AFIC901N and AFT05MS003N Overview

Announcing High Performance
Rugged Plastic for Mobile
Radio
AFIC901N and AFT05MS003N
J U L Y, 1 5 | 2 0 1 5
External Use
Mobile Radio Applications
Public Safety: P25, TETRA
Construction
Marine
External Use
1
Transportation
Dispatch
M2M
Metering
RF Mobile Radio Challenges
•
Reliability, ruggedness, stability
•
Mission critical applications
• Harsh, uncontrolled environment
•
Reduce equipment size
•
•
Faster time to market
•
•
Lighter handheld radio
Broadband capability to support multi-band/multi-mode radios
Linearity
•
Move to digital radios
External Use
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AFIC901N: 1 W Frequency-configurable LDMOS RFIC
136–941 MHz
Two-stage LDMOS Driver
−
External matching for interstage allows optimization for a range
of voltages and frequencies
−
1 W output power
−
Housed in a QFN 24-lead 4 x 4 package
−
Product Longevity program: warranted availability until 2030
1 W CW @ 7.5 V
Available Reference Circuits
RFin
RFout
Interstage
Match
(External)
External Use
3
Board Frequency
(MHz)
Power
(W P1dB)
Gain
(dB)
Drain Eff.
(%)
PCB Size
136-174
1 CW
30
63.2
0.83” x 1.88”
350-520
1 CW
26
66.8
0.83” x 1.88”
AFT05MS003N
136–941 MHz
• Unmatched input and output LDMOS transistor
• Housed in a SOT-89 over-molded plastic package
• Extreme ruggedness: handles > 65:1 VSWR
• Product Longevity program: warranted availability until 2030
> 3 W (P1dB CW @ 7.5 V)
Available Reference Circuits
External Use
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Board Frequency
(MHz)
Power
(W P1dB)
Gain
(dB)
Drain Eff.
(%)
PCB Size
134-176
3.4 CW
17.3
67.3
0.83” x 1.86”
350-520
3.4 CW
15.3
75.4
0.83” x 1.86”
Freescale Solutions: Airfast Mobile Radio Devices
Features include
•
•
•
•
•
•
Best ruggedness in the industry:
− LDMOS devices handle > 65:1 VSWR with 3 dB
overdrive
High gain
− Eliminates stages, reducing system cost
− AFIC901N includes 2 amplification stages
High efficiency
− Allows use of smaller heatsinks and housings
− Less heat improves reliability
Broadband capability
− Enables full performance across each PMR band
− Slightly reduced performance across multiple bands
Available in cost-effective plastic packages
Freescale product longevity program
Freescale announces the AFT05MS003N 3 W
device and AFIC901N 1 W two-stage device for
handheld/portable applications. These new devices
offer high performance at a lower power level and
lower price point and join the previous announced
devices in the Freescale mobile radio portfolio.
These devices are designed for mobile
applications operating at frequencies from 136 to
941 MHz.
These devices provide significantly improved
performance over previous generation devices.
High gain enables reduction in the number of
stages. Efficiency improvements dramatically
reduce heatsink size. Ruggedness enables reliable
operation in extreme environments.
Recently announced products
AFT05MS006N – in production
AFT09MS031N – in production
AFT09MS007N – in production
AFT09MP055N – in production
AFT09MS015N – in production
AFT05MP075N – in production
AFT05MS031N – in production
AFT05MS004N - in production
External Use
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Key Product Features for Handheld Applications
Designed for 7.5 V and 3.6 V Operation at Frequencies between 136–941 MHz
AFIC901N
AFT05MS003N
AFT05MS004N
AFT05MS006N
AFT09MS007N
• 136 to 941 MHz
• 136 to 941 MHz
• 136 to 941 MHz
• 136 to 941 MHz
• 136 to 941 MHz
• > 1 W output power
• > 3 W output power
• > 5 W output power
• > 6 W output power
at 7.5 V
at 7.5 V
at 7.5 V
at 7.5 V
• > 7 W output power
at 7.5 V
• 2-stage LDMOS
• Ruggedness > 65:1
• > 2 W output power
• Ruggedness > 65:1
VSWR
at 3.6 V
VSWR
VSWR
• High gain
• Ruggedness > 65:1
• High gain < 0.02 W
VSWR
• High gain
• SOT-89 package
drive for rated power
out
• 3 W output power at
3.6 V
• Ruggedness > 65:1
• High gain < 0.02 W
• QFN 4 × 4 package
drive for rated power
out
• SOT-89 package
*Package images
not actual size
External Use
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• Over-molded plastic
package: PLD-1.5W
• Ruggedness > 65:1
VSWR
• High gain < 0.025 W
drive for rated power
out
• Over-molded plastic
package: PLD-1.5W
AFIC901N Reference Circuit – 1 W @ 135–175 MHz
Typical performance:
−
VDD = 7.5 V, Pin = 0 dBm
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Eff.
(%)
135
30.3
30.3
65.4
155
30.7
30.7
63.2
175
30.6
30.6
61.7
PCB size: 0.83” x1.88” (21 cm x 4.8 cm)
Drive-up @ 175 MHz
70
33
65
32
60
Gain
31
55
30
50
29
45
28
40
Eff.
27
32
80
31
75
30
70
29
65
28
60
35
26
30
24
25
26
27
28
29
30
32
27
55
130
140
150
160
Freq (MHz)
Pout (dBm)
External Use
31
7
170
180
Eff (%)
34
Pout (dBm)
Wideband CW performance @ Pin = 0 dBm
Eff (%)
Gain (dB)
•
AFIC901N Reference Circuit – 1 W @ 350–520 MHz
•
Typical performance:
−
VDD = 7.5 V, Pin = 4.0 dBm
Freq
(MHz)
Pout
(dBm)
Gain
(dB)
Eff.
(%)
350
30.4
26.4
55.9
435
31.6
27.6
66.8
520
30.7
26.8
72.2
PCB size: 0.83” x 1.88” (21 cm x 4.8 cm)
Wideband CW performance @ Pin = 4 dBm
Drive-up @ 520 MHz
30
70
31
60
29
50
Eff.
28
26
24
25
26
27
28
29
31
30
80
29
8
70
Eff.
60
30
27
50
20
26
40
300
350
400
450
Freq (MHz)
Pout (dBm)
External Use
30
90
Pout
28
40
27
100
500
550
Eff (%)
Gain
Pout (dBm)
Gain (dB)
31
80
Eff (%)
32
32
AFT05MS003N Reference Circuit – 3 W @ 135–175 MHz
• Frequency band: 135-175 MHz
• VDD = 7.5 V
• Typical performance:
– Pout: 3.4 W
– Efficiency: 67.3%
– Gain: 17.3 dB
Size: 0.83 " x 1.86" ( 2.1 cm x 4.7 cm)
External Use
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AFT05MS003N Reference Circuit – 3 W @ 350–520 MHz
• Frequency band: 350-520 MHz
• VDD = 7.5 V
• Typical performance:
– Pout: > 3 W
– Efficiency: 75.4%
– Gain ≥ 15.3 dB
Size: 0.83" x 1.86" ( 2.1 cm x 4.7 cm)
External Use
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TM
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© 2015 Freescale Semiconductor, Inc. | External Use