DISTRIBUTION CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4846833 610904364 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4844525 610905172 SEOUL-L COMP 30 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L 48 3496 0 CY8C24894 (8A24894AC) 4846833 610904364 SEOUL-L 48 3515 0 CY8C24894 (8A24894AC) 4844525 610905172 SEOUL-L 48 3495 0 COMP 6 0 COMP 6 0 STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/200mA CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L STRESS: STATIC LATCH-UP TESTING, 125C, 6.5V, +/240mA CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 092201 Duration Samp Rej Failure Mechanism STRESS: ELECTRICAL DISTRIBUTION CY8C24894 (8A24894AC) 4846168 610904365 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4846833 610904364 SEOUL-L COMP 30 0 CY8C24894 (8A24894AC) 4844525 610905172 SEOUL-L COMP 30 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-58835 Rev. *B ECN #: 4657009 Document History Page Document Title: Document Number: Rev. ECN No. ** 2849272 *A 3895754 *B QTP#092201: AUTOMOTIVE PSOC RADON DEVICE CY8C24894 FAMILY S4AD-5, FAB4 001-58835 Orig. of Change NRG NSR 4657009 HSTO Description of Change Created spec Removed VERSION 1.0 in the QTP# 092201 title page. Removed the reference Cypress specs in the reliability tests performed table. Sunset Review. Align qualification report based on the new template in the front page Update Cypress Division to Programmable System Division Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12