PRELIMINARY LX5501 InGaP HBT 5.15-5.35 GHz Power Amplifier KEY FEATURES 5.15-5.35 GHz with simple input and output matching components. The LX5501 is available in 2mmx2mm micro-lead package (MLP). The compact footprint, low profile and excellent thermal capability, together with extremely small package parasitics, makes the LX5501 an ideal solution as the last-stage power amplifier for IEEE 802.11a or similar types of WLAN applications in the 5-6 GHz range. ! ! ! ! ! ! ! Advanced InGaP HBT 5.15-5.35 GHz Operation Single 3.3V Supply Power Gain > 11 dB P1dB > +22.5 dBm Small footprint: 2x2 MLP Low Profile: 0.9 mm APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS ! ! ! U-NII Band WLAN HyperLAN2 C-Band Medium Power Applications W W W. Microsemi .COM DESCRIPTION The LX5501 is a low voltage, high efficiency power amplifier optimized for the FCC-approved Unlicensed National Information Infrastructure (U-NII) band or HyperLAN2 applications in the 5.15-5.35 GHz frequency range. This is a singlestage power amplifier device manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). It operates at a single low voltage supply of 3.3V, and provides P1dB of over +22.5 dBm and gain of over 11 dB across ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF off………………….. 6 V Collector Current……………………………… 200 mA Total Power Dissipation……………………… 1.2 W RF Input Power………………………………. 15 dBm Operation Ambient Temperature…………… -40 to +85 oC Storage Temperature………………………… -60 to +150 oC IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com SPECIFICATION SPECIFICATION PACKAGE PIN OUT Vcc=3.3V, Icq=100mA, Ta=25°C Characteristic Condition Operation Frequency Range Output Power at 1-dB Compression Collector Current at P1dB 4 Symbol Min f 5.15 P1dB +22.5 Ic Power Added Efficiency at P1dB PAE Output 3rd Order Intermod Product OIP3 OFMD Linear Output Power 40 EVM=9% S21 Reverse Isolation S12 11 GHz dBm 110 mA 43 % +35 dBm +17 dBm TBD dB -18 dB 2:1 Output VSWR 2:1 Harmonics, 2nd 2f0 Noise Figure NF TBD θjc 120 No Oscillations Copyright 2002 Rev. B, 2002-01-04 Unit 5.35 TBD Input VSWR Thermal Resistance Stability (Load VSWR=3:1, All Phases) Max Pin= 15dBm -40 Microsemi Corporation 3 2 1 1: Base 2: GND 3: Collector 4: N/A 5: N/A LX5501 Small-Signal Gain Typical 5 dBc o C/W Page 1 PRELIMINARY LX5501 InGaP HBT 5.15-5.35 GHz Power Amplifier W W W. Microsemi .COM CHARACTERISTIC CURVES Typical S Parameter Data at Ta=25oC (Eval Board Optimized for 5.15-5.35 GHz Operation) Typical Power Swe Sweep ep Data at Ta=25oC (Eval Board Optimized for 5.15-5.35 GHz Operation) CHARTS Copyright 2002 Rev. B, 2002-01-04 Microsemi Corporation Page 2 PRELIMINARY LX5501 InGaP HBT 5.15-5.35 GHz Power Amplifier LM 5-Pin Plastic MLP-Micro Exposed Pad DIM K A A B C D F G I J K L M J B L M I C D F G MILLIMETERS MIN MAX 1.90 2.10 1.90 2.10 0.65 0.75 0.15 0.25 0.17 0.30 0.65 BSC 0 0.10 0.16 0.32 0 0.10 1.324 BSC 0.625 BSC INCHES MIN MAX 0.074 0.082 0.074 0.082 0.025 0.029 0.005 0.009 0.006 0.011 0.025 BSC 0 0.003 0.006 0.012 0 0.003 0.052 BSC 0.024 BSC W W W. Microsemi .COM PACKAGE DIMENSIONS Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Copyright 2002 Rev. B, 2002-01-04 Microsemi Corporation Page 3 PRELIMINARY LX5501 InGaP HBT 5.15-5.35 GHz Power Amplifier W W W. Microsemi .COM NOTES NOTES Copyright 2002 Rev. B, 2002-01-04 Microsemi Corporation Page 4