DISCRETE SEMICONDUCTORS DATA SHEET BLV946 UHF power transistor Product specification Supersedes data of 1995 Jun 29 1997 Oct 30 Philips Semiconductors Product specification UHF power transistor BLV946 FEATURES PINNING - SOT273A • Internal input and output matching for easy matching, high gain and efficiency PIN • Poly-silicon emitter ballasting resistors for an optimum temperature profile 1 emitter 2 emitter 3 collector 4 base 5 emitter 6 emitter • Gold metallization ensures excellent reliability. APPLICATIONS • Base stations in the 850 to 960 MHz frequency range. DESCRIPTION DESCRIPTION handbook, halfpage 2 4 6 1 3 5 NPN silicon planar transistor intended for common emitter class-AB operation. The transistor has internal input and output matching by means of MOS capacitors. The encapsulation is a SOT273A flange envelope with a ceramic cap. All leads are isolated from the flange. Top view MBK131 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) CW, class-AB 960 26 40 ≥9 ≥55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Oct 30 2 Philips Semiconductors Product specification UHF power transistor BLV946 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 6 A IC(AV) average collector current − 6 A Ptot total power dissipation − 90 W Tstg storage temperature range −65 +150 °C Tj operating junction temperature − +200 °C up to Tmb = 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink Ptot = 90 W; Tmb = 25 °C MLD231 10 VALUE UNIT 1.94 K/W 0.3 K/W MLD232 120 handbook, halfpage handbook, halfpage Ptot (W) IC (A) (2) 80 (1) (2) (1) 40 1 1 10 V CE (V) 0 10 2 0 (1) Tmb = 25 °C. (2) Th = 70 °C. 80 120 Th ( o C) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. 1997 Oct 30 40 Fig.3 Power derating curve. 3 160 Philips Semiconductors Product specification UHF power transistor BLV946 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)CBO collector-base breakdown voltage MIN. TYP. MAX. UNIT open emitter; IC = 30 mA 70 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 60 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 1.2 mA 3 − − V ICES collector leakage current VBE = 0; VCE = 28 V − − 3 mA hFE DC current gain VCE = 10 V; IC = 2 A; note 1 30 − 120 Cc collector capacitance VCB = 26 V; IE = ie = 0; f = 1 MHz; note 2 − 33 − Notes 1. Measured under pulsed conditions: tp ≤ 500 µs; δ ≤ 0.01. 2. CC value is that of the die only; it is not measurable because of internal matching network. MLD233 100 handbook, halfpage h FE 80 (1) 60 (2) 40 20 0 0 1 2 3 4 5 6 I C (A) Measured under pulsed conditions; tp ≤ 500 µs; δ ≤ 0.01. (1) VCE = 26 V. (2) VCE = 10 V. Fig.4 DC current gain as a function of collector current; typical values. 1997 Oct 30 4 pF Philips Semiconductors Product specification UHF power transistor BLV946 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter, class-AB test circuit; Rth mb-h = 0.3 K/W. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) CW, class-AB 960 26 130 40 ≥9 typ. 11 ≥55 typ. 60 Ruggedness in class-AB operation The BLV946 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 130 mA; Th = 25 °C; Rth mb-h = 0.3 K/W. MLD234 16 MLD235 80 handbook, halfpage 60 handbook, halfpage η (%) Gp (dB) PL (W) 60 12 Gp 40 40 8 η 20 20 4 0 0 0 20 40 0 60 0 P L (W) 2 VCE = 26 V. ICQ = 130 mA. VCE = 26 V. ICQ = 130 mA. f = 960 MHz. f = 960 MHz. Fig.5 Power gain and efficiency as functions of load power; typical values. 1997 Oct 30 Fig.6 5 4 6 8 P i (W) 10 Load power as a function of input power; typical values. Philips Semiconductors Product specification UHF power transistor BLV946 handbook, full pagewidth L6 Vbias C7 C9 L7 C12 R1 C5 C6 C4 R2 C8 L5 L8 C10 VCC C14 C13 C15 C11 ,,,, ,,,,,,,,, ,,,, ,,,,,,,,, ,,,,, L9 input 50 Ω L1 C1 L2 L4 C3 DUT L10 C16 L11 C2 L12 C17 output 50 Ω C18 L3 MLD236 Fig.7 Class-AB test circuit at 960 MHz. List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C2, C17, C18 TEKELEC variable capacitor type 6451 12 pF C3, C16 multilayer ceramic chip capacitor; note 1 68 pF, 500 V C4, C13 electrolytic capacitor 10 µF, 63 V C5, C8, C10, C13, C15 multilayer ceramic chip capacitor; note 1 20 pF, 500 V C6 multilayer ceramic chip capacitor 100 nF, 50 V C7, C11 multilayer ceramic chip capacitor; note 1 100 pF, 500 V C9 multilayer ceramic chip capacitor 470 pF, 50 V 2222 731 18471 C12 multilayer ceramic chip capacitor 10 nF, 50 V 2222 731 18103 C14 multilayer ceramic chip capacitor 22 nF, 50 V 2222 731 18223 L1 stripline; note 2 50 Ω length 36 mm width 2.2 mm L2 stripline; note 2 50 Ω length 8 mm width 2.2 mm L3, L9 stripline; note 2 8Ω length 10 mm width 20 mm L4, L10 stripline; note 2 37 Ω length 4.5 mm width 3.5 mm 1997 Oct 30 6 2222 030 28109 2222 581 76641 Philips Semiconductors Product specification UHF power transistor COMPONENT BLV946 DESCRIPTION VALUE DIMENSIONS 2.2 µH L5 microchoke L6, L7 Ferroxcube wide band HF choke, grade 3B L8 4.5 turns enamelled 1 mm copper wire 50 nH internal dia. 4 mm close wound L11 stripline; note 2 50 Ω length 7 mm width 2.2 mm L12 stripline; note 2 50 Ω length 37 mm width 2.2 mm R1, R2 metal film resistor 100 Ω; 0.4 W CATALOGUE No. 4322 057 02281 4312 020 36642 2322 171 11001 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (εr = 2.2); thickness 1⁄32"; thickness of the copper sheet 2 × 35 µm. 1997 Oct 30 7 Philips Semiconductors Product specification UHF power transistor BLV946 70 handbook, full pagewidth 70 70 70 KV9004 KV9005 C5 V bias C4 C14 C13 C10 C12 C6 C8 C7 L6 L5 C9 L3 L9 L8 C11 C15 VCC L7 R2 R1 L1 L2 L11 L4 C2 L10 C3 C16 L12 C17 C18 C1 MLD237 Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.8 Component layout and printed circuit board for 960 MHz class-AB test circuit. 1997 Oct 30 8 Philips Semiconductors Product specification UHF power transistor BLV946 MLD239 MLD238 10 10 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) xi 5 5 RL ri 0 0 5 5 XL 10 840 880 920 960 10 840 1000 f (MHz) VCE = 26 V; ICQ = 130 mA; PL = 40 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.9 880 960 920 1000 f (MHz) VCE = 26 V; ICQ = 130 mA; PL = 40 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Input impedance as a function of frequency (series components); typical values. Fig.10 Load impedance as a function of frequency (series components); typical values. MLD240 14 handbook, halfpage Gp (dB) 12 handbook, halfpage 10 Zi 8 6 820 ZL 880 940 1000 MBA451 1060 f (MHz) VCE = 26 V; ICQ = 130 mA; PL = 40 W; Th = 25 °C; Rth mb-h = 0.3 K/W. Fig.11 Power gain as a function of frequency; typical values. 1997 Oct 30 Fig.12 Definition of transistor impedance. 9 Philips Semiconductors Product specification UHF power transistor BLV946 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT273A D A F U1 B q C w2 M C H1 b1 c 5 H 3 1 E U2 6 A 4 2 w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c mm 7.45 7.27 2.42 1.80 3.18 2.92 0.16 0.10 inches 0.286 0.254 0.095 0.125 0.071 0.115 OUTLINE VERSION D e F H H1 p Q q U1 U2 w1 w2 w3 10.93 10.29 10.66 10.03 4.35 3.05 2.54 15.75 14.73 10.93 10.66 3.31 3.04 4.35 4.03 18.42 24.90 24.63 10.29 10.03 0.51 1.02 0.25 0.006 0.430 0.405 0.004 0.420 0.395 0.171 0.120 0.100 0.62 0.58 0.43 0.42 0.130 0.120 0.171 0.725 0.159 0.98 0.97 0.405 0.395 0.02 0.04 0.01 E REFERENCES IEC JEDEC EIAJ SOT273A 1997 Oct 30 EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF power transistor BLV946 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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