DISCRETE SEMICONDUCTORS DATA SHEET BFR53 NPN 2 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Oct 28 Philips Semiconductors Product specification NPN 2 GHz wideband transistor FEATURES BFR53 PINNING • Very low intermodulation distortion • Very high power gain. APPLICATIONS PIN DESCRIPTION 1 base 2 emitter 3 collector 3 fpage 1 • Thick and thin-film circuits. 2 Top view MSB003 Marking code: N1. DESCRIPTION Fig.1 SOT23. NPN wideband transistor in a plastic SOT23 package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 18 V VCEO collector-emitter voltage open base − 10 V ICM peak collector current f > 1 MHz − 100 mA Ptot total power dissipation Ts ≤ 85 °C − 250 mW Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz; Tamb = 25 °C 0.9 − pF fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C 2 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C 10.5 − dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 18 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA ICM peak collector current f > 1 MHz − 100 mA Ptot total power dissipation Ts ≤ 85 °C (note 1) − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 28 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1 VALUE UNIT 260 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain CONDITIONS MIN. TYP. MAX. IE = 0; VCB = 10 V − − 50 IC = 25 mA; VCE = 5 V; see Fig.2 25 − − IC = 50 mA; VCE = 5 V; see Fig.2 25 − − − 0.9 − Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz; see Fig.3 UNIT nA pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.5 − pF Cre feedback capacitance IC = 2 mA; VCE = 5 V; f = 1 MHz; Tamb = 25 °C − 0.9 − pF fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; see Fig.4 − 2 − GHz GUM maximum unilateral power gain (note 1) IC = 30 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 °C; see Fig.5 − 10.5 − dB F noise figure IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C; see Fig.6 − − 5 dB Note 2 S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB˙ . 2 2 1 – S 11 1 – S 22 1997 Oct 28 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 MEA458 MEA457 100 2.0 Cc (pF) handbook, halfpage handbook, halfpage h FE 90 1.6 80 1.2 70 0.8 60 0.4 50 0 50 I C (mA) 0 100 VCE = 5 V; Tj = 25 °C. Fig.2 4 0 8 12 16 V CB (V) 20 IE = ie = 0; f = 1 MHz; Tj = 25 °C. DC current gain as a function of collector current; typical values. Fig.3 Collector capacitance as a function of collector-base voltage; typical values. MEA455 MEA459 30 2.2 handbook, halfpage handbook, halfpage gain (dB) fT (GHz) 1.8 20 1.4 10 G UM I S 12 I 2 0 2 10 1.0 0 25 I C (mA) 50 VCE = 5 V; f = 500 MHz; Tj = 25 °C. Fig.4 1997 Oct 28 10 3 f (MHz) 104 IC = 30 mA; VCE = 5 V; Tamb = 25 °C. Transition frequency as a function of collector current; typical values. Fig.5 4 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 MEA460 MEA456 50 10 handbook, halfpage handbook, halfpage BS (mS) F (dB) 3.3 3.5 F = 5.5 dB 5.0 4.5 4.0 0 5 −50 0 0 10 20 30 40 I C (mA) 0 20 40 60 80 100 G S (mS) VCE = 5 V; f = 500 MHz; GS = 20 mS; BS is tuned; Tamb = 25 °C. IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.6 1997 Oct 28 Minimum noise figure as a function of collector current; typical values. Fig.7 Circles of constant noise figure; typical values. 5 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 1 handbook, full pagewidth 0.5 2 0.2 5 10 1000 MHz +j 0.2 0 0.5 800 1 2 5 ∞ 10 500 300 –j 10 100 5 0.2 2 0.5 MEA461 1 IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C. Fig.8 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 60 o 120 o 100 150 o 30 o 300 500 180 o 25 15 ϕ 0o 1000 MHz 5 ϕ 30 o 150 o 60 o 120 o 90 o MEA463 IC = 30 mA; VCE = 5 V; Tamb = 25 °C. Fig.9 Common emitter forward transmission coefficient (S21). 1997 Oct 28 6 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 90 o handbook, full pagewidth 60 o 120 o 1000 MHz 800 150 o 30 o 500 300 ϕ 100 180 o 0.05 0.10 0o 0.15 ϕ 30 o 150 o 60 o 120 o 90 o MEA464 IC = 30 mA; VCE = 5 V; Tamb = 25 °C. Fig.10 Common emitter reverse transmission coefficient (S12). 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 –j 2 800 500 5 ∞ 10 300 10 100 1000 MHz 0.2 5 2 0.5 1 MEA462 IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C. Fig.11 Common emitter output reflection coefficient (S22). 1997 Oct 28 7 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 PACKAGE OUTLINES Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1997 Oct 28 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Oct 28 9 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 NOTES 1997 Oct 28 10 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 NOTES 1997 Oct 28 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 28 Document order number: 9397 750 02896