DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 26 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES • Double internal input and output matching for an optimum wideband capability and high gain PIN SYMBOL 1 c1 collector 1 2 c2 collector 2 3 b1 base 1 4 b2 base 2 5 e emitter • Polysilicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATION • Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION c1 handbook, halfpage 1 2 b1 DESCRIPTION e NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V. 5 b2 5 3 4 Top view c2 MAM031 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (A) Po sync (W) Gp (dB) CW class-A 860 25 2 × 2.25 ≥20(1) ≥10(1) Note 1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Jul 26 2 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 28 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 15 A IC(AV) average collector current − 15 A Ptot total power dissipation − 145 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C Tmb = 70 °C; note 1 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting-base Ptot = 145 W; Tmb = 70 °C note 1 0.9 K/W Rth mb-h thermal resistance from mounting-base to heatsink note 1 K/W Note to Limiting values and Thermal characteristics 1. Total device; both sections equally loaded. MGD540 320 handbook, halfpage Ptot (W) (2) 240 (1) 160 80 0 0 40 80 120 Tmb °C 160 (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 Power derating curve. 1996 Jul 26 3 0.15 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IC = 30 mA; IE = 0 60 − − V collector-emitter breakdown voltage IC = 60 mA; IB = 0 28 − − V emitter-base breakdown voltage IE = 1.2 mA; IC = 0 2.5 − − V ICBO collector-base leakage current VCB = 27 V; VBE = 0 − − 3 mA ICEO collector-emitter leakage current VCE = 20 V − − 6 mA hFE DC current gain VCE = 25 V; IC = 2.25 A 30 − 140 Cc collector capacitance VCB = 25 V; IE = ie = 0; f = 1 MHz − 36(1) − pF Cre feedback capacitance VCE = 25 V; IB = 0; f = 1 MHz − 22 − pF V(BR)CBO collector-base breakdown voltage V(BR)CEO V(BR)EBO Note 1. The value of Cc is that of the die only; it is not measurable, because of the internal matching network. MGD541 MGD542 80 handbook, halfpage 160 handbook, halfpage hFE Cc (pF) 120 60 80 40 40 20 0 0 2 4 IC (A) 0 6 10 40 30 VCB (V) VCE = 25 V; tp = 500 µs; δ = <1 %. IE = ie = 0; f = 1 MHz. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. 1996 Jul 26 20 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull class-A test circuit. MODE OF OPERATION f (MHz) VCE (V) ICQ (A) Po sync (W) Gp (dB) dim (dB) CW class-A 860 25 2 × 2.25 ≥20(1) ≥10(1) ≤−54(1) CW class-A 860 25 2 × 2.25 ≥20(2) ≥10(2) ≤−51(2) Notes 1. Three-tone test method (vision carrier −8 dB, sound carrier −10 dB, sideband signal −16 dB), 0 dB corresponds to peak sync level. 2. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLV859 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the conditions: VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; Th = 25 °C; Po sync = 20 W. MGD543 80 MGD544 14 handbook, halfpage handbook, halfpage Po sync (W) (1) Gp (dB) (2) (1) (2) 60 10 40 6 20 0 2 0 2 4 6 8 Pi sync (W) 0 20 40 60 80 Po sync (W) VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). (1) Th = 25 °C. (2) Th = 70 °C. VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). (1) Th = 25 °C. (2) Th = 70 °C. Fig.5 Fig.6 Output power as a function of input power; typical values. 1996 Jul 26 5 Power gain as a function of output power; typical values. Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 MGD545 −10 MGD546 -40 handbook, halfpage handbook, halfpage dim (dB) dim (dB) −30 -50 (1) (2) (1) (2) −50 -60 −70 -70 0 20 40 60 80 Po sync (W) 3 4 5 IC (A) VCE = 25 V; ICQ = 2 × 2.25 A; f = 860 MHz; (3-tone; −8/−16/−10 dB). (1) Th = 70 °C. (2) Th = 25 °C. VCE = 25 V; f = 860 MHz; (3-tone; −8/−16/−10 dB). (1) Th = 70 °C. (2) Th = 25 °C. Fig.7 Fig.8 Intermodulation distortion as a function of output power; typical values. 1996 Jul 26 6 6 Intermodulation distortion as a function of collector current; typical values. 1996 Jul 26 7 input 50 Ω C4 +VBB C8 R6 C14 R5 C7 L1 C16 L3 L5 L7 C1 L2 B1 L6 C18 L8 L10 C19 L12 L11 TR1 C20 L13 C22 L15 C9 C15 L14 C21 L16 B2 C11 ,,,,, ,,,,,,,, ,,,,, ,,,,, ,,,,, ,,,,,,,, ,,,,, ,,,,, L9 C2 C10 MGD547 C12 output 50 Ω C13 +VCC UHF linear push-pull power transistor Fig.9 Class-A test circuit at f = 860 MHz. L4 C17 DUT R1 R2 TR2 ,,,,, ,,,,, ,,,,,,,, ,,,,, ,,,,, ,,,,,,,, ,,,,, ,,,,, R3 P1 TR2 C3 L17 ,, C6 C5 handbook, full pagewidth R4 Vsupply Philips Semiconductors Product specification BLV859 Philips Semiconductors Product specification UHF linear push-pull power transistor handbook, full pagewidth BLV859 115 55 TR1 E C B R3 P1 TR2 C5 C6 R4 C1 C3 VCC L17 C13 R1 R2 C2 B1 C4 B2 L7 C7 R5 C14 R6 50 Ω input C8 L1 & L2 C16 & C17 L5 L3 GND L9 B C L11 C20 & C21 C19 & C20 L13 C9 C10 BLV859 L4 B L6 C18 & C19 C L8 50 Ω output C15 L14 L12 C22 & C23 C21 & C22 L10 L15 & L16 C12 C11 MGD551 inner lead and outer lead are shorted. (repeat for each balun) Dimensions in mm. Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit. 1996 Jul 26 8 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2, C3, C5, C6 multilayer ceramic chip capacitor; 15 nF C4 solid aluminium capacitor 47 µF; 25 V C7, C8 multilayer ceramic chip capacitor 10 nF 805 1206 C9, C10, C11, C12 multilayer ceramic chip capacitor 100 nF C13 solid aluminium capacitor 10 µF; 63 V C14, C15 multilayer ceramic chip capacitor; note 1 47 pF C16 multilayer ceramic chip capacitor; note 1 8.2 pF C17, C21 Tekelec Giga trim 37271 0.6 to 4.5 pF C18 multilayer ceramic chip capacitor; note 1 13 pF C19 multilayer ceramic chip capacitor; note 1 3.9 pF C20 multilayer ceramic chip capacitor; note 1 12 pF C22 multilayer ceramic chip capacitor; note 1 9.1 pF 805 2222 590 16629 2222 030 36479 2222 590 16627 2222 591 16641 2222 030 381109 L1, L2, L15, L16 stripline; note 2 50 Ω 2 × 30.6 mm L3, L4 stripline; note 2 50 Ω 2 × 9.5 mm L5, L6 stripline; note 2 32.4 Ω 4 × 3 mm L7, L8, L9, L10 stripline; note 2 16.2 Ω 9.5 × 2.6 mm L11, L12 stripline; note 2 37.5 Ω 3.5 × 3.4 mm L13, L14 stripline; note 2 50 Ω 2 × 13.9 mm L17 stripline; note 2 77.7 Ω 1 × 120 mm B1, B2 Semi rigid coax balun UT70-25 Z = 25 Ω, ±1.5 Ω 70 mm R1 SMD resistor 220 Ω 805 2322 734 22201 R2 SMD resistor 1.8 Ω 805 2322 734 21808 R3 SMD resistor 2.7 kΩ 805 2322 734 22702 R4 SMD resistor 33 Ω 805 2322 734 23309 R7, R8 SMD resistor 3.3 Ω 805 2322 734 23308 P1 Murata potentiometer RG4M08-102VM-TG 1 kΩ TR1 NPN transistor BD139 9330 912 20112 TR2 double PNP transistor BVC62 5332 130 60505 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad PCB: Rogers ULTRALAM 200 (B0300M1046QB) (εr = 2.55); thickness 0.76 mm. 1996 Jul 26 9 Philips Semiconductors Product specification UHF linear push-pull power transistor MGD548 8 BLV859 MGD549 8 handbook, halfpage handbook, halfpage ZL (Ω) 6 Zi (Ω) RL 6 xi 4 4 2 XL 2 ri 0 450 550 650 750 0 −2 450 850 950 f (MHz) 550 650 750 850 950 f (MHz) VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C. VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C. Fig.11 Input impedance (per section) as a function of frequency (series components); typical values. Fig.12 Load impedance (per section) as a function of frequency (series components); typical values. MGD550 20 handbook, halfpage Gp (dB) 16 12 8 handbook, halfpage 4 Zi ZL 0 450 550 650 750 MBA451 850 950 f (MHz) VCE = 25 V; ICQ = 2 × 2.25 A; Po sync = 20 W (total device); Th = 25 °C. Fig.13 Gain as a function of frequency; typical values. 1996 Jul 26 Fig.14 Definition of transistor impedance. 10 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 PACKAGE OUTLINE handbook, full pagewidth 0.13 2.47 2.20 1.65 5.4 max seating plane 21.85 0.25 M 8.51 8.25 (4x) 2.54 1 2 10.4 max 3.3 9.8 15.6 3.0 max 5 3 4 11.05 27.94 34.3 max Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed. Fig.15 SOT262B. 1996 Jul 26 11 MSA453 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 26 12 Philips Semiconductors Product specification UHF linear push-pull power transistor NOTES 1996 Jul 26 13 BLV859 Philips Semiconductors Product specification UHF linear push-pull power transistor NOTES 1996 Jul 26 14 BLV859 Philips Semiconductors Product specification UHF linear push-pull power transistor NOTES 1996 Jul 26 15 BLV859 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127041/1200/02/pp16 Date of release: 1996 Jul 26 Document order number: 9397 750 00987