LX5506M InGaP HBT 4.5 – 6GHz Power Amplifier ® TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION of up to 20% at maximum linear output power for OFDM mask compliance. It also features an on-chip output power detector to help reduce BOM cost and board space in system implementation. The on-chip detector allows simple interface with an external directional coupler, providing accurate output power level readings insensitive to frequency, temperature, and load VSWR. LX5506M is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506M an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and HyperLAN2 portable WLAN applications. Broadband 4.9-5.9GHz Operation Advanced InGaP HBT Single-Polarity 3.3V Supply Power Gain ~ 30dB at 5.25GHz Power Gain > ~28dB Across 4.95.9GHz EVM ~ -30dB at Pout=+17dBm at 5.25GHz EVM ~ -30dB at Pout=+18dBm at 5.85GHz Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Duty Cycle of 90%) Maximum Linear Power ~ +22dBm for OFDM Mask Compliance Maximum Linear Efficiency ~ 20% On-chip Output Power Detector with Improved Frequency and LoadVSWR Insensitivity On-Chip Input Match On-Chip RF Decoupling Simple Output Match for Optimal Broadband EVM 2 Small Footprint: 3x3mm Low Profile: 0.9mm WWW . Microsemi .C OM The LX5506M is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2, and Japan’s WLAN applications in the 4.9-5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with up to +22dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of -30dB for up to +18dBm output power in the 4.9-5.9GHz band. LX5506M features high gain of up to 30dB with low quiescent current of 90mA, and high power added efficiency APPLICATIONS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FCC U-NII Wireless IEEE 802.11a HyperLAN2 5GHz Cordless Phone PRODUCT HIGHLIGHT LX5506M PACKAGE ORDER INFO TJ (°C) LQ Plastic MLPQ 16 pin RoHS Compliant / Pb-free 0 to 70 LX5506MLQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5506MLQ-TR) Copyright © 2005 Rev. 1.0a, 2005-11-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 TM ® Thank you for your interest in Microsemi® IPG products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or Contact us directly by sending an email to: [email protected] Be sure to specify the data sheet you are requesting and include your company name and contact information and or vcard. We look forward to hearing from you. Copyright Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 WWW . Microsemi .C OM INFORMATION