PD - 91615B FA38SA50LC HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 500V RDS(on) = 0.13Ω G ID = 38A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. S O T -2 2 7 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew 38 24 150 500 4.0 ± 20 580 38 50 16 -55 to + 150 Units A W W/°C V mJ A mJ V/ns °C 2.5 (1.3N•M) kV Thermal Resistance Parameter RθJC RθCS www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. Max. Units ––– 0.05 0.25 ––– °C/W 1 2/2/99 FA38SA50LC Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Ls Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Min. 500 ––– ––– 2.0 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– IDSS Drain-to-Source Leakage Current Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Typ. ––– 0.66 ––– ––– ––– ––– ––– ––– ––– 280 37 150 42 340 200 330 5.0 Max. Units Conditions ––– V VGS = 0V, ID = 1.0mA ––– V/°C Reference to 25°C, ID = 1mA 0.13 Ω VGS = 10V, ID = 23A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 23A 50 VDS = 500V, VGS = 0V µA 500 VDS = 400V, VGS = 0V, TJ = 125°C 200 VGS = 20V nA -200 VGS = -20V 420 ID = 38A 55 nC VDS = 400V 220 VGS = 10V, See Fig. 6 and 13 ––– VDD = 250V ––– ID = 38A ns ––– RG = 10Ω (Internal) ––– RD = 8Ω, See Fig. 10 ––– nH Between lead, and center of die contact 6900 ––– VGS = 0V 1600 ––– pF VDS = 25V 580 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol 38 ––– ––– showing the A integral reverse ––– ––– 150 p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 38A, VGS = 0V ––– 830 1300 ns TJ = 25°C, IF = 38A ––– 15 22 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 0.80mH ISD ≤ 38A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 38A. (See Figure 12) 2 www.irf.com FA38SA50LC 1000 1000 VGS 1 5V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B OT T O M 4.5V 100 10 4.5V 1 10 100 4.5V 20µ s P U LS E W ID TH T C = 25°C 1 A 1 100 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 100 TJ = 150 ° C TJ = 25 ° C 10 V DS = 50V 20µs PULSE WIDTH 5 6 7 Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 1000 VGS , Gate-to-Source Voltage (V) 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH TJ = 150 °C 10 VD S , Drain-to-So urce V oltage (V ) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 8 ID = 38A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 FA38SA50LC 16000 20 14000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 12000 10000 Ciss 8000 6000 Coss 4000 Crss 2000 ID = 38A VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 80 160 240 320 400 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 100 TJ = 150 ° C 10 TJ = 25 ° C 10us 100us 10 1 0.1 0.2 1ms V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 TC = 25 °C TJ = 150 ° C Single Pulse 1 1.6 1 10 10ms 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com FA38SA50LC 10V VGS QGS RD VDS QG QGD D.U.T. RG + - VDD VG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 90% 50KΩ .2µF 12V .3µF D.U.T. + V - DS 10% VGS VGS td(on) 3mA IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 FA38SA50LC EAS , Single Pulse Avalanche Energy (mJ) 1200 1 5V TOP 1000 L VDS D .U .T RG IA S 20 V D RIV E R + - VD D 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A BOTTOM ID 17A 24A 38A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com FA38SA50LC Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 FA38SA50LC SOT-227 Package Details 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E -A 4 C S 3 G E IG B T 2 5 .7 0 ( 1.0 12 ) 2 5 .2 0 ( .9 9 2 ) 6.2 5 ( .24 6 ) 1 2.50 ( .4 92 ) A1 -B 1 D 4 1 R FULL 7 .50 ( .29 5 ) 1 5.00 ( .5 90 ) 2 S G HEXFET K2 3 4 1 2 3 2 K1 A2 H E XF R E D 3 0 .2 0 ( 1 .1 89 ) 2 9 .8 0 ( 1 .1 73 ) 4X 2 .1 0 ( .0 82 ) 1 .9 0 ( .0 75 ) 8.10 ( .3 19 ) 7.70 ( .3 03 ) 0 .25 ( .01 0 ) M C A M B M 2 .10 ( .08 2 ) 1 .90 ( .07 5 ) 12 .3 0 ( .4 84 ) 11 .8 0 ( .4 64 ) -C 0.1 2 ( .00 5 ) Tube QUANTITY PER TU BE IS 1 0 M4 SREW AND W ASHE R IN CLUDED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99 8 www.irf.com