PHILIPS SA3600

INTEGRATED CIRCUITS
SA3600
Low voltage dual-band RF front-end
Product specification
Supersedes data of 1999 March 18
1999 Nov 02
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
DESCRIPTION
APPLICATIONS
• 800 to 1000 MHz analog and digital receivers
• 1800 to 2000 MHz digital receivers
• Portable radios
• Mobile communications equipment
The SA3600 is an integrated dual-band RF front-end that operates at
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and
is designed in a 20 GHz fT BiCMOS process—QUBiC2.
The low-band (LB) receiver is a combined low-noise amplifier (LNA)
and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with
17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer
has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of
+6 dBm.
PIN CONFIGURATION
The high-band (HB) receiver is a combined low-noise amplifier (LNA)
and mixer, with the low-band and high-band mixers sharing the same
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5
dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
24 LB_LNA_OUT
HB_LNA_OUT 1
GND 2
23 GND
HB_LNA_IN 3
22 LB_LNA_IN
VCC 4
FEATURES
• Low current consumption: LB ICC = 14.5 mA; HB ICC = 20.5 mA
• Outstanding low- and high-band noise figure
• LNAs with gain control (30 dB gain step)
• LO input and output buffers
• Selectable frequency doubler
• On chip logic for network selection and power down
• Very small outline package
21 VCC
HB_MXR+_IN 5
20 LB_MXR_IN
HB_MXR–_IN 6
19 GND
PD1 7
18 MXR+_OUT
GND 8
17 MXR–_OUT
HB_VCO_OUT 9
16 GND
PD2 10
15 LB_VCO_IN
14 PD3
GND 11
LB_VCO_OUT 12
13 HB_VCO_IN
SR01596
ORDERING INFORMATION
TYPE NUMBER
SA3600
PACKAGE
NAME
DESCRIPTION
VERSION
TSSOP24
Plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355–1
PIN DESCRIPTIONS
PIN
NO.
PIN NAME
PIN
NO.
DESCRIPTION
PIN NAME
DESCRIPTION
1
HB_LNA_OUT
Highband LNA output
13
HB_VCO_IN
Highband VCO input
2
GND
Ground
14
PD3
Power down control 3
3
HB_LNA_IN
Highband LNA input
15
LB_VCO_IN
Lowband VCO input
4
Vcc
Power supply
16
GND
Ground
5
HB_MXR+_IN
Highband mixer positive input
17
MXR–_OUT
Mixer negative output
6
HB_MXR–_IN
Highband mixer negative input
18
MXR+_OUT
Mixer positive output
7
PD1
Power down control 1
19
GND
Ground
8
GND
Ground
20
LB_MXR_IN
Lowband mixer input
9
HB_VCO_OUT
Highband VCO buffered output
21
VCC
Power supply
10
PD2
Power down control 2
22
LB_LNA_IN
Lowband LNA input
11
GND
Ground
23
GND
Ground
12
LB_VCO_OUT
Lowband VCO buffered output
24
LB_LNA_OUT
Lowband LNA output
1999 Nov 02
2
853–2183 22617
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
BLOCK DIAGRAM
HB_LNA_OUT
1
24 LB_LNA_OUT
GND
2
23 GND
HB_LNA_IN
3
22 LB_LNA_IN
VCC
4
HB_MXR+_IN
5
20 LB_MXR_IN
HB_MXR–_IN
6
19 GND
PD1
7
18 MXR+_OUT
GND
8
17 MXR–_OUT
HB_VCO_OUT
9
16
21 VCC
SA3600
PD2 10
GND
15 LB_VCO_IN
GND 11
14 PD3
x2
LB_VCO_OUT 12
13 HB_VCO_IN
SR01594
Figure 1.
Block Diagram
MODE SELECT LOGIC
Cel
LNA
Cel
MXR
PCS
LNA
PCS
MXR
x2
DBL
Sleep mode
off
off
off
off
Tx mode, LO lowband buffer
off
off
off
off
Rx mode cellular, low gain
off
on
off
Rx mode cellular, high gain
on
on
off
0
Rx mode PCS, low gain, x2
off
off
0
1
Rx mode PCS, high gain, x2
off
1
0
Rx mode PCS, low gain, no x2
off
1
1
Rx mode PCS, high gain, no x2
off
PD1
PD2
PD3
0
0
0
0
0
1
0
1
0
0
1
1
1
0
1
1
1
1999 Nov 02
OPERATING MODE
3
LB LO
O/P
HB LO
O/P
off
off
off
off
on
off
off
off
on
off
off
off
on
off
off
on
on
on
off
off
on
on
on
on
off
off
off
on
off
off
on
off
on
on
off
off
on
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
OPERATION
The SA3600 is a highly integrated dual-band radio frequency (RF)
front-end integrated circuit (IC) targeted for TDMA applications. This
IC is split into separate low-band (LB) and high-band (HB) receivers.
The LB receiver contains a low noise amplifier (LNA) and mixer that
are designed to operate in the cellular frequency range
(869–894MHz). The HB receiver contains an LNA and mixer that
are designed to operate in the PCS frequency range
(1930–1990 MHz). The SA3600 also contains a frequency doubler
that can drive the HB mixer local oscillator (LO) port, allowing a
single-band voltage controlled oscillator (VCO) to be used to drive
both mixers. Modes for bypassing the doubler are also provided, in
the case where a dual-band VCO is used.
High-Band Receive Section
The HB circuit contains a LNA followed by a Gilbert cell mixer with
differential inputs. The LNA output uses an internal pull-up inductor
to VCC , which eliminates the need for an external pull-up. The
mixer IF outputs are differential and are combined with the low-band
IF mixer outputs thereby eliminating the need for extra output pins.
Similar to the LB LNA, the HB LNA has two gain settings: high gain
(16 dB) and low gain (–15 dB).
Control Logic Section
Pins PD1, PD2, and PD3, control the logic functions of the SA3600.
The PD1 selects between LB and HB operations. In LB receive
mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are
(0,1,1). In all other modes, the LB LNA is off. The LB mixer is on
when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off.
During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is
on, enabling use of the LO signal for the transmitter.
The SA3600 has eight modes of operation that control the LNAs,
mixers, LO buffers and doubler. The select pins (PD1,2,3) are used
to change modes of operation. The internal select logic powers the
device down (0,0,0), turns on the LB LO buffer for use in transmit
mode (0,0,1), enables cellular receive mode for high and low gain
(0,1,X), enables PCS receive mode for high and low gain both
without doubler (1,1,X) and with doubler (1,0,X).
In HB receive mode, the HB LNA is in high gain mode (or on) when
PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB
mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes.
The on-chip frequency doubler (X2) is on in (1,0,X) modes. When
the frequency doubler is on, the input signal from the LB LO buffer is
doubled in frequency, which can then be used to drive the HB mixer
LO port. The frequency doubler can also be bypassed in modes
(1,1,X), in which case the HB mixer is driven directly by an external
2 GHz LO signal.
Low-Band Receive Section
The LB circuit contains a LNA followed by a wide dynamic range
active mixer. In a typical application circuit, the LNA output uses an
external pull-up inductor to VCC and is AC coupled. The mixer IF
outputs are differential and are combined with the high-band IF
mixer outputs thereby eliminating the need for extra output pins.
External inductors and capacitors can be used to convert the
differential mixer outputs to single-ended. Furthermore, the LNA
provides two gain settings: high gain (17dB) and low gain (–15 dB).
The desired gain state can be selected by setting the logic pins
(PD1,PD2,PD3) appropriately.
1999 Nov 02
Local Oscillator (LO) Section
The LB LO buffers are on for all modes except sleep mode, when
PD1,2,3 are (0,0,0), and for HB receive mode without doubler,
PD1,2,3 are (1,1,X). The HB LO buffers are on only when PD1,2,3
are (1,1,X). The PD1,2,3 pins are used to power-up/down all LO
input buffers, which minimizes the pulling effect on the external VCO
when entering receive or transmit mode.
4
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
ABSOLUTE MAXIMUM RATINGS1
SYMBOL
LIMITS
PARAMETER
MIN.
MAX.
UNITS
VCC
Supply voltage
–0.3
+4.5
V
VIN
Voltage applied to any other pin
–0.3
VCC+0.3
V
PD
Power dissipation, Tamb = +25 °C (still air)
555
mW
TJ MAX
Maximum junction temperature
150
°C
PMAX
Power input/output
+20
dBm
IMAX
DC current into any I/O pin
–10
+10
mA
TSTG
Storage temperature range
–65
+150
°C
–40
+85
°C
TO
Operating temperature
NOTES:
1. IC is protected against ESD voltages up to 500 V (human body model).
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
VCC = +3.0 V, Tamb = +25°C unless otherwise specified
SYMBOL
ICC
PARAMETER
PD2
PD3
Sleep mode
0
0
0
Tx mode, LO lowband buffer
0
0
Rx mode cellular, low gain
0
1
Rx mode cellular, high gain
0
1
Rx mode PCS, low gain, x2
1
0
Rx mode PCS, high gain, x2
1
Rx mode PCS, low gain, no x2
Rx mode PCS, high gain, no x2
VIH
Input HIGH voltage
VIL
Input LOW voltage
IBIAS
Input bias current
1999 Nov 02
TEST CONDITIONS
PD1
TESTER LIMITS
UNIT
TYP
MAX
0.1
1
µA
1
4.3
5.5
mA
0
10.1
12
mA
1
14
16.5
mA
0
17.5
21
mA
0
1
23.5
28
mA
1
1
0
14.5
17.5
mA
1
1
1
20.5
24.5
mA
0.5xVCC
VCC+0.3
V
–0.3
0.2xVCC
V
–5
+5
µA
Logic 1 or logic 0
5
MIN
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0 V, fRF = 881 MHz, fLO = 963 MHz, Tamb = +25°C, unless otherwise specified
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN.
–3 σ
TYP
+3 σ
MAX.
UNIT
Cascaded Gain Section
GSYS
LB LNA + Mixer, High Gain
Filter loss = 3 dB
20.5
23.5
26.5
dB
GBYP
LB LNA + Mixer, Low Gain
Filter loss = 3 dB
–11.5
–8.5
–5.5
dB
894
MHz
Low-band LNA Section
fRF
RF input frequency range
869
GENA
Small signal gain ENABLED
16.1
17
17.9
dB
NFENA
Noise figure ENABLED
1.5
1.7
1.9
dB
–8.1
–7
–5.9
dBm
IIP3ENA
Input 3rd order Intercept Point
P1dBENA
Input 1 dB Compression Point
–20
dBm
GBYP
Small signal gain BYPASSED
–15
dB
NFBYP
Noise figure BYPASSED
15
dB
IIP3BYP
Input 3rd order Intercept Point
15
dBm
50 Ω system
10
dB
50 Ω system
10
ZIN
Input return loss2
loss2
ZOUT
Output return
TSW
ENABLE/DISABLE speed1
dB
20
µs
Low-band Mixer Section
fRF
RF input frequency range
869
894
MHz
fIF
IF output frequency range
70
200
MHz
fLO
LO input range
939
1100
MHz
GMXR
Small signal gain
PLO = –5 dBm
9
9.5
10
NFMXR
SSB Noise figure
PLO = –5 dBm
8.6
9.5
10.4
dB
IIP3MXR
Input 3rd order Intercept Point
PLO = –5 dBm
5.1
6
6.9
dBm
P1dBMXR
Input 1 dB Compression Point
PLO = –5 dBm
PLO
LO input power range
ZIN
Input return loss2
ZOUT
Output return
loss2
Two-tone spurious rejection:
2-Tone
–14
–7
dBm
–5
–3
dBm
50 Ω system
10
dB
50 Ω system
10
dB
PLO = –5 dBm
2(fRF–fTx), fRF–fTx=fIF/2
fRF=890.0 MHz @–36 dBm
fTx=848.9 MHz @–20 dBm
–110
3(fRF–fTx), fRF–fTx=fIF/3
fRF=876.3 MHz @–36 dBm
fTx=848.9 MHz @–20 dBm
–110
RF–LO
RF to LO isolation
25
LO–RF
LO to RF isolation
40
TSW
dB
dBm
dB
dB
ENABLE/DISABLE speed1
20
µs
1100
MHz
–3
dBm
Low-band LO Buffer Section
PLO
LO Input frequency range
PIN
LO Input power
POUT
ZIN
ZOUT
TSW
1999 Nov 02
LO Output power
939
50 Ω matched LB_VCO_IN
50 Ω matched LB_VCO_OUT
–7
–5
–8
–7.5
–7
dBm
50 Ω system
10
Output return loss2
50 Ω system
10
dB
Harmonic content
PLO = –5 dBm
–20
dBc
Input return
loss2
ENABLE/DISABLE speed1
dB
20
6
µs
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0 V, fRF = 1960 MHz, fLO = 2042 MHz, Tamb = +25°C, unless otherwise specified
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN.
–3 σ
TYP
+3 σ
MAX.
UNIT
Cascaded Gain Section
GSYS
HB LNA + Mixer, High Gain
Filter loss = 3 dB
18.5
21.5
24.5
dB
GBYP
HB LNA + Mixer, Low Gain
Filter loss = 3 dB
–12.5
–9.5
–6.5
dB
1990
MHz
High-band LNA Section
fRF
RF input frequency range
GENA
Small signal gain ENABLED
1930
15
16
17
dB
NFENA
Noise figure ENABLED
1.9
2.2
2.5
dB
IIP3ENA
Input 3rd order Intercept Point
–6.5
–5
–3.5
dBm
P1dBENA
Input 1 dB Compression Point
–14
dBm
GBYP
Small signal gain BYPASSED
–15
dB
NFBYP
Noise figure BYPASSED
15
dB
IIP3BYP
Input 3rd order Intercept Point
15
dBm
ZIN
Input return loss2
50 Ω system, ENA and BYP
10
dB
ZOUT
Output return loss
50 Ω system, ENA and BYP
10
dB
TSW
ENABLE/DISABLE
20
µs
1990
MHz
70
200
MHz
2000
2190
MHz
speed1
High-band Mixer Section
fRF
RF input frequency range
fIF
IF output frequency range
fLO
LO input range
GMXR
NFMXR
IIP3MXR
P1dBMXR
IF/2 rej
rej.
IF/3 rej.
Small signal gain
PLO = –5 dBm
7.8
8.5
9.2
dB
SSB Noise figure, doubler off
PLO = –5 dBm
7.6
8.5
9.4
dB
SSB Noise figure, doubler on
PLO = –5 dBm
8.1
9
9.9
dB
Input 3rd order Intercept Point, doubler off
PLO = –5 dBm
4
5.5
7
dBm
Input 3rd order Intercept Point, doubler on
PLO = –5 dBm
1.9
3
4.1
dBm
Input 1 dB Compression Point
PLO = –5 dBm
Half-IF spurious rejection
2(fRF–fLO), fRF–fLO=fIF/2, doubler off
Half-IF spurious rejection
2(fRF–fLO), fRF–fLO=fIF/2, doubler on
Third-IF spurious rejection
3(fRF–fLO), fRF–fLO=fIF/3
Two-tone spurious rejection:
2-tone
PLO
ZIN
dBm
–90
fRF=1972.0 MHz @–36 dBm
fLO=2013.1 MHz @–5 dBm
dBm
–85
fRF=1985.7 MHz @–36 dBm
fLO=2013.1 MHz @–5 dBm
–114
dBm
PLO = –5 dBm,
fRF=1933.0 MHz @–36 dBm
fTx=1850.8 MHz @–20 dBm
–70
2(fRF–fTx), fRF–fTx=fIF/2
fRF=1951.0 MHz @–36 dBm
fTx=1909.9 MHz @–20 dBm
–115
3(fRF–fTx), fRF–fTx=fIF/3
fRF=1937.3 MHz @–36 dBm
fTx=1909.9 MHz @–20 dBm
–125
LO input power range
–7
–5
dBm
–3
dBm
50 Ω system
10
dB
50 Ω system
10
dB
RF to LO isolation
40
dB
LO to RF isolation
30
Input return
loss2
Output return loss2
RF–LO
LO–RF
1999 Nov 02
–14
fRF–fTx, fRF–fTx=fIF
ZOUT
TSW
1930
ENABLE/DISABLE speed1
dB
20
7
µs
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0 V, Tamb= +25°C, unless otherwise specified
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN.
–3 σ
TYP
+3 σ
MAX.
UNITS
High-band LO Buffer Section
PLO
LO Input frequency range
PIN
LO Input power
2000
50 Ω matched HB_VCO_IN
–7
–5
2190
MHz
–3
dBm
POUT
LO Output power
50 Ω matched HB_VCO_OUT
ZIN
Input return loss2
50 Ω system
10
dB
Output return loss2
50 Ω system
10
dB
Harmonic content
PLO = –5 dBm
–20
ZOUT
TSW
–8.8
–8
ENABLE/DISABLE speed1
–7.2
dBm
dBc
20
µs
1095
MHz
–3
dBm
x2 LO Doubler Section
fLO
LO Input frequency
PIN
LO Input power
ZIN
Input return
loss2
ZOUT
Output return loss2
TSW
ENABLE/DISABLE speed1
1000
50 Ω matched LB_VCO_IN
–5
50 Ω system
10
50 Ω system
10
dB
dB
20
NOTES:
1. Dependent on external components.
2. External matching required.
1999 Nov 02
–7
8
µs
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
PIN NO
PIN MNEMONIC
SA3600
DC V
EQUIVALENT CIRCUIT
VCC
1
HB LNA OUT
SR01786
VBIAS
5K
3
HB LNA IN
0.8
SR01787
VCC
4
VCC
5
HB MXR+ IN
1.2
6
HB MXR– IN
1.2
VBIAS
SR01788
7
PD1
10
PD2
14
PD3
Apply externally
SR01789
VCC
VCC
9
HB VCO OUT
Pull-up externally to VCC
SR01790
1999 Nov 02
9
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
PIN NO
PIN MNEMONIC
SA3600
DC V
EQUIVALENT CIRCUIT
VCC
12
LB VCO OUT
VCC – 0.2 V
SR01791
VCC
13
HB VCO IN
VBIAS
VBIAS
1.9
SR01792
VCC
15
LB VCO IN
1.0
SR01793
VCC
2 pF
17
MXR– OUT
VCC
Pull-up externally to VCC
Pull-u
18
2 pF
MXR+ OUT
SR01794
1999 Nov 02
10
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
PIN NO
PIN MNEMONIC
SA3600
DC V
EQUIVALENT CIRCUIT
VCC
20
LB MXR IN
VBIAS
1.2
SR01795
VCC
VBIAS
5K
22
LB LNA IN
0.8
SR01796
VCC
24
LB LNA OUT
Pull-up externally to VCC
SR01797
1999 Nov 02
11
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
PERFORMANCE CHARACTERISTICS
VCC = +3.0 V, Tamb = +25_C; unless otherwise specified.
16.0
0.20
15.0
+85° C
+85° C
+25° C
14.0
Icc (mA)
Icc (uA)
0.15
0.10
–40° C
+25° C
13.0
–40° C
12.0
0.05
11.0
00.0
2.5
2.5
3.0
3.5
3.0
3.5
4.0
4.0
VCC (V)
VCC (V)
SR02204
SR02201
Figure 5.
ICC versus VCC (mode 000 – sleep mode)
5.0
19.0
4.8
18.5
4.6
18.0
Icc (mA)
Icc (mA)
Figure 2.
4.4
+85° C
17.5
+85° C,
+25° C
17.0
4.2
ICC versus VCC (mode 011 – LB receive, high gain)
+25° C
–40° C
–40° C
4.0
2.5
16.5
3.0
3.5
2.5
4.0
3.0
VCC (V)
3.5
VCC (V)
SR02205
SR02202
Figure 3.
4.0
Figure 6.
ICC versus VCC (mode 001 – transmit mode)
ICC versus VCC (mode 100 – HB receive, low gain,
doubler on)
26.5
11.0
Icc (mA)
Icc (mA)
25.0
10.5
–40° C,
+25° C
10.0
+85° C
23.5
+25° C
22.0
–40° C
+85° C
20.5
9.5
2.5
3.0
3.5
2.5
4.0
VCC (V)
1999 Nov 02
3.5
4.0
VCC (V)
SR02203
Figure 4.
3.0
SR02206
Figure 7.
ICC versus VCC (mode 010 – LB receive, low gain)
12
ICC versus VCC (mode 101 – HB receive, high gain,
doubler on)
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
–13.0
16.0
–14.0
–40° C
Low gain (dB)
Icc (mA)
15.5
15.0
+85° C
14.5
–15.0
+25° C
–16.0
+85° C
–17.0
–40° C
+25° C
–18.0
14.0
2.5
3.0
3.5
865
4.0
870
875
VCC (V)
880
885
890
895
Frequency (MHz)
SR02207
Figure 8.
SR02210
ICC versus VCC (mode 110 – HB receive, low gain,
doubler off)
Figure 11.
LB LNA low gain versus frequency
3.0
24.0
2.5
22.0
+85° C
NF (dB)
Icc (mA)
900
+25° C
20.0
–40° C
18.0
+85° C
2.0
+25° C
–40° C
1.5
16.0
1.0
2.5
3.0
3.5
865
4.0
870
875
880
885
890
895
VCC (V)
SR02208
Figure 9.
900
Frequency (MHz)
SR02211
ICC versus VCC (mode 111 – HB receive, high gain,
doubler off)
Figure 12.
LB LNA noise figure versus frequency
(high gain mode)
–4.0
18.0
–40° C
IIP3 (dBm)
Gain (dB)
17.5
17.0
+25° C
–6.0
+85° C
+25° C
–8.0
16.5
–40° C
+85° C
16.0
–10.0
865
870
875
880
885
890
895
865
900
870
875
880
885
890
895
Frequency (MHz)
SR02212
SR02209
Figure 10.
1999 Nov 02
900
Frequency (MHz)
LB LNA gain versus frequency
Figure 13.
13
LB LNA IIP3 versus frequency
(high gain mode)
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
–12.0
–18.0
Low gain (dB)
–13.0
1 dB (dBm)
–19.0
+25° C
+85° C
–20.0
–40° C
–40° C
–14.0
+25° C
–15.0
–16.0
+85° C
–17.0
–21.0
–18.0
–22.0
1920
865
870
875
880
885
890
895
1940
1950
1960
1970
1980
1990
2000
Frequency (MHz)
Frequency (MHz)
Figure 14.
1930
900
SR02213
SR02216
LB LNA 1 dB compression versus frequency
(high gain mode)
Figure 17.
HB LNA low gain versus frequency
–11.0
3.0
+85° C
+85° C
–13.0
2.5
+25° C
–14.0
IIP3 (dBm)
1 dB (dBm)
–12.0
+25° C
–15.0
2.0
–40° C
–40° C
1.5
–16.0
1.0
–17.0
1920
1930
1940
1950
1960
1970
1980
1990
1920
2000
1930
1940
Frequency (MHz)
1960
1970
1980
1990
Frequency (MHz)
SR02214
Figure 15.
1950
HB LNA 1 dB compression versus frequency
(high gain mode)
Figure 18.
2000
SR02217
HB LNA noise figure versus frequency
(high gain mode)
17.0
0.0
–40° C
–2.0
+85° C
+25° C
IIP3 (dBm)
Gain (dB)
16.5
16.0
+85° C
15.5
–4.0
+25° C
–6.0
–40° C
–8.0
15.0
1920
1930
1940
1950
1960
1970
1980
Frequency (MHz)
Figure 16.
1999 Nov 02
1990
–10.0
2000
1920
1930
1940
1950
1960
1970
1980
1990
2000
Frequency (MHz)
SR02215
SR02218
HB LNA gain versus frequency
Figure 19.
14
HB LNA IIP3 versus frequency
(high gain mode)
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
11.0
–12.0
–40° C
–40° C
–13.0
1 dB (dBm)
Gain (dB)
10.0
+25° C
9.0
+85° C
+25° C
+85° C
–14.0
–15.0
8.0
–16.0
7.0
865
870
875
880
885
890
895
900
865
870
875
Frequency (MHz)
880
885
890
895
SR02219
Figure 20.
SR02222
LB mixer conversion gain versus frequency
Figure 23.
LB mixer 1 dB compression versus frequency
10.0
12.0
–40° C
11.0
9.0
+85° C
10.0
Gain (dB)
NF (dB)
900
Frequency (MHz)
+25° C
9.0
–40° C
+25° C
8.0
+85° C
7.0
8.0
6.0
7.0
865
870
875
880
885
890
895
1920
900
1930
1940
1950
1960
1970
1980
SR02220
Figure 21.
1990 2000
Frequency (MHz)
Frequency (MHz)
SR02224
LB mixer noise figure versus frequency
Figure 24.
HB mixer conversion gain versus frequency,
doubler off
11.0
10.0
–40° C
10.0
+85° C
+25° C
6.0
NF (dB)
IIP3 (dBm)
8.0
4.0
+25° C
9.0
–40° C
8.0
+85° C
2.0
7.0
0.0
865
870
875
880
885
890
895
1920
900
1950
1960
1970
1980
1990
2000
SR02225
SR02221
1999 Nov 02
1940
Frequency (MHz)
Frequency (MHz)
Figure 22.
1930
LB mixer input IP3 versus frequency
Figure 25.
15
HB mixer noise figure versus frequency,
doubler off
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
–82.0
10.0
–40° C
Half–IF Spur (dBm)
8.0
IIP3 (dBm)
+25° C
6.0
+85° C
4.0
–40° C
–84.0
+25° C
–86.0
+85° C
–88.0
2.0
–90.0
0.0
1920
1930
1940
1950
1960
1970
1980
1920
1990 2000
1930
1940
1950
1960
1970
1980
Frequency (MHz)
Frequency (MHz)
SR02228
SR02226
Figure 26.
HB mixer input IP3 versus frequency,
doubler off
Figure 29.
–13.0
HB mixer half-IF spur versus frequency
(input = –36 dBm, doubler on)
10.0
–40° C
–13.5
9.0
–40° C
–14.0
Gain (dB)
1 dB (dBm)
1990 2000
+25° C
+85° C
–14.5
+25° C
8.0
+85° C
7.0
–15.0
6.0
1920
1930
1940
1950
1960
1970
1980
1990
2000
1920
1930
1940
Frequency (MHz)
1950
1960
1970
1980
SR02227
Figure 27.
HB mixer 1 dB compression versus frequency,
doubler off
Figure 30.
+25° C
–90.0
–92.0
+85° C
11.0
–40° C
NF (dB)
Half–IF spur (dBm)
HB mixer conversion gain versus frequency,
doubler on
12.0
–88.0
+85° C
–94.0
10.0
+25° C
9.0
–40° C
8.0
–96.0
7.0
1930
1940
1950
1960
1970
1980
1990
1920
2000
Frequency (MHz)
Figure 28.
1930
1940
1950
1960
1970
1980
1990
2000
Frequency (MHz)
SR02223
1999 Nov 02
2000
SR02229
–86.0
1920
1990
Frequency (MHz)
SR02230
HB mixer half-IF spur versus frequency
(input = –36 dBm, doubler off)
Figure 31.
16
HB mixer noise figure versus frequency,
doubler on
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
6.0
–5.0
Lo output power (dBm)
5.0
+85° C
IIP3 (dBm)
4.0
+25° C
3.0
2.0
1.0
–6.0
–40° C
–7.0
+25° C
–8.0
+85° C
–9.0
–40° C
0.0
1920
1930
1940
1950
1960
1970
1980
1990
–10.0
2000
950
955
960
965
970
975
980
Frequency (MHz)
Frequency (MHz)
SR02231
Figure 32.
HB mixer input IP3 versus frequency,
doubler on
Figure 34.
30.0
LB LO output power versus frequency (mode 010)
–6.0
LO output power (dBm)
+25° C
IIP2 (dBm)
SR02233
28.0
+85° C
26.0
–40° C
24.0
–7.0
–40° C
–8.0
+25° C
–9.0
+85° C
–10.0
–11.0
1920
1930
1940
1950
1960
1970
1980
1990
2000
2010
2020
2030
2040
2050
2060
2070
2080
Frequency (MHz)
Frequency (MHz)
SR02232
Figure 33.
1999 Nov 02
HB mixer input IP2 versus frequency,
doubler on
Figure 35.
17
SR02234
HB LO output power versus frequency
(mode 110)
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
PMU
PMU
10 kΩ
220 pF
10 nh
HB_LNA_OUT
GND
PMU
RF
Source
220 pF
1
24
2
23
3
22
220 pF
LB_LNA_OUT
12 nh
GND
10 kΩ
10 kΩ
220 pF
1.8 pF
PMU
HB_LNA_IN
LB_LNA_IN
RF Source
6.8 pF
5.6 nh
VCC
4
PMU
0.01 µF
3 dB Pad
21
100 pF
5
PMU
20
10 kΩ
HB_MXR–_IN
1 kΩ
PD1
PMU
6
19
7
18
8
17
HB_VCO_OUT
9
16
PMU
0.01 µF
RF Meas.
8.2 pF
RF Meas.
100 pF
470 nh
470 nh
MXR–_OUT
10 nh
100 pF
10 nh
MXR+_OUT
8.2 pF
GND
220 pF
PMU
GND
0.1 pF
PMU
18 nh
LB_MXR_IN
100 pF
220 pF
PMU
0.01 µF
100 pF
HB_MXR+_IN
10 kΩ
3 dB Pad
VCC
10 pF
GND
10 kΩ
PMU
1 kΩ
PD2
PMU
10
15
LB_VCO_IN
RF Source
0.1 µF
18 pF
GND
10 kΩ
11
14
4.7 nh
PMU
0.1 µF
PMU
LB_VCO_OUT
RF Meas.
1k
PD3
12
13
HB_VCO_IN
2.7 pF
RF Source
100 pF
PMU
4.7 nh
10 kΩ
SR02235
Figure 36.
1999 Nov 02
SA3600 production test circuit schematic
18
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
J1
SMA
SA3600
R11
000
HBLOUT
J2
SMA
C2
100pF
HBLIN
R12
000
C6
1.8pF
L4
1.8nH
L3
2.7nH
L2
2.7nH
L5
1.8nH
GND
HBLNA_IN
VCC
L11
UL
L12
UL
HBMIX_IN-N
PD1
GND
C6
100pF
HBVCO_OUT
PD2
LBVCO_OUT
R7
10
2
23
3
22
4
21
VCC
5
20
LBMIX_IN
6
19
7
18
8
MIXER_OUT-N
17
9
16
10
15
SA3600
14
x2
12
13
C16
100nF
GND
LBLNA_IN
J11
SMA
PD1 PD2 PD3
Sleep mode
Tx mode, LO LB Buffer
Rx mode cell, LO Gain
Rx mode cell, HI Gain
Rx mode PCS, LO Gain X2
Rx mode PCS, HI Gain X2
Rx mode PCS, LO Gain No X2
Rx mode PCS, HI Gain No X2
C11
1.2pF
LBLOOUT
C16
100pF
L15
22nH
GND
PD3
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
J8
SMA
C18
1nF
LBMIN
C33
1pF
C28
6.8pF
C20
27pF
L7
180nH
L8
120nH
L6
180nH
C19
27pF
MIXER_OUT-P
R4
10k
82MHz IF
J9
C22
1nF SMA
GND
MIXOUT
LBVCO_IN
R3
10k
PD3
HBVCO_IN
C27
6.8pF
Mode Select
J12
VCC
LBLNA_OUT
24
C24
22pF
J7
SMA
LBLIN
PD2
L10
10nH
C34
10nF
R2
10
HBLOOUT
J5
SMA
C13
100pF
1
GND 11
PD1
C10
5.6pF
R8
330
LBLOUT
L16
8.2nH
C37
10nF
C4
100pF
C5
100pF
C7
1.8pF
J4
SMA
R9
UL
HBMIX_IN-P
C9
100pF
HBMIN
L18
TOKO 8.2nH
HBLNA_OUT
C3
100nF
J3
SMA
L19
UL
C1
0.5pF
R1
10
J6
SMA
C12
1.5pF
R10
10
L9
120nH
C21
100pF
L13
2.7nH
C32
8.2pF
0402
C31
8.2pF
0402
0
1
0
1
0
1
0
1
J10
SMA
C23
100pF
C30
2.2pF
VCC
R6
10
GND
C26
100nF
C25
100pF
C38
100pF
SR02236
Figure 37.
1999 Nov 02
SA3600 Application circuit (fIF = 82 MHz)
19
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 1. Low-band LNA S-parameters (high gain mode)
Freq (MHz)
|S11| (U)
<S11 (deg)
|S21| (U)
<S21 (deg)
|S12| (U)
<S12 (deg)
|S22| (U)
<S22 (deg)
800
0.42
–89
5.19
89
0.006
14
0.98
–37
810
0.42
–89
5.17
89
0.006
19
0.98
–37
820
0.41
–90
5.11
88
0.005
45
0.98
–38
830
0.41
–91
5.11
87
0.004
11
0.98
–38
840
0.41
–91
5.03
86
0.008
14
0.98
–38
850
0.41
–92
4.97
85
0.007
–2
0.98
–39
860
0.40
–92
4.97
84
0.006
32
0.98
–40
870
0.40
–93
4.92
83
0.008
8
0.98
–40
880
0.40
–93
4.85
82
0.007
–9
0.98
–41
890
0.39
–93
4.84
81
0.006
–18
0.98
–42
900
0.39
–93
4.77
81
0.005
3
0.98
–42
910
0.39
–94
4.73
79
0.005
–12
0.97
–42
920
0.38
–94
4.67
79
0.009
3
0.98
–43
930
0.38
–94
4.61
78
0.007
13
0.98
–43
940
0.38
–95
4.55
77
0.003
–1
0.98
–44
950
0.37
–95
4.49
77
0.006
–33
0.98
–44
960
0.37
–95
4.43
76
0.005
–29
0.98
–44
970
0.37
–96
4.36
75
0.008
–46
0.98
–45
980
0.36
–96
4.30
75
0.006
8
0.97
–46
990
0.36
–96
4.25
74
0.009
–24
0.98
–47
1000
0.36
–97
4.23
74
0.005
21
0.98
–47
1010
0.36
–96
4.16
73
0.007
–8
0.98
–47
1020
0.36
–97
4.15
73
0.008
–20
0.98
–48
1030
0.36
–97
4.11
73
0.008
–22
0.97
–48
1040
0.35
–97
4.07
71
0.007
–55
0.97
–49
1050
0.35
–97
4.04
71
0.009
–35
0.98
–49
1999 Nov 02
20
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters
Freq(MHz)
|S11| (U)
<S11 (deg)
|S22| (U)
<S22 (deg)
670
0.37
–168
0.46
75
680
0.37
–168
0.47
73
690
0.35
–169
0.49
71
700
0.33
–171
0.50
69
710
0.32
–171
0.50
67
720
0.31
–171
0.51
66
730
0.30
–172
0.52
64
740
0.28
–171
0.53
63
750
0.27
–171
0.53
61
760
0.26
–170
0.54
60
770
0.25
–170
0.55
58
780
0.24
–168
0.56
56
790
0.23
–168
0.56
55
800
0.22
–165
0.58
54
810
0.21
–162
0.58
52
820
0.20
–160
0.59
51
830
0.20
–157
0.59
49
840
0.21
–153
0.60
48
850
0.21
–149
0.60
46
860
0.20
–147
0.61
45
870
0.21
–145
0.62
44
880
0.22
–141
0.62
42
890
0.23
–140
0.62
41
900
0.24
–137
0.63
40
910
0.25
–136
0.64
38
920
0.26
–136
0.64
37
930
0.27
–134
0.64
35
940
0.29
–134
0.65
35
950
0.30
–135
0.65
33
960
0.31
–134
0.65
32
970
0.32
–134
0.65
31
980
0.34
–135
0.66
30
990
0.35
–136
0.66
29
1000
0.37
–136
0.66
28
1010
0.38
–137
0.66
26
1020
0.39
–138
0.66
26
1030
0.41
–139
0.66
25
1040
0.42
–140
0.66
24
1050
0.43
–141
0.67
23
1060
0.44
–142
0.66
22
1999 Nov 02
21
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters (continued)
Freq(MHz)
|S11| (U)
<S11 (deg)
|S22| (U)
<S22 (deg)
1070
0.46
–143
0.66
21
1080
0.48
–144
0.66
21
1090
0.49
–145
0.66
20
1100
0.51
–147
0.66
20
1110
0.52
–150
0.67
19
1120
0.53
–151
0.67
18
1130
0.53
–153
0.67
18
1140
0.54
–155
0.67
18
1150
0.55
–156
0.68
17
1160
0.56
–157
0.68
16
1170
0.57
–159
0.68
16
1999 Nov 02
22
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 3. Mixer output S-parameters
Both pins (17, 18)
1999 Nov 02
Freq(MHz)
|S11| (U)
<S11 (deg)
70
1.00
–8
80
1.00
–9
90
0.99
–10
100
0.99
–11
110
0.99
–12
120
0.99
–13
130
0.99
–14
140
0.99
–16
150
0.99
–16
160
0.99
–18
170
0.99
–19
180
0.99
–20
190
0.99
–21
200
0.99
–22
23
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 4. Low-band mixer input S-parameters
1999 Nov 02
Freq(MHz)
|S11| (U)
<S11 (deg)
800
0.84
–14
810
0.85
–14
820
0.85
–14
830
0.85
–15
840
0.84
–15
850
0.85
–15
860
0.85
–15
870
0.84
–15
880
0.85
–15
890
0.85
–15
900
0.84
–16
910
0.85
–15
920
0.84
–16
930
0.85
–16
940
0.85
–17
950
0.85
–17
960
0.85
–17
970
0.84
–17
980
0.85
–17
990
0.84
–18
1000
0.84
–18
1010
0.85
–18
1020
0.84
–18
1030
0.85
–19
1040
0.84
–19
1050
0.85
–19
24
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 5. High-band LNA S-parameters
Freq (MHz)
|S11| (U)
<S11 (deg)
|S21| (U)
<S21 (deg)
|S12| (U)
<S12 (deg)
|S22| (U)
<S22 (deg)
1800
0.38
156
6.73
172
0.05
105
0.13
–106
1810
0.37
156
6.77
170
0.05
113
0.11
–100
1820
0.37
155
6.82
168
0.05
109
0.10
–95
1830
0.37
154
6.79
167
0.05
107
0.10
–88
1840
0.36
155
6.84
165
0.05
106
0.09
–74
1850
0.36
154
6.80
164
0.05
102
0.09
–67
1860
0.35
155
6.81
162
0.05
108
0.10
–51
1870
0.35
154
6.85
161
0.05
101
0.10
–47
1880
0.34
152
6.84
159
0.05
102
0.12
–41
1890
0.33
154
6.84
158
0.05
107
0.13
–36
1900
0.33
153
6.83
157
0.05
102
0.14
–32
1910
0.33
154
6.83
155
0.05
101
0.15
–30
1920
0.32
153
6.87
154
0.05
102
0.17
–28
1930
0.32
154
6.84
152
0.05
99
0.18
–28
1940
0.32
153
6.86
151
0.05
101
0.19
–26
1950
0.32
153
6.84
149
0.05
103
0.21
–26
1960
0.32
154
6.78
148
0.05
101
0.22
–26
1970
0.32
155
6.80
146
0.05
100
0.24
–26
1980
0.31
154
6.75
145
0.04
100
0.26
–26
1990
0.32
156
6.72
143
0.04
99
0.27
–27
2000
0.31
155
6.68
142
0.05
100
0.28
–27
2010
0.31
156
6.68
141
0.05
103
0.30
–30
2020
0.31
157
6.65
139
0.04
104
0.31
–31
2030
0.31
158
6.63
138
0.04
96
0.32
–30
2040
0.31
158
6.59
137
0.05
105
0.33
–32
2050
0.31
159
6.58
135
0.05
104
0.34
–34
1999 Nov 02
25
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters
Freq(MHz)
|S11| (U)
<S11 (deg)
|S22| (U)
<S22 (deg)
1700
0.82
–36
0.31
86
1710
0.82
–36
0.30
85
1720
0.82
–37
0.29
83
1730
0.82
–36
0.29
81
1740
0.82
–37
0.29
81
1750
0.83
–37
0.27
79
1760
0.82
–37
0.26
76
1770
0.82
–38
0.25
76
1780
0.82
–38
0.24
74
1790
0.83
–39
0.24
72
1800
0.82
–39
0.23
71
1810
0.82
–39
0.21
69
1820
0.83
–40
0.20
68
1830
0.82
–40
0.20
66
1840
0.82
–41
0.18
67
1850
0.82
–41
0.16
63
1860
0.82
–42
0.16
61
1870
0.82
–42
0.14
60
1880
0.82
–42
0.12
56
1890
0.82
–43
0.11
52
1900
0.82
–43
0.11
53
1910
0.81
–44
0.08
47
1920
0.82
–44
0.07
42
1930
0.81
–45
0.06
34
1940
0.81
–46
0.04
29
1950
0.81
–46
0.03
–1
1960
0.81
–47
0.02
–21
1970
0.80
–47
0.03
–57
1980
0.80
–48
0.04
–85
1990
0.80
–48
0.05
–103
2000
0.80
–48
0.07
–112
2010
0.80
–49
0.08
–112
2020
0.80
–50
0.10
–119
2030
0.80
–51
0.12
–120
2040
0.79
–51
0.13
–125
2050
0.79
–52
0.15
–127
2060
0.79
–52
0.16
–130
2070
0.79
–52
0.18
–133
2080
0.78
–53
0.20
–135
2090
0.77
–54
0.21
–136
1999 Nov 02
26
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters (continued)
Freq(MHz)
|S11| (U)
<S11 (deg)
|S22| (U)
<S22 (deg)
2100
0.78
–54
0.23
–138
2110
0.77
–55
0.24
–139
2120
0.77
–56
0.26
–142
2130
0.77
–57
0.27
–144
2140
0.76
–57
0.29
–144
2150
0.77
–58
0.29
–145
2160
0.76
–58
0.31
–147
2170
0.76
–59
0.33
–148
2180
0.76
–60
0.34
–150
2190
0.76
–60
0.35
–150
2200
0.76
–61
0.36
–152
1999 Nov 02
27
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
1999 Nov 02
28
SOT355-1
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
NOTES
1999 Nov 02
29
Philips Semiconductors
Product specification
Low voltage dual-band RF front-end
SA3600
Data sheet status
Data sheet
status
Product
status
Definition [1]
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
 Copyright Philips Electronics North America Corporation 1999
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 11-99
Document order number:
1999 Nov 02
30
9397-750-06558