IRF IRGPC30F

PD - 9.1023
IRGPC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast Speed IGBT
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 600V
VCE(sat) ≤ 2.1V
G
@VGE = 15V, IC = 17A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO -2 4 7 AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
31
17
120
120
±20
10
100
42
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
—
—
—
—
—
0.24
—
6 (0.21)
1.2
—
40
—
Units
°C/W
g (oz)
IRGPC30F
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
Conditions
600 —
—
V
VGE = 0V, IC = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.69 —
V/°C VGE = 0V, IC = 1.0mA
—
1.8
2.1
IC = 17A
VGE = 15V
—
2.4
—
V
IC = 31A
See Fig. 2, 5
—
2.2
—
IC = 17A, TJ = 150°C
Gate Threshold Voltage
3.0
—
5.5
VCE = VGE, I C = 250µA
Temperature Coeff. of Threshold Voltage —
-11
— mV/°C VCE = VGE, I C = 250µA
Forward Transconductance …
6.1
10
—
S
VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current
—
—
250
µA
V GE = 0V, VCE = 600V
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
27
30
IC = 17A
4.1
5.9
nC
VCC = 400V
See Fig. 8
12
15
VGE = 15V
25
—
TJ = 25°C
21
—
ns
IC = 17A, VCC = 480V
210 320
VGE = 15V, RG = 23Ω
300 500
Energy losses include "tail"
0.30 —
2.1
—
mJ
See Fig. 9, 10, 11, 14
2.4
3.5
25
—
TJ = 150°C,
21
—
ns
IC = 17A, VCC = 480V
290
—
VGE = 15V, RG = 23Ω
590
—
Energy losses include "tail"
3.6
—
mJ
See Fig. 10, 14
7.5
—
nH
Measured 5mm from package
670
—
VGE = 0V
100
—
pF
VCC = 30V
See Fig. 7
10
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
‚ VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23Ω, ( See fig. 13a )
ƒ Repetitive rating; pulse width limited
by maximum junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs,
single shot.
IRGPC30F
40
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 24W
LOAD CURRENT (A)
30
Triangular wave:
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
20
10
Ideal diodes
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK )
1000
IC , Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
1000
TJ = 25°C
100
TJ = 150°C
10
VGE = 15V
20µs PULSE WIDTH
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
1
VCC = 100V
5µs PULSE WIDTH
0.1
5
10
15
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
20
IRGPC30F
3.5
VGE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
40
30
20
10
50
75
100
125
3.0
IC = 34A
2.5
I C = 17A
2.0
I C = 8.5A
1.5
1.0
-60 -40 -20
0
25
VGE = 15V
80µs PULSE WIDTH
150
TC , Case Temperature (°C)
0
20
40
60
80 100 120 140 160
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.01
0.00001
0.05
0.02
0.01
t
1
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty fact or D = t
1
/t
2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRGPC30F
20
1400
C, Capacitance (pF)
1200
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = Cce + C gc
1000
Cies
800
Coes
600
400
Cres
200
16
12
8
4
0
0
1
10
0
100
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VCC
VGE
TC
IC
2.6
20
25
30
10
= 480V
= 15V
= 25°C
= 17A
2.4
2.3
2.2
10
15
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.5
0
10
I C = 34A
Total Switching Losses (mJ)
2.7
5
Q g , Total Gate Charge (nC)
V CE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
VCE = 400V
I C = 17A
20
30
40
50
I C = 8.5A
1
-60 -40 -20
60
R G , Gate Resistance (Ω )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
I C = 17A
RG = 23 Ω
VGE = 15V
VCC = 480V
0
20
40
60
80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
IRGPC30F
1000
RG = 23 Ω
T C = 150°C
VCC = 480V
VGE = 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
10
8
6
4
VGE
= 20V
GE
TJ = 125°C
100
SAFE OPERATING AREA
10
1
2
0
10
20
30
1
40
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
-B-
-A5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
-D-
5.30 ( .209)
4.70 ( .185)
2.50 (.089)
1.50 (.059)
4
5.50 (.217)
4.50 (.177)
-C-
*
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
1.40 (.056)
3X
1.00 (.039)
0.25 ( .010) M
3.40 (.133)
3.00 (.118)
NO TES:
1 DIMENSIO NS & T OLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIO NS ARE SHOW N
MILLIMETE RS (INCHES).
4 CONFO RM S TO JEDEC OUTLINE
T O-247AC.
LEAD ASSIGNMENT S
1 - GAT E
2 - CO LLECTO R
3 - EMIT TER
4 - CO LLECTO R
3
14.80 (.583)
14.20 (.559)
100
Fig. 12 - Turn-Off SOA
3.65 (.143)
3.55 (.140)
0.25 (.010) M D B M
15.90 ( .626)
15.30 ( .602)
10
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-Emitter Current (A)
NGE R LEADED (20m m)
* LO
VERS ION AVAILAB LE (TO-247AD)
C A
S
0.80 ( .031)
3X 0.40 ( .016)
2.60 (.102)
2.20 (.087)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
TO ORDE R ADD "-E " SUFF IX
TO PART NUMBER
1000
IRGPC30F
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
480V
4 X IC@25°C
480µF
960V

‚
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V

1000V
‚
ƒ
* Driver same type
as D.U.T., VC = 480V

‚
90%
ƒ
VC
10%
Fig. 14b - Switching Loss
Waveforms
90%
t d(off)
10%
I C 5%
tf
tr
t d(on)
t=5µs
Eon
Eoff
Ets = (Eon +Eoff )
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.