DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BRY62 Silicon controlled switch Product specification Supersedes data of 1997 Jul 21 1999 Apr 22 Philips Semiconductors Product specification Silicon controlled switch DESCRIPTION BRY62 PINNING Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. APPLICATIONS PIN DESCRIPTION 1 anode gate 2 anode 3 cathode 4 cathode gate • Switching applications. MARKING handbook, 2 columns 4 TYPE NUMBER BRY62 3 MARKING CODE a ag A51 1 Top view kg 2 k MBB068 MSB014 Fig.1 Simplified outline (SOT143B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO collector-base voltage open emitter − 70 V VCER collector-emitter voltage RBE = 10 kΩ − 70 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) note 1 − 175 mA ICM peak collector current note 2 − 175 mA IE emitter current (DC) − −175 mA IERM repetitive peak emitter current tp = 10 µs; δ = 0.01 − −2.5 A PNP transistor VCBO collector-base voltage open emitter − −70 V VCEO collector-emitter voltage open base − −70 V VEBO emitter-base voltage open collector − −70 V IE emitter current (DC) − 175 mA IERM repetitive peak emitter current − 2.5 A 1999 Apr 22 tp = 10 µs; δ = 0.01 2 Philips Semiconductors Product specification Silicon controlled switch SYMBOL BRY62 PARAMETER CONDITIONS MIN. MAX. UNIT Combined device Ptot total power dissipation − 250 mW Tstg storage temperature Tamb ≤ 25 °C −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C see Fig.14 Notes 1. Provided the IE rating is not exceeded. 2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series resistance of 100 kΩ. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air VALUE UNIT 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor ICER collector cut-off current VCE = 70 V; RBE = 10 kΩ − 100 nA VCE = 70 V; RBE = 10 kΩ; Tj = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB = 5 V; Tj = 150 °C − 10 µA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 500 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA − 900 mV hFE DC current gain IC = 10 mA; VCE = 2 V 50 − fT transition frequency IC = 10 mA; VCE = 2 V; f = 100 MHz 100 − Cc collector capacitance IE = ie = 0; VCB = 20 V; f = 1 MHz − 5 pF Ce emitter capacitance IC = ic = 0; VEB = 1 V; f = 1 MHz − 25 pF MHz PNP transistor ICEO collector cut-off current IB = 0; VCE = −70 V; Tj = 150 °C − −10 µA IEBO emitter cut-off current IC = 0; VEB = −70 V; Tj = 150 °C − −10 µA hFE DC current gain IE = 1 mA; VCB = −5 V 3 15 IA = 50 mA; IAG = 0 − 1.4 V Combined device VAK IH 1999 Apr 22 forward on-state voltage holding current RKG-K = 10 kΩ IA = 50 mA; IAG = 0; Tj = − 55 °C − 1.9 V IA = 1 mA; IAG = 10 mA − 1.2 V RKG-K = 10 kΩ; IAG = 10 mA; VBB = −2 V; (see Fig.5) − 1 mA 3 Philips Semiconductors Product specification Silicon controlled switch SYMBOL BRY62 PARAMETER CONDITIONS MIN. MAX. UNIT Switching times turn-on time ton toff turn-off time VKG-K = −0.5 to 4.5 V; RKG-K = 1 kΩ; see Figs 6 and 7 − 0.25 µs VKG-K = −0.5 to 0.5 V; RKG-K = 10 kΩ − 1.5 µs RKG-K = 10 kΩ; see Figs 8 and 9 − 15 µs N P N c 1,b 2 a (anode) (e2 ) e2 handbook, halfpage ag (anode gate) (c 1,b 2) PNP transistor b 1,c 2 kg (cathode gate) (b1 ,c 2) P N P NPN transistor e1 k (cathode) (e1 ) MBB680 Fig.2 Two transistor equivalent circuit. 1999 Apr 22 MBB681 Fig.3 PNPN silicon controlled switch structure. 4 Philips Semiconductors Product specification Silicon controlled switch handbook, halfpage BRY62 a IA IA handbook, halfpage IAG IAG a ag IKG VAK ag RKG-K kg −IK kg VBB k k DUT MBB683 MBB682 Fig.4 Silicon controlled switch symbol. Fig.5 Equivalent test circuit for holding current. V (V) i handbook, halfpage MBB687 4.5 90 % handbook, halfpage +12 V 2.7 kΩ 16 kΩ VAK 0 –0.5 +50 V 10 % time RKG-K VI VAG-K MBB685 ton Fig.7 Fig.6 Test circuit for turn-on time. 1999 Apr 22 5 time Pulse duration increased until dashed curve disappears. Philips Semiconductors Product specification Silicon controlled switch BRY62 VAK halfpage handbook, MBB686 (V) +12 V handbook, halfpage +50 V 1 kΩ 2.7 kΩ 12 C = Copt 16 kΩ C VAK tq mercury wetted contact C < Copt 0 time RKG-K MBB684 – 12 Fig.9 Capacitance increased until C = Copt dashed curve disappears. Fig.8 Test circuit for turn-off time. MBB584 MBB583 1.2 1.8 handbook, halfpage handbook, halfpage hFE h FE X VAG-K = 5 V X 0.8 1.4 2V 0.4 1.0 0.6 0 0 50 IAG (mA) 100 0 50 100 Tamb ( o C) 150 X is the value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb = 25 °C. X is the value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb = 25 °C. Fig.10 Normalized DC current gain as a function of anode gate current. Fig.11 Normalized DC current gain as a function of ambient temperature. 1999 Apr 22 6 Philips Semiconductors Product specification Silicon controlled switch BRY62 MBB581 MBB587 1.2 1.2 handbook, halfpage handbook, halfpage IH VAK X X 1.1 1 1 0.8 0.9 0.8 −50 0.6 50 0 50 100 150 Tamb ( o C) 0 50 100 150 Tamb (oC) X is the value of VAK at IC = 10 mA; IAG = 10 mA; IA = 1 mA; VBB = −2 V; RKG-K = 10 kΩ; Tamb = 25 °C. X is the value of IH at IC = 10 mA; IAG = 10 mA; VBB = −2 V; Rkg-K = 10 kΩ; Tamb = 25 °C. Fig.12 Normalized anode-cathode voltage as a function of ambient temperature. Fig.13 Normalized holding current as a function of ambient temperature. MBB580 300 handbook, halfpage P tot (mW) 200 100 0 0 50 150 Tamb ( o C) 150 Fig.14 Power derating curve. 1999 Apr 22 7 Philips Semiconductors Product specification Silicon controlled switch BRY62 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1999 Apr 22 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification Silicon controlled switch BRY62 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 9 Philips Semiconductors Product specification Silicon controlled switch BRY62 NOTES 1999 Apr 22 10 Philips Semiconductors Product specification Silicon controlled switch BRY62 NOTES 1999 Apr 22 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp12 Date of release: 1999 Apr 22 Document order number: 9397 750 05727