Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment. Narrowband Performance (12.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (W) 870 (1) 17.2 77.0 16 136–941 MHz, 16 W, 12.5 V WIDEBAND RF POWER LDMOS TRANSISTOR Wideband Performance (12.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 136--174 0.38 16.0 60.0 15 350--470 0.23 18.5 60.0 16 0.32 16.8 52.3 15 Result 760--870 (2) PLD--1.5W Load Mismatch/Ruggedness Frequency (MHz) Signal Type 870 (1) CW VSWR Pin (W) Test Voltage > 65:1 at all Phase Angles 0.5 (3 dB Overdrive) 17 No Device Degradation Gate Drain 1. Measured in 870 MHz narrowband test circuit. 2. Measured in 760--870 MHz UHF broadband reference circuit. Features Characterized for Operation from 136 to 941 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Integrated Stability Enhancements Wideband — Full Power Across the Band Exceptional Thermal Performance Extreme Ruggedness High Linearity for: TETRA, SSB In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical Applications Output or Driver Stage VHF Band Mobile Radio Output or Driver Stage UHF Band Mobile Radio Output or Driver Stage for 700--800 MHz Mobile Radio Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections AFT09MS015NT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +40 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 17, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C Operating Junction Temperature (1,2) TJ --40 to +150 C Total Device Dissipation @ TC = 25C Derate above 25C PD 125 1.0 W W/C Symbol Value (2,3) Unit RJC 1.0 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 85C, 15 W CW, 12.5 Vdc, IDQ = 100 mA, 870 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) A, passes 150 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 12.5 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 600 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 78 Adc) VGS(th) 1.8 2.2 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.78 Adc) VDS(on) — 0.15 — Vdc gfs — 4.4 — S Reverse Transfer Capacitance (VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.04 — pF Output Capacitance (VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 34 — pF Input Capacitance (VDS = 12.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 74 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 5.9 Adc) Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) AFT09MS015NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ = 100 mA, Pin = 0.3 W, f = 870 MHz Common--Source Amplifier Output Power Drain Efficiency Pout — 16.0 — W D — 77.0 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR 870 CW > 65:1 at all Phase Angles Pin (W) 0.5 (3 dB Overdrive) Test Voltage, VDD Result 17 No Device Degradation AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 100 C, CAPACITANCE (pF) Ciss Coss 10 Crss 1 Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 0.1 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 109 VDD = 12.5 Vdc MTTF (HOURS) 108 ID = 1.47 Amps 1.68 Amps 107 2.02 Amps 106 105 90 100 110 120 130 140 150 160 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 3. MTTF versus Junction Temperature — CW AFT09MS015NT1 4 RF Device Data Freescale Semiconductor, Inc. 870 MHz NARROWBAND PRODUCTION TEST FIXTURE B1 C3 C13 C12 C2 C1 C4 C14 C11 C6 L1 C10 C16 C8 L2 C18 C5 C21 L3 C15 C17 C9 C20 C19 C7 AFT09MS015N Rev. 1 D53709 Figure 4. AFT09MS015NT1 Narrowband Test Circuit Component Layout — 870 MHz Table 6. AFT09MS015NT1 Narrowband Test Circuit Component Designations and Values — 870 MHz Part Description Part Number Manufacturer B1 RF Bead, Short 2743019447 Fair-Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C13 0.1 F Chip Capacitors CDR33BX104AKWS AVX C3, C12 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C11 56 pF Chip Capacitors ATC100B560CT500XT ATC C5, C8, C9 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C6, C7 3.3 pF Chip Capacitors ATC100B3R3CT500XT ATC C14 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp C15, C10 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C16, C17 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC C18, C19 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC C20 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C21 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC L1 5.0 nH, 2 Turn Inductor A02TKLC Coilcraft L2 8.0 nH, 3 Turn Inductor A03TKLC Coilcraft L3 2.5 nH, 1 Turn Inductor A01TKLC Coilcraft PCB Rogers RO4350B, 0.030, r = 3.66 D53709 MTL AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 5 AFT09MS015NT1 6 RF Device Data Freescale Semiconductor, Inc. RF INPUT VGS Z1 Z2 C1 + C5 Z3 C2 Z4 C3 C7 Z7 C9 Z8 DUT C8 Z9 C15 Z10 C10 C17 Z11 C16 Z12 L2 Z13 C12 Z14 C13 C19 Z15 C18 C14 Figure 5. AFT09MS015NT1 Narrowband Test Circuit Schematic — 870 MHz Z6 L1 C11 0.490 0.120 Microstrip 0.610 0.320 Microstrip 0.107 0.320 0.466 Taper 0.082 0.466 0.620 Taper 0.070 0.620 Microstrip 0.300 0.620 Microstrip 0.370 0.620 Microstrip 0.375 0.620 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Description 0.328 0.080 Microstrip Z1 Microstrip Z18 Z17 Z16 Z15 Z14 Z13 Z12 Z11 Z10 Microstrip 0.238 0.080 Microstrip 0.071 0.120 Microstrip 0.599 0.120 Microstrip 0.113 0.320 Microstrip 0.320 0.320 Microstrip 0.159 0.620 0.320 Taper 0.044 0.320 Microstrip 0.198 0.320 Microstrip 0.120 0.620 Microstrip Description Table 7. AFT09MS015NT1 Narrowband Test Circuit Microstrips — 870 MHz Z5 C6 C4 B1 + L3 VDS Z16 C20 Z17 C21 Z18 RF OUTPUT TYPICAL CHARACTERISTICS — 870 MHz 22 VDD = 12.5 Vdc, f = 870 MHz Pout, OUTPUT POWER (WATTS) 20 18 16 14 Pin = 0.30 W 12 10 8 Pin = 0.15 W 6 4 2 0 0 1 0.5 1.5 2 2.5 3 4 3.5 4.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 22 110 20 100 18 16 90 Gps 80 14 70 12 60 10 50 8 40 6 4 2 0 0.01 30 D VDD = 12.5 Vdc, IDQ = 100 mA f = 870 MHz Pout 0.1 20 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) Pout, OUTPUT POWER (WATTS) Figure 6. Output Power versus Gate--Source Voltage at a Constant Input Power 10 0 1 Pin, INPUT POWER (WATTS) Figure 7. Power Gain, Output Power and Drain Efficiency versus Input Power VDD = 12.5 Vdc, IDQ = 100 mA, Pout = 15 W f MHz Zsource Zload 870 0.80 + j0.80 2.05 + j1.80 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 = Test circuit impedance as measured from drain to ground. Input Matching Network Output Matching Network Device Under Test Zsource 50 Zload Figure 8. Narrowband Series Equivalent Source and Load Impedance — 870 MHz AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 7 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT Table 8. 760--870 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 12.5 Volts, IDQ = 100 mA, TA = 25C, CW Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 760 0.29 17.1 51.1 15.0 815 0.24 18.0 57.7 15.0 870 0.30 17.0 59.2 15.0 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 815 CW VSWR Pin (W) > 65:1 at all Phase Angles 0.64 (3 dB Overdrive) Test Voltage, VDD Result 15 No Device Degradation AFT09MS015NT1 8 RF Device Data Freescale Semiconductor, Inc. 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT C1 C9 B1 C16 J1 C10 B2 C2 C4 R1 C3 C11 Q1 C12 C8 C6 C13 L1 C7 C5 C15 C14 D55295 Figure 9. AFT09MS015NT1 UHF Broadband Reference Circuit Component Layout — 760--870 MHz Table 10. AFT09MS015NT1 UHF Broadband Reference Circuit Component Designations and Values — 760--870 MHz Part Description Part Number Manufacturer B1, B2 RF Beads 2743019447 Fair-Rite C1, C5, C6, C7, C8 20 pF Chip Capacitors GQM2195C2E200GB12D Murata C2 8.2 pF Chip Capacitor GQM2195C2E8R2BB12D Murata C3 10 pF Chip Capacitor GQM2195C2E100FB12D Murata C4, C13 56 pF Chip Capacitors GQM2195C2E560GB12D Murata C9 1 F Chip Capacitor GRM31MR71H105KA88L Murata C10 10 F Chip Capacitor GRM31CR61H106KA12L Murata C11, C12 12 pF Chip Capacitors GQM2195C2E120FB12D Murata C14, C15 5.6 pF Chip Capacitors GQM2195C2E5R6BB12D Murata C16 100 pF Chip Capacitor GQM2195C2E101GB12D Murata J1 Right-Angle Breakaway Headers (3 pins) 22-28-8360 Molex L1 22 nH Air Core Inductor 0908SQ-22NJL Coilcraft Q1 RF Power LDMOS Transistor AFT09MS015NT1 Freescale R1 200 , 1/8 W Chip Resistor CRCW0805200RJNEA Vishay PCB 0.020, r = 4.8, FR4 D55295 MTL AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 9 AFT09MS015NT1 10 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 C3 Z4 Z5 C9 C6 B1 Z6 C5 C8 C4 Z7 C7 Z10 Z8 Z9 R1 DUT Z11 Z14 Z12 L1 Z13 C12 C13 Z15 C11 B2 Z16 C10 Z17 C14 VDD 0.100 0.034 Microstrip 0.485 0.034 Microstrip 0.065 0.034 Microstrip 0.040 0.250 Microstrip 0.222 0.250 Microstrip 0.130 0.250 Microstrip 0.027 0.250 Microstrip 0.066 0.034 Microstrip 0.386 0.034 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Description 0.150 0.050 Microstrip Z1 Microstrip Z19 Z18 Z17 Z16 Z15 Z14 Z13 Z12 Z11 Microstrip 0.150 0.050 Microstrip 0.100 0.034 Microstrip 0.450 0.034 Microstrip 0.065 0.034 Microstrip 0.215 0.180 Microstrip 0.210 0.180 Microstrip 0.350 0.034 Microstrip 0.160 0.034 Microstrip 0.027 0.180 Microstrip Description Table 11. AFT09MS015NT1 Narrowband Test Circuit Microstrips — 760--870 MHz Z18 C15 Figure 10. AFT09MS015NT1 UHF Broadband Reference Circuit Schematic — 760--870 MHz C2 Z3 VGS C16 Z19 RF OUTPUT TYPICAL CHARACTERISTICS — 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT 20 19 D 18 61 58 55 17 52 Gps 16 18 15 17 14 16 13 Pout 12 740 760 780 820 800 840 860 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 64 VDD = 12.5 Vdc Pin = 0.32 W (Avg.) IDQ = 100 mA D, DRAIN EFFICIENCY (%) 21 15 14 880 f, FREQUENCY (MHz) Figure 11. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power f = 815 MHz 1.75 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 20 15 VDD = 12.5 Vdc Pin = 0.32 W 10 VDD = 12.5 Vdc Pin = 0.16 W 5 0 2 1 3 VDD = 12.5 Vdc Pin = 0.32 W 1.25 1 VDD = 12.5 Vdc Pin = 0.16 W 0.75 0.5 0.25 Detail A 0 f = 815 MHz 1.5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 12. Output Power versus Gate--Source Voltage Gps, POWER GAIN (dB) 20 760 MHz 19 17 870 MHz 45 25 5 28 Pout 16 21 760 MHz 15 13 0.01 65 815 MHz 870 MHz 760 MHz 18 14 D 815 MHz 14 870 MHz 0.1 7 Gps 0 1 D, DRAIN EFFICIENCY (%) 21 85 f = 815 MHz VDD = 12.5 Vdc IDQ = 100 mA Pout, OUTPUT POWER (WATTS) 22 2 Pin, INPUT POWER (WATTS) Figure 13. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 11 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT Zo = 5 f = 870 MHz Zsource f = 760 MHz f = 870 MHz Zload f = 760 MHz VDD = 12.5 Vdc, IDQ = 100 mA, Pout = 15 W f MHz Zsource Zload 760 1.35 + j0.86 2.53 - j0.83 770 1.23 + j0.79 2.44 - j0.68 780 1.04 + j0.78 2.29 - j0.39 790 0.90 + j0.80 2.25 - j0.16 800 0.84 + j0.84 2.30 - j0.02 810 0.85 + j0.92 2.49 + j0.02 820 0.92 + j0.99 2.79 - j0.06 830 0.96 + j1.02 2.99 - j0.19 840 0.88 + j1.03 3.01 - j0.21 850 0.71 + j1.04 2.85 - j0.05 860 0.54 + j1.05 2.68 + j0.14 870 0.43 + j1.10 2.62 + j0.25 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Zload Figure 14. UHF Broadband Series Equivalent Source and Load Impedance — 760--870 MHz AFT09MS015NT1 12 RF Device Data Freescale Semiconductor, Inc. 0.28 (7.11) 0.165 (4.91) 0.089 (2.26) 0.155 (3.94) Solder pad with thermal via structure. 0.085 (2.16) Inches (mm) Figure 15. PCB Pad Layout for PLD--1.5W A9M15 N( )B YYWW Figure 16. Product Marking AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 13 PACKAGE DIMENSIONS AFT09MS015NT1 14 RF Device Data Freescale Semiconductor, Inc. AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 15 AFT09MS015NT1 16 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2014 Initial Release of Data Sheet 1 July 2014 Fig. 6, Output Power versus Gate--Source Voltage at a Constant Input Power: updated Pin values to reflect correct unit of measure, p. 7 Fig. 8, Narrowband Series Equivalent Source and Load Impedance -- 870 MHz: updated Zsource and Zload values to match final data from product model, p. 7 AFT09MS015NT1 RF Device Data Freescale Semiconductor, Inc. 17 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. AFT09MS015NT1 Document Number: AFT09MS015N Rev. 1, 7/2014 18 RF Device Data Freescale Semiconductor, Inc.