2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 2SC4102 1.25 !Absolute maximum ratings (Ta=25°C) Junction temperature Storage temperature PC Tj Tstg 0.2 Unit V V V mA Limits 120 120 5 50 0.2 0.3 150 −55~+150 0~0.1 Symbol VCBO VCEO VEBO IC 0.15 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SC4102 / 2SC3906K dissipation 2SC2389S 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 W °C °C (1) Emitter (2) Base (3) Collector T∗ T106 3000 T∗ T146 3000 ∗Denotes h (2) 1.6 2.8 0.3Min. FE Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 2SC2389S 1.1 Marking Code Basic ordering unit (pieces) 2SC2389S SPT RS − TP 5000 0.8 2SC3906K SMT3 RS 0~0.1 2SC4102 UMT3 RS Type 0.15 Package hFE (3) 0.4 !Packaging specifications and hFE 0.95 0.95 1.9 2.9 (1) 2SC3906K (1) Emitter (2) Base (3) Collector 2 (15Min.) 3Min. 3 4 0.45 2.5 0.5 0.45 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 120 − − V IC=50µA Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage 120 − V IC=1mA BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=100V Emitter cutoff current IEBO − − 0.5 µA VEB=4V VCE(sat) − − 0.5 V IC/IB=10mA/1mA DC current transfer ratio hFE 180 − 560 − VCE=6V, IC=2mA Transition frequency fT − 140 − MHz Output capacitance Cob − 2.5 − pF Collector-emitter saturation voltage − VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0A, f=1MHz Taping specifications (1) Emitter (2) Collector (3) Base