DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLT94 UHF power transistor Product specification Supersedes data of 1997 Nov 04 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor BLT94 FEATURES PINNING • Emitter ballasting resistors for an optimum temperature profile PIN DESCRIPTION 1, 4, 5, 8 • Gold metallization ensures excellent reliability. emitter 2, 3 base 6, 7 collector APPLICATIONS • Common emitter class-AB and B operation in portable radio transmitters in the 900 MHz communication band. handbook, halfpage 8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 1998 Jan 28 f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) 900 7.5 6 ≥8 ≥50 typ. 10 typ. 60 2 Philips Semiconductors Product specification UHF power transistor BLT94 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 2.5 A Ptot total power dissipation Tmb ≤ 60 °C − 13 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Tmb ≤ 60 °C; Ptot = 13 W thermal resistance from junction to mounting base Rth j-mb MGM525 10 handbook, halfpage IC (A) 1 10−1 1 10 VCE (V) 102 Tmb = 60 °C. Fig.2 DC SOAR. 1998 Jan 28 3 VALUE UNIT 8 K/W Philips Semiconductors Product specification UHF power transistor BLT94 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)CBO collector-base breakdown voltage MIN. open emitter; IC = 20 mA TYP. MAX. UNIT 20 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 40 mA 10 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 4 mA 3 − − V ICES collector leakage current VBE = 0; VCE = 7.5 V − − 1 mA 25 hFE DC current gain IC = 1.2 A; VCE = 5 V − − Cc collector capacitance IE = ie = 0; VCB = 7.5 V; f = 1 MHz − 24 − pF Cre feedback capacitance IC = 0; VCE = 7.5 V; f = 1 MHz − 17 − pF MGM526 MGM527 100 50 handbook, halfpage handbook, halfpage Cc (pF) hFE 80 40 60 30 40 20 20 10 0 0 0.4 0 0.8 1.2 1.6 IC (A) 2.0 0 VCE = 5 V; Tj = 25 °C. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001. Fig.3 8 12 16 20 VCB(V) IE = ie = 0; f = 1 MHz; Tj = 25 °C. DC current gain as a function of collector current; typical values. 1998 Jan 28 4 Fig.4 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLT94 APPLICATION INFORMATION RF performance at Tmb ≤ 60 °C in a common emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-AB f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) 900 7.5 50 6 ≥8 ≥50 typ. 10 typ. 55 Ruggedness in class-AB operation The BLT94 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: CW, class-AB operation; VCE = 9 V; PL = 6 W and f = 900 MHz; Tmb ≤ 60 °C. MBK387 14 handbook, G halfpage 70 p (dB) handbook, halfpage PL (W) (%) 12 60 ηC MBK388 10 ηC 8 10 50 8 6 40 Gp 6 30 4 20 2 10 4 2 0 0 0 2 4 6 8 PL (W) 0 10 0 Power gain and collector efficiency as functions of load power; typical values. 1998 Jan 28 0.8 1.2 PD (W) 1.6 CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA; f = 900 MHz; Tmb ≤ 60 °C. CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA; f = 900 MHz; Tmb ≤ 60 °C. Fig.5 0.4 Fig.6 5 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power transistor BLT94 Test circuit information VBE handbook, full pagewidth C13 VCE C6 C5 C7 C8 L4 R1 L5 L6 L3 L1 input 50 Ω C3 C2 C11 L8 output 50 Ω L2 DUT C1 L7 C9 C10 C12 C4 MGM531 Fig.7 Common emitter test circuit for class-AB operation at f = 900 MHz. 1998 Jan 28 6 Philips Semiconductors Product specification UHF power transistor BLT94 List of components used in test circuit (see Figs 7 and 8). COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor; note 1 2.7 pF C3 multilayer ceramic chip capacitor; note 1 82 pF C4 multilayer ceramic chip capacitor; note 1 15 pF C5 multilayer ceramic chip capacitor 1 nF C6 multilayer ceramic chip capacitor; note 1 100 pF C7 multilayer ceramic chip capacitor 39 nF DIMENSIONS C8 electrolytic capacitor 4.7 µF, 10 V C9, C10 multilayer ceramic chip capacitor; note 1 6.8 pF C11 multilayer ceramic chip capacitor; note 1 4.3 pF C12 multilayer ceramic chip capacitor; note 1 0.7 pF C13 electrolytic capacitor 10 µF, 10 V L1 stripline; note 2 50 Ω 3.17 x 2.28 mm L2 stripline; note 2 50 Ω 11 x 2.28 mm L3 5 turns 0.5 mm enamelled copper wire L4 chipbead L5 2 turns 1 mm enamelled copper wire L6 stripline; note 2 50 Ω 3.82 x 2.28 mm L7 stripline; note 2 50 Ω 6.18 x 2.28 mm L8 stripline; note 2 50 Ω 5.62 x 2.28 mm R1 SMD resistor 27 Ω CATALOGUE No. int. dia. = 3 mm leads = 2 x 7.5 mm 1µH int. dia. = 6 mm; leads = 2 x 7.5 mm Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed circuit board, with DUROID dielectric (εr = 2.2); thickness 0.79 mm, thickness of the copper sheet 2 x 35 µm. 1998 Jan 28 7 Philips Semiconductors Product specification UHF power transistor BLT94 55.9 handbook, full pagewidth 30.9 VBE C5 VCE R1 + C8 + L4 C6 C7 C13 L5 L3 C11 C3 L1 C1 C2 BLT94 L2 C4 L6 L7 C9 C10 L8 C12 MGM532 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Printed-circuit board and component layout for 900 MHz class-AB test circuit in Fig.7. 1998 Jan 28 8 Philips Semiconductors Product specification UHF power transistor BLT94 MGM528 MGM529 6 6 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 4 4 RL ri 2 2 0 0 xi −2 700 800 XL 900 f (MHz) −2 700 1000 800 900 f (MHz) 1000 CW, class-AB operation; VCE = 7.58 V; ICQ = 50 mA; PL = 6 W; Tmb ≤ 60 °C. CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA; PL = 6 W; Tmb ≤ 60 °C. Fig.9 Fig.10 Load impedance as a function of frequency (series components); typical values. Input impedance as a function of frequency (series components); typical values. MGM530 16 handbook, halfpage Gp (dB) 12 ndbook, halfpage 8 Zi 4 0 700 ZL 800 900 f (MHz) MBA451 1000 CW, class-AB operation; VCE = 7.5 V; ICQ = 50 mA; PL = 6 W; Tmb ≤ 60 °C. Fig.11 Power gain as a function of frequency (series components); typical values. 1998 Jan 28 Fig.12 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF power transistor BLT94 MOUNTING RECOMMENDATIONS Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board. full pagewidth 1.87 (2×) 0.60 (4×) 0.80 (2×) 0.50 (12×) 7.38 3.60 1.00 (8×) 1.00 (9×) 4.60 MGK390 Dimensions in mm. Fig.13 Reflow soldering footprint for SOT409A. 1998 Jan 28 10 Philips Semiconductors Product specification UHF power transistor BLT94 PACKAGE OUTLINE Ceramic surface mounted package; 8 leads SOT409A D A D2 B c w2 B H1 8 5 L E2 H E A 1 4 e α w1 b Q1 0 2.5 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 E E2 e H H1 L Q1 w1 w2 α mm 2.36 2.06 0.58 0.43 0.23 0.18 5.94 5.03 5.16 5.00 4.93 4.01 4.14 3.99 1.27 7.47 7.26 4.39 4.24 1.02 0.51 0.10 0.00 0.25 0.25 7° 0° inches 0.093 0.081 0.023 0.017 0.009 0.007 0.234 0.198 0.203 0.197 0.194 0.158 0.163 0.157 0.050 0.294 0.286 0.173 0.167 0.040 0.020 0.004 0.000 0.010 0.010 7° 0° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 98-01-27 SOT409A 1998 Jan 28 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification UHF power transistor BLT94 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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