EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A !External dimensions (Units : mm) (3) 0.22 (4) (5) (2) (6) 0.5 0.5 1.0 1.6 EMD6 (1) 1.2 1.6 0.5 0.13 !Features 1) Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 2.0 1.3 (3) (2) (1) 1.25 0.65 (6) (5) 0.2 (4) EMD6N 0.65 Abbreviated symbol : D6 !Structure A PNP and NPN digital transistor (each with a single built in resistor) 0.9 IMD6A DTr2 R1=4.7kΩ (1) 0.3to0.6 Abbreviated symbol : D6 Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector EMD6, UMD6N power dissipation IMD6A PC 150 (TOTAL) mW 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 !Absolute maximum ratings (Ta = 25°C) Parameter (1) 2.8 1.1 R1 (2) 0.8 (6) (3) 1.6 (3) 0.15 R1 (5) (2) (5) DTr1 DTr1 DTr2 0.95 0.95 1.9 2.9 (6) (4) (4) (5) R1 (1) 0to0.1 (3) (2) R1 (6) IMD6A 0.3 EMD6 / UMD6N (4) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D6 !Equivalent circuit R1=4.7kΩ 0.7 0.1Min. 0to0.1 The following characteristics apply to both the DTr1 and DTr2, however, the “ −” sign on DTr2 values for the PNP type have been omitted. 0.15 2.1 ∗1 ∗2 EMD6 / UMD6N / IMD6A Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Parameter Conditions Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=50V Emitter cutoff current IEBO − − 0.5 µA VEB=4V Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance VCE (sat) − − 0.3 V IC/IB=5mA/0.25mA hFE 100 250 600 − VCE=5V, IC=1mA fT − 250 − R1 3.29 4.7 6.11 MHz VCE=10mA, IE=−5mA, f=100MHz − kΩ ∗ Transition frequency of the transistor !Packaging specifications Package Type Taping Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 EMD6 UMD6N IMD6A 1k VCE=5V DC CURRENT GAIN : hFE 500 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) !Electrical characteristic curves DTr1 (NPN) Fig.1 DC current gain vs. collector current 1 lC/lB=20 500m 200m Ta=100˚C 25˚C −40˚C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 1k VCE=−5V DC CURRENT GAIN : hFE 500 50 −1 −500m −200m 200 100 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DTr2 (PNP) −100m Ta=100˚C 25˚C −40˚C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m lC/lB=20 Ta=100˚C 25˚C −40˚C −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.4 Collector-emitter saturation voltage vs. collector current ∗