4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet FEATURES: • Small Package Size • High Linear Output Power: – 802.11a OFDM Spectrum mask compliance up to 23 dBm – Added EVM~2.5% up to 18 dBm, typically, across 5.1-5.8 GHz for 54 Mbps 802.11a signal • High Power-added Efficiency/Low Operating Current for 54 Mbps 802.11a Applications – ~11% @ POUT = 19 dBm for 54 Mbps • Gain: – Typically 26 dB gain across broadband 4.9-5.8 GHz • Low Idle Current – ~120 mA ICQ • High Speed Power-up/-down – Turn on/off time (10%~90%) <100 ns • Low Shut-down Current (<1 µA) • On-chip Power Detection • 20 dB Dynamic Range On-chip Power Detection • 50Ω On-chip Input Matching and Simple Output Matching • Packages Available – 12-contact UQFN (2mm x 2mm x 0.6mm max thickness) APPLICATIONS: • • • • WLAN (IEEE 802.11a/n) Japan WLAN HyperLAN2 Multimedia PRODUCT DESCRIPTION The SST11CP15 is a high-linearity power amplifier that has low power consumption and is based on the highly-reliable InGaP/GaAs HBT technology. The SST11CP15 can be easily configured for high-linearity, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.8 GHz). The SST11CP15 has excellent linearity, typically ~2.5% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 23 dBm. SST11CP15 also has wide-range, single-ended power detectors which lower users’ cost on power control. ©2011 Silicon Storage Technology, Inc. S71428-01-000 01/11 1 The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Low reference current (total IREF <5 mA) makes the SST11CP15 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11CP15 ideal for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applications. The SST11CP15 is offered in 12-contact UQFN package with 0.6 mm maximum thickness. See Figure 2 for pin assignments and Table 1 for pin descriptions. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet 2 VREF1 3 VCC2 VCC3 10 Input Match Bias Control Power Detection 4 5 6 DET VCCb 11 VREF3 1 12 VREF2 RFIN VCC1 FUNCTIONAL BLOCKS 9 GND 8 RFOUT 7 NC 1428 B1.0 FIGURE 1: Functional Block Diagram ©2011 Silicon Storage Technology, Inc. S71428-01-000 2 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet RFIN VCC1 VCC2 VCC3 PIN ASSIGNMENTS 12 11 10 1 9 GND 8 RFOUT 7 NC Top View (Contacts facing down) RF and DC GND 0 4 5 6 DET 3 VREF3 VREF1 2 VREF2 VCCb 1428 P1.0 FIGURE 2: Pin Assignments for 12-contact UQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol Pin No. GND 0 RFIN 1 VCCb 2 VREF1 VREF2 Pin Name Type1 Ground The center pad should be connected to RF ground with several low inductance, low resistance vias. I Power Supply Function RF input, DC decoupled PWR Supply voltage for bias circuit 3 PWR Current Control 4 PWR Current Control VREF3 5 PWR Current Control DET 6 O NC 7 RFOUT 8 No Connection On-chip power detector Unconnected pin O RF Output GND 9 Ground VCC3 10 Power Supply PWR Ground (NC is acceptable) Power supply, 3rd stage VCC2 11 Power Supply PWR Power supply, 2nd stage VCC1 12 Power Supply PWR Power supply, 1st stage T1.1 1428 1. I=Input, O=Output ©2011 Silicon Storage Technology, Inc. S71428-01-000 3 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 3 through 8 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 2, 10, 11, 12 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC Maximum Output Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dBm Surface Mount Solder Reflow Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds OPERATING RANGE Range Ambient Temp VCC Industrial -10°C to +85°C 3.3V TABLE 2: DC Electrical Characteristics Symbol Parameter VCC Supply Voltage at pins 2, 10, 11, 12 ICC Supply Current @ POUT = 18 dBm at VCC = 3.3V Min. 2.7 Typ Max. 3.3 4.2 Unit Notes V 210 mA ICQ VCC quiescent current 120 mA IOFF Shut down current <1.0 µA VREG Reference Voltage for recommended application 2.85 V T2.0 1428 TABLE 3: AC Electrical Characteristics for Configuration Symbol Parameter Min FL-U Frequency range 4.9 Linearity Typ Output power with 2.5% EVM at 54 Mbps OFDM signal when operating at 3.3V VCC 18 Output power level with 802.11a mask compliance across 4.9-5.8 GHz 23 G Linear gain across 4.9~5.8GHz Det Power detector output voltage range 2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors Max 5.8 GHz 20 dBm dBm 26 0.3 Unit dB 1.7 -40 V dBc T3.1 1428 ©2011 Silicon Storage Technology, Inc. S71428-01-000 4 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25°C, VREG = 2.85V unless otherwise noted EVM for 54 Mbps Operation EVM versus Output Power 10 9 8 Freq=4.9 GHz Freq=5.1 GHz Freq=5.5 GHz Freq=5.825 GHz EVM (%) 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1428 F4.1 FIGURE 3: EVM versus Output Power Supply Current (mA) Supply Current versus Output Power 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 Freq=4.9 GHz Freg=5.1 GHz Freq=5.5 GHz Freq=5.825 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1428 F5.1 FIGURE 4: Power Supply Current versus Output Power ©2011 Silicon Storage Technology, Inc. S71428-01-000 5 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet Power Gain (dB) Power Gain versus Output Power 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 Freq=4.9 GHz Freg=5.1 GHz Freq=5.5 GHz Freq=5.825 GHz 10 11 12 13 14 15 16 17 18 19 20 Output Power (dBm) 21 1428 F7.1 FIGURE 5: Power Gain versus Output Power Maximum Mask Compliance Spectrum Mask 802.11a (5500MHz) 0 -10 Amplitude(dB) -20 -30 Spectrum -40 Relative limit -50 -60 -70 -80 5.45 5.55 5.5 Frequency(GHz) 1428 F6.0 FIGURE 6: Frequency = 5.5 GHz at POUT = 23.3 dBm with ICC = 390 mA ©2011 Silicon Storage Technology, Inc. S71428-01-000 6 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet Detector Voltage versus Output Power 1.30 Detector Voltage (V) 1.20 1.10 Freq=4.9 GHz 1.00 Freq=5.5 GHz 0.90 Freq=5.5 GHz 0.80 Freq=5.825 GHz 0.70 0.60 0.50 0.40 0.30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1428 F8.1 FIGURE 7: Detector Voltage vs Output Power PAE versus Output Power 14 13 12 11 PAE (%) 10 9 8 Freq=4.9 GHz 7 Freg=5.1 GHz 6 Freq=5.5 GHz 5 Freq=5.825 GHz 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 1428 F9.1 FIGURE 8: PAE vs Output Power ©2011 Silicon Storage Technology, Inc. S71428-01-000 7 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet S12 versus Frequency 0 0 -5 -10 -10 -20 -15 -30 S12 (dB) S11 (dB) S11 versus Frequency -20 -25 -50 -30 -60 -35 -70 -40 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0.0 12.0 13.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Frequency (GHz) Frequency (GHz) S21 versus Frequency S22 versus Frequency 40 11.0 12.0 13.0 0 30 -5 20 -10 S22 (dB) S21 (dB) -40 10 0 -10 -20 -15 -20 -25 -30 -30 -35 -40 0.0 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) 1428 S-Parms.1.0 FIGURE 9: S-Parameters ©2011 Silicon Storage Technology, Inc. S71428-01-000 8 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet VCC 0.1 µF 0.1 µF 0.1 µF 12 11 4.7 µF 10 35 mil from the edge of the package 50Ω RFIN 9 1 11CP15 2X2 12L UQFN Top View 2 VCCb 0.1 pF 0.1 µF 50Ω 8 RFOUT 0.7 pF 7 3 0Ω 4 68Ω 5 6 105Ω Test Conditions VREG = 2.85V VCC=VCCb=3.3V DET 200 pF VREG 1428 F11.1 Note: The SST11CP15 has on-chip DC-blocking caps for RF ports FIGURE 10: Typical Application for High-Linearity 802.11a/n Application (VCC = 3.3V, VREG=2.85V) ©2011 Silicon Storage Technology, Inc. S71428-01-000 9 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet PRODUCT ORDERING INFORMATION SST11CP SSTXXCP 15 XX - QUB XX E X Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier B = 12 contact Package Type QU = UQFN Product Family Identifier Product Type P = Power Amplifier Voltage C = 3.0-5.0V Frequency of Operation 1 = 4.9-5.8 GHz Product Line 1 = SST Communications 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. Valid combinations for SST11CP15 SST11CP15-QUBE SST11CP15 Evaluation Kits SST11CP15-QUBE-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2011 Silicon Storage Technology, Inc. S71428-01-000 10 01/11 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet PACKAGING DIAGRAMS TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 2.00 0.05 Pin 1 (Laser Engraved) Pin 1 0.075 2.00 0.05 0.92 0.4 BSC 0.265 0.165 0.05 Max 0.60 0.50 0.25 0.15 0.34 0.24 1mm 12-uqfn-2x2-QUB-1.0 Note 1. Similar to JEDEC JEP95 UQFN/USON variants, though number of contacts and some dimensions are different. 2. From the bottom view, the pin 1 in dicator may be either a curved indent or a 45-degree chamfer. 3. The external paddle is electrically connected to the die back-side and to VSS. This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). FIGURE 11: 12-contact Ultra-thin Quad Flat No-lead (UQFN) SST Package Code: QUB TABLE 4: Revision History Revision 00 01 • • Description Date Initial Release of Data Sheet Updated Features on page 1; Table 2 on page 4; and Figures 3-5, 7,8, and 10. Jan 2011 Jul 2010 Silicon Storage Technology, Inc. www.SuperFlash.com or www.sst.com ©2011 Silicon Storage Technology, Inc. S71428-01-000 11 01/11