SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 / 2N4401 zFeatures 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403 / PN4403. zExternal dimensions (Unit : mm) 2.9±0.2 SST4401 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 (2) zPackage, marking, and packaging specifications Part No. Packaging type SST4401 MMST4401 2N4401 SST3 SMT3 TO-92 Marking Code Basic ordering unit (pieces) R2X R2X T116 T146 − T93 3000 3000 3000 0 to 0.1 2.4±0.2 +0.2 1.3−0.1 (1) 0.2Min. (3) (1) Emitter (2) Base (3) Collector All terminals have the same dimensions +0.1 0.15 −0.06 0.4 +0.1 −0.05 ROHM : SST3 MMST4401 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6+0.2 −0.1 (1) Unit 60 40 V V Emitter-base voltage Collector current VEBO IC 6 0.6 V A 0.2 W 0.35 W Collector power dissipation SST4401 MMST4401 SST4401 MMST4401 PC 4.8±0.2 (1) (2) (3) 0.45±0.1 5 ˚C (1) Emitter (2) Base (3) Collector +0.3 2.5 − 0.1 2.3 + + Tstg Storage temperature ∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE ROHM : TO-92 EIAJ : SC-43 ˚C 0.625 150 −55 to +150 Tj (1) Emitter (2) Base (3) Collector 3.7±0.2 0.5±0.1. 2N4401 Junction temperature 2N4401 0.15 −0.06 2.5Min. Limits VCBO VCEO 0.4 +0.1 −0.05 4.8±0.2 Symbol All terminals have the same +0.1 dimensions ROHM : SMT3 EIAJ : SC-59 (12.7Min.) Parameter Collector-base voltage Collector-emitter voltage 0.3 to 0.6 (3) zAbsolute maximum ratings (Ta=25°C) zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 60 − − 40 − − V V IC=100µA IC=1mA Emitter-base breakdown voltage BVEBO 6 − − − − 0.1 V ICBO µA IE=100µA VCB=35V IEBO − − 0.1 µA VEB=5V − − 0.4 − − 0.75 − − 0.95 − 20 − 1.2 − − 40 − − 80 − 100 − − 300 40 − − fT 250 − MHz Collector output capacitance Cob − − − 6.5 pF VCE=10V, IE= −20mA, f=100MHz VCB=10V, f=100kHz Emitter input capacitance Cib − − 30 pF VEB=0.5V, f=100kHz Delay time td − − 15 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA Rise time tr − − 20 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA tstg − − 225 ns VCC=30V, IC=150mA, IB1=-IB2=15mA tf − − 30 ns VCC=30V, IC=150mA, IB1=-IB2=15mA Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio Transition frequency Storage time Fall time hFE V V Conditions IC/IB=150mA/15mA IC/IB=500mA/50mA IC/IB=150mA/15mA IC/IB=500mA/50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA − VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA Rev.A 1/3 SST4401 / MMST4401 / 2N4401 Transistors zElectrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 1000 600 DC CURRENT GAIN : hFE 500 400 50 Ta=25°C VCE=10V 100 300 200 1V 100 IB=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.3 DC current gain vs. collector current(Ι) Fig.1 Grounded emitter output characteristics COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) 1.0 1000 Ta=25°C IC / IB=10 VCE=10V DC CURRENT GAIN : hFE 0.3 25°C 100 0.1 0 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 −55°C 10 0.1 Fig.2 Collector-emitter saturation voltage vs. collector current 1.0 AC CURRENT GAIN : hFE Ta=25°C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.4 DC current gain vs. collector current(ΙΙ) 1000 10 0.1 10 COLLECTOR CURRENT : Ic(mA) 100 Fig.5 AC current gain vs. collector current 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 0.2 Ta=125°C 1.8 1.6 Ta=25°C IC / IB=10 1.2 0.8 0.4 0 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.6 Base-emitter saturation voltage vs. collector current Rev.A 2/3 SST4401 / MMST4401 / 2N4401 1.6 1000 1.2 0.4 Ta=25°C VCC=30V IC / IB=10 100 100 0.8 VCC=30V 10V 10 1 10 100 COLLECTOR CURRENT : Ic(mA) 10 1.0 1000 Fig.7 Grounded emitter propagation characteristics 1000 100 Fig.8 Turn-on time vs. collector current 1000 10 100 COLLECTOR CURRENT : Ic(mA) 10 1.0 1000 100MHz 250MHz 300MHz 200MHz 10 1000 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 1000 1000 Fig.9 Rise time vs. collector current Ta=25°C f=1MHz Cib Cob 10 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.12 Input / output capacitance vs. voltage Fig.11 Fall time vs. collector current Fig.10 Storage time vs. collector current 100 10 100 COLLECTOR CURRENT : Ic(mA) 10 100 COLLECTOR CURRENT : Ic(mA) 100 Ta=25°C VCC=30V IC=10IB1=10IB2 100 10 1.0 5 1.0 1000 FALL TIME : tf(ns) STORAGE TIME : ts(ns) Ta=25°C VCC=30V IC=10IB1=10IB2 10 100 COLLECTOR CURRENT : Ic(mA) CAPACITANCE(pF) 0 COLLECTOR-EMITTER VOLTAGE : VCE(V) 500 Ta=25°C IC / IB=10 RISE TIME : tr(ns) Ta=25°C VCE=10V 1.8 TURN ON TIME : ton(ns) BASE EMITTER VOLTAGE : VBE(ON)(V) Transistors Ta=25°C VCE=10V 100 1 250MHz 0.1 1 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.13 Gain bandwidth product 10 1.0 10 100 COLLECTOR CURRENT : Ic(mA) 1000 Fig.14 Gain bandwidth product vs. collector current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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