2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 zExternal dimensions (Unit : mm) zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 0.75 0.8Min. 0.65 0.9 (1)Gate 2.3 (1) (2) (3) 2.3 0.5 1.0 (2)Drain (3)Source 9.5 1.5 0.5 Abbreviated symbol : K3050 zApplications Switching zPackaging specifications zInner circuit Package Taping Type Drain TL Code Basic ordering unit (pieces) 2500 2SK3050 Gate ∗1 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V Parameter Drain current Continuous ID Pulsed IDP Reverse drain current Continuous IDR Pulsed IDRP Source current (Body Diode) Continuous IS Pulsed ISP 2 A 6 A 2 A 6 A 2 A ∗1 6 A ∗1 ∗1 Avalanche Current IAS ∗2 2 A Avalanche Energy EAS ∗2 21 mJ Total power dissipation (Tc=25°C) PD 20 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Source ∗1 BODY DIODE ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 10mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 6.25 °C/W Rev.A 1/5 2SK3050 Transistors zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 600 − − V ID=1mA, VGS=0V Symbol Gate-source leakage Drain-source breakdown voltage Conditions IDSS − − 100 µA VDS=600V, VGS=0V Gate threshold voltage VGS(th) 2.0 − 4.0 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) ∗ − Forward transfer admittance | Yfs | Zero gate voltage drain current ∗ 4.4 5.5 Ω ID=1A, VGS=10V 0.5 1.0 − S ID=1A, VDS=10V 280 − pF VDS=10V − pF VGS=0V Input capacitance Ciss − Output capacitance Coss − 48 Reverse transfer capacitance Crss − Turn-on delay time td(on) tr Rise time td(off) Turn-off delay time tf Fall time Total gate charge Qg Gate-source charge Qgs Qgd Gate-drain charge 16 − pF f=1MHz ∗ − 12 − ns ID=1A, VDD 300V ∗ − 17 − ns VGS=10V ∗ − 29 − ns RL=300Ω ∗ − 105 − ns RG=10Ω ∗ − 12.8 25.6 nC VDD=300V ∗ − 3.3 − nC VGS=10V ∗ − 5.5 − nC ID=2A ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Reverse recovery time Reverse recovery charge Symbol VSD trr Qrr ∗ ∗ Min. − − − Typ. − 460 2.0 Max. 2.0 − − Unit V ns µC Conditions IS= 2A, VGS=0V IDR=2A, VGS=0V di/dt= 100A / µs ∗ Pulsed Rev.A 2/5 2SK3050 Transistors zElectrical characteristic curves 10 m s s 0m tion ra pe O 0.2 0.1 0.05 1.6 6V 1.2 0.8 5V 0.4 0 0 50 100 200 500 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 4 3 2 1 25 50 75 100 10 ID=2A 1A 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. channel temperature 6 7 8 9 0.2 0.1 0.02 0 10 20 25°C −25°C 10 5 2 1 2 3 4 5 6 0.05 0.1 0.2 0.5 1 2 5 7 6 ID=2A 5 75°C 125°C 0.2 0.1 0.05 2 1A 4 5 10 15 20 30 25 Fig.6 Static drain-source on-state resistance vs. gate-source voltage 0.5 1 Ta=25°C Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=−25°C 25°C 0.5 8 8 3 0 10 VDS=10V Pulsed 0.02 0.01 0.02 0.05 0.1 0.2 7 Fig.3 Typical transfer characteristics 9 Ta=125°C 75°C 2 1 GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static drain-source on-state resistance vs. drain current FORWARD TRANSFER ADMITTANCE : |YfS| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=10V Pulsed 0 5 1 DRAIN CURRENT : I D (A) Fig.4 Gate threshold voltage vs. channel temperature 0 −50 −25 4 50 CHANNEL TEMPERATURE : Tch (°C) 5 3 VGS=10V Pulsed 0.01 0.02 100 125 150 15 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 5 1 REVERSE DRAIN CURRENT : IDR (A) VDS=10V lD=1mA Ta= −25°C 25°C 75°C 125°C 0.05 Fig.2 Typical output characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) GATE THRESHOLD VOLTAGE : VGS(th) (V) 6 VDS=10V Pulsed 0.5 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Maximum safe operating area 0 5.5V 4.5V 0.02 Tc=25°C Single pulse 0.01 1 2 5 10 20 0 −50 −25 DRAIN CURRENT : ID (A) 10 VGS=10V 2 DRAIN CURRENT : ID (A) C D 0.5 ea ar ) is on th S( in RD n tio by ra d pe ite O lim is 0 =1 1 Ta=25°C Pulsed s 0µ s 10 1m 2 5 2.0 PW DRAIN CURRENT : ID (A) 5 5 10 DRAIN CURRENT : I D (A) Fig.8 Forward transfer admittance vs. drain current 5 VGS=0V Pulsed 2 1 0.5 Ta=125°C 75°C 25°C −25°C 0.2 0.1 0.05 0.02 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) Rev.A 3/5 2SK3050 Transistors 500 0V 1 0.5 0.2 200 100 Coss 50 20 Crss 10 Ta=25°C 0.1 5 VGS=0V f=1MHz 0.5 1.0 0.5 1.5 12 VGS 10 350V 300 100V VDD=100V 8 350V 200 6 400V 4 100 2 3 4 5 10 12 14 REVERSE RECOVERY TIME : trr (ns) VDS VDD=400V GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS (V) 14 400 2 200 tf 100 50 td(off) 10 20 50 100 200 tr 0.05 0.1 0.2 500 1000 td(on) 0.5 1 2 5 10 20 DRAIN CURRENT : ID (A) Fig.12 Switching characteristics 5000 Ta=25°C ID=2A Pulsed 0 0 5 Fig.11 Typical capacitance vs. drain-source voltage Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 500 10 2 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) 500 1 1000 20 2 Pulsed 0.05 0 Ta=25°C VDD=300V VGS=10V RG=10Ω Pulsed 2000 Ciss SWITCHING TIME : t (ns) VGS=10V 2 5000 1000 Ta=25°C Pulsed CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 5 Ta=25°C di/dt=100A/µs VGS=0V 2000 Pulsed 1000 0 16 500 200 100 50 0.05 0.1 0.2 TOTAL GATE CHARGE : Qg (nC) 0.5 1 2 5 10 REVERSE DRAIN CURRENT : IDR (A) Fig.14 Reverse recovery time vs. reverse drain current Fig.13 Dynamic input characteristics NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25°C θth(ch-c)(t)=r(t) · θth(ch-c) θth(ch-c)=6.25°C/W 0.01 0.001 10µ 0.01 Single pulse PW D=PW T T 100µ 1m 10m 100m 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized transient thermal resistance vs. pulse width Rev.A 4/5 2SK3050 Transistors zSwitching characteristics measurement circuit Pulse width VGS ID D.U.T. RG VDS RL VGS 90% 50% 10% 50% 10% VDS 10% VDD 90% 90% td(on) ton Fig.16 Switching time measurement circuit IG=2mA RG VGS ID D.U.T. tr td(off) tf toff Fig.17 Switching time waveforms VDS RL VDD Fig.18 Gate charge measurement circuit Rev.A 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1