PHILIPS SA1920

INTEGRATED CIRCUITS
SA1920
Dual-band RF front-end
Product specification
Supersedes data of 1998 Apr 07
IC17 Data Handbook
1999 Mar 02
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
DESCRIPTION
FEATURES
• Low current consumption
• Outstanding low- and high-band noise figure
• Excellent gain stability versus temperature and supply
• Image reject high-band mixer with over 30 dB of rejection
• Increased low-band LNA gain compression during analog
The SA1920 is an integrated dual-band RF front-end that operates
at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and
GSM) frequencies, and is designed in a 13 GHz fT BiCMOS
process—QUBiC1. The low-band is a combined low-noise amplifier
(LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz
with 17.5 dB of gain and an IIP3 of –5 dBm. The wide-dynamic
range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain
and an IIP3 of +5 dBm.
transmission
• LO input and output buffers
• Frequency doubler
• On chip logic for network selection and power down
• Very small outline package
The high-band contains a receiver front-end, doubler and a high
frequency transmit mixer intended for closed loop transmitters. One
advantage of the high-band architecture is an image-rejection mixer
with over 30 dB of image rejection; thus, eliminating external filter
cost while saving board space. The system noise figure is 4.2 dB at
1960 MHz with a power gain of 23.5 dB and an IIP3 of –12.5 dB.
APPLICATIONS
• 800 to 1000 MHz analog and digital receivers
• 1800 to 2000 MHz digital receivers
• Portable radios
• Digital mobile communications equipment
V CC
25
Tx ON
26
V CC
27
HIGH BAND IMAGE SET I
28
GND
29
HIGH BAND LO INPUT
30
LOW BAND LO INPUT
31
GND
32
HIGH BAND IMAGE SET Q
33
GND
34
X2 ON
35
LOW BAND LO A
LOW BAND LO A
HIGH BAND LO B
HIGH BAND LO A
GND
LOW BAND IF B
LOW BAND IF A
HIGH BAND IF B
HIGH BAND IF A
SYN ON
HI/LO
24
23
22
21
20
19
18
17
16
15
14
13
Figure 1.
45
46
47
48
GND
GND
N/C
44
LOW BAND LNA OUT
43
GND
42
LOW BAND LNA IN
41
HIGH BAND LNA IN
40
CC
39
GND
38
V
N/C
37
GND
36
STRONG SIGNAL
N/C
Rx ON
PIN CONFIGURATION
12
N/C
11
GND
10
Tx B
9
Tx A
8
GND
7
V CC
6
GND
5
MIX IN
4
GND
3
Tx IF B
2
Tx IF A
1
N/C
SR01435
Pin Configuration
ORDERING INFORMATION
TYPE NUMBER
SA1920
1999 Mar 02
NAME
LQFP48
PACKAGE
DESCRIPTION
Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm
2
VERSION
SOT313-2
853–2057 20918
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
PIN DESCRIPTIONS
PIN
NO.
PIN NAME
DESCRIPTION
1
N/C
2
Tx IF A
Transmit IF A
3
Tx IF B
Transmit IF B
4
GND
5
MIX IN
6
GND
Ground
7
VCC
VCC
8
GND
Ground
9
Tx A
Transmit Signal A
10
Tx B
Transmit Signal B
11
GND
Ground
12
N/C
No Connection
13
HI/LO
14
SYN ON
15
HIGH BAND IF A
High Band IF A
16
HIGH BAND IF B
High Band IF B
17
LOW BAND IF A
Low Band IF A
18
LOW BAND IF B
Low Band IF B
19
GND
20
HIGH BAND LO A
High Band LO Output
21
HIGH BAND LO B
High Band LO Output
22
LOW BAND LO A
Low Band LO Output
23
LOW BAND LO B
Low Band LO Output
24
Rx ON
25
VCC
26
Tx ON
27
VCC
28
HIGH BAND IMAGE SET I
29
GND
30
HIGH BAND LO INPUT
High Band LO Connection
31
LOW BAND LO INPUT
Low Band LO Connection
32
GND
33
HIGH BAND IMAGE SET Q
34
GND
35
X2 ON
36
N/C
No Connection
37
N/C
No Connection
38
STRONG SIGNAL
39
GND
Ground
40
VCC
VCC
41
GND
Ground
42
HIGH BAND LNA IN
High Band LNA Input
43
LOW BAND LNA IN
Low Band LNA Input
44
GND
45
LOW BAND LNA OUT
46
GND
Ground
47
GND
Ground
48
N/C
No Connection
1999 Mar 02
No Connection
Ground
Low Band Mixer Input
High Band/Low Band Control
LO Buffer Power Control
Ground
LNA/Mixer Power Control
VCC
Tx Mixer/Driver Power
VCC
High Band Image Set I
Ground
Ground
High Band Image Set Q
Ground
Freq. Doubler Power Control
Strong Signal Detection
Ground
Low Band LNA Output
3
Philips Semiconductors
Product specification
N/C
Tx IF A
Tx IF B
GND
MIX IN
GND
V CC
GND
Tx A
SA1920
Tx B
GND
N/C
Dual-band RF front-end
HI/LO
N/C
SYN ON
GND
HIGH BAND IF A
GND
HIGH BAND IF B
LNA OUT
LOW BAND IF A
GND
LOW BAND IF B
LOW BAND LNA IN
IMAGE
REJECT
MIXER
GND
HIGH BAND LNA IN
GND
HIGH BAND LO A
X2
HIGH BAND LO B
V CC
LOW BAND LO A
GND
LOW BAND LO B
STRONG SIGNAL
N/C
N/C
X2 ON
GND
HIGH BAND IMAGE SET Q
GND
LOW BAND LO INPUT
HIGH BAND LO INPUT
GND
HIGH BAND IMAGE SET I
V
CC
Tx ON
VCC
Rx ON
SR01436
Figure 2.
1999 Mar 02
Block Diagram
4
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 1. POWER DOWN CONTROL
For Applications Not Using a Frequency Doubler, each state is
defined as follows:
DOUBLER
Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2
ON)
LO BUFFER
LNA
MIXER
TX MIXER
DRIVER
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
Off
Off
Off
Off
Off
x000xx
Sleep
Off
Off
Off
Off
010000
Low-Band LO Buffer on
Off
Off
On
Off
Off
Off
Off
Off
Off
011000
Low-Band Receive Normal
Off
Off
On
Off
On
Off
On
Off
Off
011010
Low-Band receive Strong Signal
Off
Off
On
Off
Off
Off
On
Off
Off
011100
Low-Band Transmit (Analog only)
Off
Off
On
Off
On
Off
On
Off
On
High Bias
010100
N/A
Off
Off
On
Off
Off
Off
Off
Off
On
110000
High-Band LO Buffer On
Off
On
Off
Off
Off
Off
Off
Off
Off
111000
High-Band Receive Normal
Off
On
Off
On
Off
On
Off
Off
Off
111010
High-Band Receive Strong Signal
Off
On
Off
Off
Off
On
Off
Off
Off
110100
N/A
Off
On
Off
Off
Off
Off
Off
On
Off
For Applications Using a Frequency Doubler, each state is
defined as follows:
DOUBLER
Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal, X2
ON)
LO BUFFER
LNA
MIXER
TX MIXER
DRIVER
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
x000xx
Sleep
Off
Off
Off
Off
Off
Off
Off
Off
Off
010000
Transmit (Low and High Band)
Off
Off
On
Off
Off
Off
Off
Off
Off
011000
Low-Band Receive Normal
Off
Off
On
Off
On
Off
On
Off
Off
011010
Low-Band Receive Strong Signal
Off
Off
On
Off
Off
Off
On
Off
Off
011110
Low-Band Transmit (Analog only)
Off
Off
On
Off
On
Off
On
Off
Off
High Bias
010100
Low-Band Transmit (GSM)
Off
Off
On
Off
Off
Off
Off
Off
On
010001
Transmit (Low and High Band)
On
Off
On
Off
Off
Off
Off
Off
Off
011001
Low-Band Receive Normal
On
Off
On
Off
On
Off
On
Off
Off
011011
Low-Band Receive Strong Signal
On
Off
On
Off
Off
Off
On
Off
Off
011111
Low-Band Transmit(Analog only)
On
Off
On
Off
On
Off
On
Off
Off
High Bias
111001
High-Band Receive Normal
On
On
On
On
Off
On
Off
Off
Off
111011
High-Band Receive Strong Signal
On
On
On
Off
Off
On
Off
Off
Off
110101
High-Band Transmit (GSM)
On
On
On
Off
Off
Off
Off
On
Off
NOTE:
“0” is low logic state; “1” is high logic state.
1999 Mar 02
5
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
OPERATION
The low-band contains both an LNA and mixer that is designed to
operate in the 800 to 1000 MHz frequency range. The high-band
contains an LNA and image-rejection mixer that is designed to
operate in the 1800 to 2000 MHz frequency range with over 30 dB of
rejection over an intermediate frequency (IF) range from 100 to
125 MHz.
Control Logic Section
Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, X2 (doubler)
On, control the logic functions. The HI/LO mode selects between
low-band and high-band operation. The SYN ON mode enables the
LO buffers independent of the other circuitry. When SYN ON is high,
all internal buffers in the LO path of the circuit are turned on, thus
minimizing LO pulling when the remainder of the receive or transmit
chain is powered-up.
Image rejection is achieved in the internal architecture by two RF
mixers in quadrature and two all-pass filters in the I and Q IF
channels that phase shift the IF by 45 and 135, respectively. The
two phase shifted IFs are recombined and buffered to produce the
IF output signal.
The Rx ON mode enables the LO buffers when the device is in the
low-band receive normal, receive strong signal and transmit modes;
the Rx ON mode enables the LO buffers, also, when the device is in
the high-band receive normal, and receive strong signal modes.
The LO section consists of an internal all-pass type phase shifter to
provider quadrature LO signals to the receive mixers. The all-pass
filters outputs are buffered before being fed to the receive mixers.
The transmit mixer section consists of a low-noise amplifier, and a
down-convert mixer. In the transmit mode, an internal LO buffer is
used to drive the transmit IF down-convert mixer.
The Tx ON mode enables the transmit mixer. The strong signal
mode, when disabled, allows the low- and high-band LNAs to
function normally; and when the strong signal mode is enabled, it
turns-off the low- and high-band LNAs. This is needed when the
input signal is large and needs to be attenuated.
The doubler (X2) on mode enables the doubler. When the doubler is
on, the input signal from the LO buffers is doubled in frequency. The
signal can be used to drive the image-rejection mixer and the output
LO high-band ports. When the doubler mode is on, all other control
logic (see table 1) functions the same.
Low-Band Receive Section
The circuit contains a LNA followed by a wide-band mixer. In a
typical application circuit, the LNA output uses an external pull-up
inductor to VCC and is AC coupled. The mixer IF outputs are
differential. A typical application will load the output buffer with an
inductor across the IF outputs, a pull-up inductor to VCC and an AC
coupled capacitor to the matching network.
Local Oscillator (LO) Section
The LO input directly drives the two internal all-pass networks to
provide quadrature LO to the receive mixers. A synthesizer-on (SYN
ON) mode is used to power-up all LO input buffers, thus minimizing
the pulling effect on the external VCO when entering receive or
transmit mode.
Low-Band Receive Section (Analog Transmit
Mode)
The bias current of the low-band LNA will increase during analog
transmission, which increases its gain compression point and makes
the receiver less sensitive to PA leakage power for an AMPS
application.
Transmit Mixer Section
The transmit mixer is used for down-conversion to the transmit IF. Its
inputs are coupled to the transmit RF which is down-converted to a
modulated transmit IF frequency, and phase-locked with the
baseband modulation.
High-Band Receive Section
The circuit contains an LNA followed by two high dynamic range
mixers. These are Gilbert cell mixers; the internal architecture is fully
differential. The LO is shifted in phase by 45 and 135 and mixes
the amplified RF signal to create I and Q channels. The two I and Q
channels are buffered, phase shifted by 45 and 135, respectively,
amplified and recombined internally to realize the image rejection.
The IF outputs are HIGH impedance (open-collector type). A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to VCC and AC coupled capacitors to the
matching network.
The IF output is differential and of the open-collector type. A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to VCC and an AC coupled capacitor to
the matching network.
1999 Mar 02
6
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
ABSOLUTE MAXIMUM RATINGS
QUANTITY
SYMBOL
VALUE
UNIT
Input supply voltage at pins: 7, 25, 27, 40
VCC
4.75
V
Power dissipation
PD
150
mW
Input power at all ports
PIN
+20
dBm
Operating temperature range (pin temp)
TO
–40 to+85
°C
Storage temperature range
Tsrg
–65 to +125
°C
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
VCC = +3.75 V, TA = –40 to +85°C unless otherwise noted
QUANTITY
CONDITION
DC Supply voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
VCC
3.6
3.75
3.9
V
1
100
A
12.5
15.2
mA
Current Consumption: Sleep Mode
X000XX
ICC
Low Band Receive Normal
011000
ICC
Low Band Receive Strong
011010
ICC
8.8
mA
Low Band Transmit (Analog)
011110
ICC
18.0
mA
Low Band Transmit (GSM)
010100
ICC
High Band Receive Normal
111000
ICC
High Band Receive Strong
111010
ICC
38.0
mA
High Band Transmit (GSM)
110100
ICC
21.5
mA
8.8
mA
10.1
16.0
35.0
Frequency Doubler
42.0
mA
53.0
mA
Logic Low Input
0
0.5
V
Logic High Input
1.9
4.0
V
1999 Mar 02
7
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
VCC = +3.75 V, FreqRF = 881 MHz, FreqLO = 991.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated
Min
TYP
PARAMETERS
–3
+3
Max
UNITS
960
MHz
NOTES
System
RF Input Frequency Range
869
881
IF Frequency
110.52
MHz
LO Frequency
991.52
MHz
Cascaded Power Gain; includes 3dB filter loss
Power Gain Reduction (Strong Signal Mode—LNA Off)
22.5
24
25.5
dB
29
35
41
dB
Cascaded Noise Figure; includes 3dB filter loss
2.6
dB
LNA
LNA Gain
17
17.5
18
dB
LNA IIP3
–6
–5
–4
dBm
LNA Noise Figure
1.6
1.7
1.8
dB
Mixer Gain
9
9.5
10
dB
Mixer IIP3
4
5
6
dBm
Mixer Noise Figure
9
10
11
dB
Mixer
Other
Input Impedance, RF Port
W
50
Return Loss at LNA Inputs and Output
–10
dB
1
Return Loss at Mixer Input and Outputs
–10
dB
1
LO leakage at RF Port
–42
LO Input Power
–5
dBm
–3
Turn ON/OFF Time
–1
dBm
msec
100
Low-Band LO Buffer
PARAMETERS
Min
LO Frequency
–3
TYP.
+3
Max
UNITS
991.52
MHz
Differential Output Power
–7
dBm
Differential Output Impedance
100
W
Harmonic Content
–20
dBc
Input Power
–5
–3
–1
dBm
Input Impedance
50
W
Turn On/Off Time
30
msec
1999 Mar 02
8
NOTES
1
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation
LNA and Image Reject Mixer
VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = –3 dBm, TA = +25C; unless otherwise stated
PARAMETERS
MIN
RF Input Frequency Range
–3
TYP.
+3
1805
IF Frequency
100
LO Frequency
1905
110.52
MAX
UNITS
1990
MHz
125
MHz
2115
MHz
Power Gain
21
23.5
25
dB
Power Gain Reduction (Strong Signal Mode—LNA Off)
40
47
54
dB
Noise Figure
4.0
Input Impedance, RF Port
4.2
4.4
dB
W
50
Return Loss at Inputs
–10
dB
LO leakage at RF Port
–48
dBm
1 dB RF Input Compression Point
–24
dBm
(3RD
IP3
Order Intermodulation Product)
Referred to the RF Input Port
–15
–12.5
–10
–65
dBc
(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 2040 MHz and RF = 2003 MHz.
–62.5
dBc
dB
30
35
LO Input Power
–5
–3
Turn ON/OFF Time
1
dBm
(2 x LO) – (2 x RF) Spur Performance
–50
50 dBm IN Referred to RF Input
In ut Port
Measure at LO = 2040 MHz and RF = 1985 MHz
Image rejection, fRX+2fIF or fRX –2fIF
Referred to the RF Input Port
NOTES
–1
dBm
msec
30
High-Band LO Buffer
PARAMETERS
MIN
LO Frequency Range
–3
TYP.
1905
Differential Output Power
–9
Differential Output Impedance
100
Harmonic Content
Input Power
–5
–3
+3
MAX
UNITS
2115
MHz
dBm
W
–20
dBc
–1
dBm
Input Impedance
50
W
Turn On/Off Time
30
msec
1999 Mar 02
9
NOTES
1
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Frequency Doubler
PARAMETERS
MIN
Output Frequency Range
–3
TYP.
+3
1905
MAX
UNITS
2115
MHz
Output Power
–9
dBm
Differential Output Impedance
100
W
Harmonic Content (3F, 4F, etc.)
–20
dBc
Subharmonic Content (Fi)
–20
dBc
Non-Harmonic Content
80
dBc
Turn On/Off Time
30
msec
Phase Noise Degradation, ∆ f = 30kHz
6
dB
NOTES
Transmit Mixer
PARAMETERS
MIN
TX Mixer Input Frequency
–3
TYP.
+3
824
TX RF Input Impedance, Balanced
MAX
UNITS
1910
MHz
200
MHz
W
200
TX Mixer Output Frequency
70
TX IF Load Impedance
W
1000
Maximum TX IF Load Capacitance
2
Conversion Power Gain
15
16
17
pF
dB
1 dB Input Compression Point
–17
dBm
IIP2
20
dBm
IIP3
–9
Noise Figure (double sideband)
–7
7.5
–5
dBm
dB
Reverse Isolation TXIN–LOIN
40
dB
Isolation LOIN–TXIN
40
dB
NOTES:
1. External matching network is required.
2. From 200W input to a 1kW output.
1999 Mar 02
10
NOTES
2
P1
AP45
1999 Mar 02
Figure 3.
SA1920 Dual-Band Test Circuit
11
J16–2
J21–3
DP26
AP12
AP38
AP40
AP41
AP44
AP46
DP34
DP33
AP42
AP10
1K
A
B
1
AT10
3
C31
0.1 uf
C9
5.6 pf
B
A
A
AT1
PAT–10
1
A
B
A
3.92K
Maletxsma
4763–000–00
I1691
P4
R25
AT2
DPS1
6
3
3
R18
1
R3
R8
3.92K
3.92K
R5
3.92K
R6
3.92K
R7
A
C35
33 pf
C20
33 pf
3 AT4 1
PAT–10
B
A
C36
33 pf
R23
1
C11
1000 pf
L11
330 nH
B
A
C4
1000 pf
L10
330 nH
33 pf
C19
C10
1000 pf
3 AT3 1
PAT–10
B
R11
4.32K
5.6 pf
C6
B
R9
1.21K
A
C2
1.5 pf
8.2 pf
C5
3.92K
R10
1
LRPS–2–11
L3
C1
1000 pf
R2
562
coil
L2
330 nH
A 1 uH B
U2
4
PORT 1
SUM PORT
PORT 2 3
DPS1
PAT–10
1
Maleltxsma
4763–000–00
I1692
B
P5
3.92K
R26
MaleLTXAC_SMA
4763–000–00
I1929
B
P3
3.92K
B
A
L1
330 nH
10 pf
C24
C23
8.2 pf
PAT–3
R17
51.1
I1689
4763–000–00
Maleltxsma
R4
P2
3.92K
R1
C34
33 pf
C28
4.7 pf
L7
330 nH
C7
8.2 pf
R24
1
C27
5.6 pf
C3
5.6 pf
L6
330 nH
C18
33 pf
C15
100 pf
DUT–24
DUT–23
DUT–22
DUT–21
DUT–20
DUT–19
DUT–18
DUT–17
DUT–16
DUT–15
DUT–14
DUT–13
DUT–10
RXON
LBLOB
LBLOA
HBLOB
HBLOA
GND
LBIFB
LBIFA
HBIFB
HBIFA
SYNON
HILO
TXB
TXA
N/C
DUT–9
GND
DUT–12
GND
DUT–8
DUT–11
VCC
LBMIN
GND
GND
TXIFB
TXIFA
N/C
DUT–7
DUT–5
DUT–6
DUT–4
DUT–3
DUT–2
DUT–1
IMAGE
REJECT
MIXER
2X
SA1920
VCC
TXON
VCC
HBBPS
GND
HBTNK
LBTNK
GND
LBBPS
GND
X2ON
N/C
N/C
STRONG
GND
VCC
HBLIN
LBLIN
GND
DUT–25
DUT–26
DUT–27
DUT–28
DUT–29
DUT–30
DUT–31
DUT–32
DUT–33
DUT–34
DUT–35
DUT–36
DUT–37
DUT–38
DUT–39
DUT–40
DUT–42
DUT–43
DUT–41
DUT–44
DUT–47
GND
DUT–46
GND
DUT–45
DUT–48
RxMxGND
LBLOUT
N/C
C16
100 pf
10 pf
C25
10 pf
1
R12
R20
51.1
R21
51.1
1
R16
33 pf
C21
33 pf
C22
C12
1000 pf
C14
1000 pf
C26
C13
1000 pf
C17
100 pf
C29
2.2 pf
C30
1.5 pf
C8
3.3 pf
R28
L5
L8
8.2 nH
L9
8.2 nH
L4
3.92K
R14
1 AT6 3
PAT–3
1 AT5 3
PAT–3
3.92K
R15
B 1 uH A
B
A
B
A
B 1 uH A
3.92K
R30
3.92K
R31
3.92K
R29
332
R27
4.7 nH
L12
3.92K
DPS1
PAT–3
1 AT8 3
PAT–3
1 AT7 3
C32
0.1 uf
LRPS–2–11
J28–3
J29–2
P8
J26–3
P6
P7
B
A
J24–4
J26–2
J25–2
J28–2
DP19
DPS1HS
DPS1HF
DPS1LF
DPS1LS
AP11
AP39
J23–4
J100–5
J100–4
J100–2
J100–3
J21–2
J22–5
Maletxsma
4763–000–00
I1695
AP36
AP14
DP23
DP31
Maleltxsma
4763–000–00
I1693
B
A
AP16
Maleltxsma
4763–000–00
I1696
B
A
AP16
AP47
DPS1
1 DO NOT ASSEMBLE
C38
1000 pf
J1–3
U1
3
PORT 2
6
SUM PORT
4 PORT 1
C33
0.1 uf
R19
51.1
R22
51.1
C37
100 pf
AP43
Dual-band RF front-end
J20–3
J15–3
J11–5
J12–4
J11–2
J13–3
J13–2
J6–5
J2–5
J2–4
AP9 R13
DPS1
1
A 3
AT9
B
PAT–10 R32
Maleltxsma
1
4763–000–00
I1688
J1–4
Philips Semiconductors
Product specification
SA1920
SR01801
1999 Mar 02
Figure 4.
12
100 nF
C25
SA1920 Dual-Band Application Circuit
J12
SYNON
J11
HILO
47 pF
C22
8.2 nH
1.5 pF
C23
L7
220 nH
33 pF
33 pF
6.8 pF
180 nH
C5
C4
C28
6.8 pF
C3
L2
2K
3.9 pF
C29
6.8 pF
L1
180 nH
R2
2K
3
2
1
12
N/C
C18
33 pF
C35
1.5 pF
C27
100 nF
GND
39
22
LBLOA
VCC
40
21
HBLOB
GND
41
20
HBLOA
19
GND
HBLIN
42
18
LBIFB
LBLIN
43
GND
44
17
LBIFA
LBLOUT
45
16
HBIFB
GND
46
15
HBIFA
GND
47
14
SYNON
N/C
48
13
HILO
SR01813
HBMOUT
C12
3.3 pF
L4
270 nH
LBLOB
C13
UL
23
LBMOUT
C11
UL
C10
UL
5 pF
33 pF
C9
C8
L10
UL
X2ON
GND
QSET
GND
LBLOIN
HBLOIN
GND
ISET
VCC
TXON
VCC
35
34
33
32
31
30
29
28
27
26
25
33 pF
J10
SMA
HBLOA
J8
SMA
HBLOB
J7
SMA
LBLOA
J9
SMA
LBLOB
N/C
36
33 pF
L11
UL
33 pF
38
C6
STRONG
L3
220 nH
RXON
5 pF
24
IMAGE
REJECT
MIXER
C7
C24
47 pF
37
C34
33 pF
C30
3.9 pF
L8
150 nH
11
9
TXA
GND
8
GND
10
7
V CC
TXB
6
5
GND
LBMIN
MGND1 4
TXIFB
TXIFA
N/C
C34
10 nF
L5
6.8 nH
C20
33 pF
J16
SMA
HBLIN
N/C
GND
L6
C17
100 nF
R1
C21
8.2 pF
C2
U1
SA1920
(JEANNE)
C19
1 pF
J17
SMA
LBLIN
C26
C16
C14
C15
J19
SMA
LBLOIN
J3
RXON
100 nF
47 pF
J4
TXON
C31
UL
J20
10 pF SMA
HBLOIN
10 pF
R4
2.2 K
J5
X2ON
NOTE: LOGIC PIN MARKED
X2 ON APPLICATION DEMO
BOARD SHOULD BE SET
TO 0 (GND) FOR CORRECT
OPERATION
J6
STRONG
Dual-band RF front-end
VCC
J2
SMA
TXIN
J1
SMA
LBMIN
TXOUT
J18
SMA
10 pF
C1
C32
10 nF
L9
8.2 nH
R3
620
J15
SMA
LBLOUT
Philips Semiconductors
Product specification
SA1920
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
PERFORMANCE CHARACTERISTICS
VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = –5 dBm, TA = +25C; unless otherwise stated
16.0
50.0
+85°C
15.0
45.0
14.0
ICC
(mA)
+25°C
+85°C
13.0
40.0
+25°C
–40°C
11.0
–40°C
ICC
(mA)
12.0
35.0
10.0
30.0
9.0
8.0
3.60
3.70
3.65
3.80
3.75
3.85
25.0
3.60
3.90
3.65
3.70
VCC (V)
3.80
3.75
SR01613
Figure 5.
SR01614
Low Band Receive Normal ICC
Figure 6.
High Band Receive Normal ICC
45
REJECTION (dB)
30
28
26
24
22
GAIN
(dB) 20
18
16
14
12
10
40
35
30
25
20
100
105
110
115
120
100
125
105
IF FREQUENCY (MHz)
110
115
120
Figure 7.
SR01609
High Band Gain vs. IF Frequency
Figure 8.
–10
20
–11
18
–12
IP2
(dBm)
High Band Image Rejection vs. IF Frequency
16
–13
14
–14
12
–15
100
10
105
110
115
120
100
125
105
115
120
125
SR01611
SR01631
Figure 9.
110
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
1999 Mar 02
125
IF FREQUENCY (MHz)
SR01610
IP3
(dBm)
3.90
3.85
VCC (V)
High Band IP3 vs. IF Frequency
Figure 10.
13
High Band IP2 vs. IF Frequency
Philips Semiconductors
Product specification
NOISE FIGURE (dBm)
Dual-band RF front-end
SA1920
6.0
20
5.0
19
–40°C
4.0
GAIN
(dB)
3.0
18
+25°C
17
+85°C
2.0
16
1.0
15
0.0
100
105
110
115
120
125
14
860
IF FREQUENCY (MHz)
870
880
890
900
910
920
930
940
950
960
FREQUENCY (MHz)
SR01612
Figure 11.
SR01615
High Band NF vs. IF Frequency
Figure 12.
LB LNA Gain vs. Frequency
2.6
–2
–3
2.4
–4
NOISE FIGURE (dB)
+85°C
–5
+25°C
–6
IP3
(dBm) –7
–8
–40°C
–9
–10
2.2
+85°C
2
1.8
+25°C
1.6
1.4
–40°C
1.2
–11
–12
860
1
870
880
890
900
910
920
930
940
950
860
960
870
880
890
900
910
920
930
940
SR01616
Figure 13.
960
SR01617
LB LNA IP3 vs. Frequency
Figure 14.
12
LB LNA Noise Figure vs. Frequency
8
–40°C
10
7
–40°C
6
+25°C
GAIN
(dB)
950
FREQUNCY (MHz)
FREQUENCY (MHz)
8
+25°C
IP3 5
(dBm) 4
+85°C
6
+85°C
3
4
2
1
2
0
0
860
870
860
880
890
900
910
920
930
940
950
870
880
890
900
910
920
930
940
SR01619
SR01618
1999 Mar 02
960
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 15.
950
960
LB Mixer Gain vs. Frequency
Figure 16.
14
LB Mixer IP3 vs. Frequency
Philips Semiconductors
Product specification
NOISE FIGURE (dB)
Dual-band RF front-end
SA1920
15
32
14
30
13
+85°C
12
11
28
+25°C
10
–40°C
GAIN 26
(dB)
24
–40°C
9
+25°C
+85°C
22
8
7
20
6
18
1800 1820
5
860
870
880
890
900
910
920
930
940
950
960
1840
1860
1880
1900
1920
1940
1980 2000
1960
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01620
Figure 17.
SR01621
LB Mixer Noise Figure vs. Frequency
Figure 18.
–6
7
6.5
–10
NOISE FIGURE (dB)
–8
IP3
(dBm)
HB Gain vs. Frequency
+85°C
–12
+25°C
–14
–40°C
–16
–18
6
5.5
+85°C
5
4.5
+25°C
4
3.5
–40°C
3
2.5
–20
1800
1820
1840
1860
1880
1900
1920
1940
1960
1980
2
1800
2000
1820
1840
1860
FREQUENCY (MHz)
1880
1900
1920
1940
1960
SR01623
SR01622
Figure 19.
HB IP3 vs. Frequency
Figure 20.
HB Noise Figure vs. Frequency
20
45
18
IMAGE REJECTION (dB)
1980 2000
FREQUENCY (MHz)
+25°C
16
40
+25°C
35
+85°C
14
+85°C
30
+85°C
+25°C
12
IP2
10
(dBm)
8
–40°C
–40°C
6
25
4
2
20
1800
1820
1840
1860
1880
1900
1920
1940
1960
1980
0
1800
2000
1820
1840
1860
FREQUENCY (MHz)
1880
1900
1920 1940 1960
SR01624
Figure 21.
1999 Mar 02
1980 2000
FREQUENCY (MHz)
SR01625
HB Image Rejection vs. Frequency
Figure 22.
15
HB IP2 vs. Frequency
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
–15
1 dB COMP (dBm)
–17
1 dB COMP (dBm)
+85°C
+25°C
–19
–40°C
–21
–23
–25
860
–10
–11
–12
–13
–14
–15
880
890
900
910
920
930
940
950
–40°C
–16
–17
–18
–19
–20
860
870
+85°C
+25°C
870
880
890
900
910
920
930
940
950
960
FREQUENCY (MHz)
960
FREQUENCY (MHz)
SR01629
SR01628
Figure 23.
LB LNA 1 dB Compression vs. Frequency
Figure 24.
–20
–21
1 dB COMP (dBm)
–22
–23
–24
+85°C
+25°C
–25
–40°C
–26
–27
–28
–29
–30
1800 1820
1840
1860
1880
1900
1920
1940
1960
1980 2000
FREQUENCY (MHz)
SR01630
Figure 25.
1999 Mar 02
HB 1 dB Compression vs. Frequency
16
LB Mixer 1 dB Compression vs. Frequency
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
S-PARAMETERS
1:
56.906Ω
–165.14Ω
200MHz
2:
32.531Ω
–80.145Ω
400MHz
3:
27.213Ω
–50.76Ω
600MHz
4:
22.594Ω
–28.63Ω
6.1759pF
900.125MHz
4
1
3
2
START: 100MHz
STOP: 1.35GHz
Figure 26.
SR01632
Typical S11 of the Low Band LNA at 3.75 V for the Low Band Receive Normal Mode
1:
9.2256U
170.16°
200MHz
2:
8.1698U
142.74°
400MHz
3:
6.7943U
124.27°
600MHz
4:
5.2793U
106.87°
900MHz
4
3
2
1
START: 100MHz
STOP: 1.35GHz
Figure 27.
1999 Mar 02
SR01643
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
17
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
2:
7.0159mU
75.611°
400MHz
3:
7.8297mU
90.185°
600MHz
4:
14.215mU
120.84°
900MHz
3
4
2
START: 100MHz
STOP: 1.35GHz
Figure 28.
SR01644
Typical S12 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
1
1:
35.5Ω
294.66Ω
200MHz
2:
351.72Ω
–537.09Ω
400MHz
3:
77.625Ω
–220.38Ω
600MHz
4:
30.91Ω
–120.37Ω
1.4692pF
900MHz
2
4
START: 100MHz
STOP: 1.35GHz
Figure 29.
1999 Mar 02
3
SR01633
Typical S22 of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
18
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
133.16Ω
–326.61Ω
200MHz
2:
74.875Ω
–193.17Ω
400MHz
3:
46.625Ω
–135.03Ω
600MHz
4:
25.117Ω
–83.656Ω
2.1107pF
901.375MHz
1
2
4
3
START: 100MHz
STOP: 1.35GHz
Figure 30.
SR01634
Typical S11 of Low Band LNA @ 3.75V for Receive Strong Signal Mode
1
2
4
START: 100MHz
STOP: 1.35GHz
Figure 31.
1999 Mar 02
1:
82.778mU
56.472°
200MHz
2:
101.74mU
30.696°
400MHz
3:
106.02mU
18.799°
600MHz
4:
97.527mU
992.89m°
901.375MHz
3
SR01645
Typical S21 of the Low Band LNA @ 3.75V for Receive Strong Signal Mode
19
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
82.482mU
48.834°
200MHz
2:
101.97mU
15.44°
400MHz
3:
105.45mU
–4.4673°
600MHz
4:
101.04mU
–32.816°
901.375MHz
1
2
4
3
START: 100MHz
STOP: 1.35GHz
Figure 32.
SR01646
Typical S12 for the Low Band LNA @ 3.75V for the Receive Strong Signal Mode
1
1:
65.453Ω
303.47Ω
200MHz
2:
381.59Ω
–432.3Ω
400MHz
3:
74.375Ω
–206.25Ω
600MHz
4:
28.723Ω
–108.71Ω
1.6267pF
900MHz
2
3
4
START: 100MHz
STOP: 1.35GHz
Figure 33.
1999 Mar 02
SR01635
Typical S22 for the Low Band LNA @ 3.75V for the Strong Receive Signal Mode
20
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
102.26Ω
–217.14Ω
200MHz
2:
24.902Ω
–100.07Ω
400MHz
3:
20.596Ω
–48.596Ω
600MHz
4:
20.036Ω
–18.022Ω
9.8121pF
900MHz
4
1
3
2
START: 100MHz
STOP: 1.35GHz
Figure 34.
SR01636
Typical S11 for the Low Band Mixer @ 3.75V for the Receive Normal Mode
3
1:
15.326Ω
–41.15Ω
200MHz
2:
12.527Ω
–7.6484Ω
400MHz
3:
19.854Ω
11.1Ω
600MHz
4:
27.865Ω
–9.7334Ω
18.166pF
900.125MHz
4
2
1
START: 100MHz
STOP: 1.35GHz
Figure 35.
1999 Mar 02
SR01637
Typical S11 for the Low Band LO @ 3.75V for the Low Band Receive Normal Mode
21
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
70.324Ω
–120.49Ω
200MHz
2:
45.121Ω
–61.621Ω
400MHz
3:
39.195Ω
–39.092Ω
600MHz
4:
33.025Ω
–24.061Ω
7.3497pF
900MHz
4
3
1
2
START: 100MHz
STOP: 1.35GHz
Figure 36.
SR01638
Typical S11 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1:
16.617U
161.94°
200MHz
2:
12.974U
134.43°
400MHz
3:
10.255U
118.75°
600MHz
4:
7.3947U
101.63°
900MHz
4
2
3
1
START: 100MHz
STOP: 1.35GHz
Figure 37.
1999 Mar 02
SR01647
Typical S21 of the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
22
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
4.6161mU
97.782°
200MHz
2:
6.5206mU
88.02°
400MHz
3:
9.1807mU
105.05°
600MHz
4:
15.58mU
119.06°
900MHz
4
3
2
1
START: 100MHz
STOP: 1.35GHz
Figure 38.
SR01648
Typical S12 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
1
1:
67.703Ω
295.39Ω
200MHz
2:
436.03Ω
–336.16Ω
400MHz
3:
105.43Ω
–216.6Ω
600MHz
4:
37.477Ω
–123.19Ω
1.4355pF
900MHz
2
4
START: 100MHz
STOP: 1.35GHz
Figure 39.
1999 Mar 02
3
SR01639
Typical S22 for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
23
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
13.76Ω
–15.057Ω
1.55GHz
2:
10.422Ω
–5.5498Ω
1.85GHz
3:
11.58Ω
–3.0508Ω
1.95GHz
4:
12.092Ω
–616.21mΩ
125.99pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
Figure 40.
SR01640
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Normal Mode
1:
12.135Ω
–53.891Ω
1.55GHz
2:
9.3379Ω
–38.457Ω
1.85GHz
3:
8.75Ω
–34.238Ω
1.95GHz
4:
8.7695Ω
–31.25Ω
2.4844pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
Figure 41.
1999 Mar 02
SR01641
Typical S11 for the High Band LNA @ 3.75V for the High Band Receive Strong Signal Mode
24
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
1:
20.574Ω
–38.402Ω
1.55GHz
2:
18.104Ω
–22.765Ω
1.85GHz
3:
24.446Ω
–21.71Ω
1.95GHz
4:
20.975Ω
–20.711Ω
3.7486pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
Figure 42.
1999 Mar 02
SR01642
Typical S11 of the High Band LO @ 3.75V for the High Band Receive Normal Mode
25
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 2. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Receive Normal Mode
FREQ (MHz)
|S11| (U)
<S11 (DEG)
|S21| (U)
<S21 (DEG)
|S12| (U)
<S12 (DEG)
|S22| (U)
<S22 (DEG)
100
0.89
–15.49
8.70
–165.43
0.0027
108.66
0.97
51.38
150
0.87
–22.76
8.71
–179.74
0.0038
93.41
0.96
31.54
200
0.85
–29.87
8.53
170.16
0.0049
92.10
0.96
19.54
250
0.82
–37.01
8.33
161.71
0.0065
86.08
0.95
11.08
300
0.79
–43.99
8.12
154.61
0.0071
82.95
0.94
4.19
350
0.75
–50.47
7.75
148.41
0.0078
69.24
0.93
–1.56
400
0.73
–56.72
7.49
144.24
0.0072
71.73
0.91
–5.69
450
0.70
–63.14
7.24
139.14
0.0078
76.99
0.91
–10.06
500
0.67
–69.13
6.97
134.34
0.0071
82.72
0.90
–13.94
550
0.63
–75.14
6.71
130.13
0.0078
84.15
0.89
–17.69
600
0.61
–81.15
6.45
126.62
0.0074
87.69
0.88
–21.14
650
0.59
–86.84
6.23
122.98
0.0079
91.07
0.88
–24.77
700
0.57
–92.30
6.03
119.16
0.0085
103.71
0.87
–28.09
750
0.55
–97.73
5.80
115.55
0.0098
103.73
0.87
–31.38
800
0.54
–102.99
5.56
111.56
0.0107
113.57
0.86
–34.82
850
0.53
–108.21
5.24
107.93
0.0121
115.45
0.86
–38.18
900
0.52
–113.27
4.97
105.40
0.0134
124.98
0.86
–41.51
950
0.51
–118.12
4.75
104.08
0.0155
127.67
0.86
–44.72
1000
0.51
–122.43
4.62
102.52
0.0175
128.87
0.86
–47.96
1050
0.51
–126.73
4.52
99.54
0.0193
128.89
0.86
–51.12
1100
0.50
–130.83
4.34
96.33
0.0217
129.85
0.86
–54.20
1150
0.51
–134.58
4.13
93.78
0.0238
128.74
0.86
–57.23
1200
0.51
–138.20
3.94
91.13
0.0269
131.20
0.86
–60.03
1250
0.51
–141.69
3.72
88.49
0.0297
130.22
0.87
–62.72
1300
0.51
–145.12
3.46
86.84
0.032
128.07
0.87
–65.57
1350
0.52
–148.25
3.25
86.69
0.033
127.73
0.87
–68.10
1999 Mar 02
26
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 3. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Strong Signal Mode
FREQ (MHz)
|S11| (U)
<S11 (DEG)
|S21| (U)
<S21 (DEG)
|S12| (U)
<S12 (DEG)
|S22| (U)
<S22 (DEG)
100
150
0.94
–8.77
0.05
88.15
0.049
84.08
0.96
50.15
0.92
–12.15
0.07
68.32
0.069
63.51
0.95
30.01
200
0.90
–15.01
0.08
55.23
0.082
47.79
0.93
17.79
250
0.88
–17.75
0.09
46.14
0.090
37.04
0.92
9.22
300
0.87
–20.37
0.09
39.25
0.094
28.09
0.91
2.68
350
0.85
–23.15
0.10
33.96
0.099
21.40
0.90
–2.68
400
0.85
–25.85
0.10
29.86
0.100
14.70
0.89
–7.56
450
0.84
–28.73
0.10
26.35
0.102
9.32
0.88
–12.06
500
0.83
–31.65
0.10
23.06
0.103
4.37
0.88
–16.23
550
0.82
–34.56
0.10
20.07
0.103
–0.41
0.87
–20.35
600
0.81
–38.02
0.10
17.87
0.103
–5.17
0.86
–24.23
650
0.80
–41.41
0.10
15.28
0.104
–9.07
0.85
–28.29
700
0.80
–44.70
0.10
12.27
0.104
–13.29
0.85
–32.11
750
0.79
–48.40
0.10
9.05
0.103
–18.00
0.84
–35.85
800
0.78
–52.30
0.10
5.24
0.103
–23.07
0.83
–39.74
850
0.78
–56.58
0.10
2.20
0.102
–28.68
0.83
–43.59
900
0.77
–60.63
0.09
–0.26
0.099
–33.94
0.82
–47.19
950
0.77
–64.88
0.09
–2.21
0.094
–39.65
0.82
–50.95
1000
0.76
–69.05
0.09
–4.19
0.090
–44.01
0.81
–54.29
1050
0.76
–73.21
0.09
–7.58
0.086
–47.95
0.81
–57.67
1100
0.76
–77.26
0.09
–11.56
0.084
–52.34
0.81
–60.86
1150
0.76
–81.34
0.08
–16.05
0.080
–58.43
0.80
–64.05
1200
0.76
–85.37
0.08
–19.50
0.076
–62.90
0.80
–66.96
1250
0.76
–89.33
0.07
–23.71
0.074
–68.35
0.80
–69.89
1300
0.76
–93.28
0.07
–27.20
0.072
–75.17
0.79
–72.64
1350
0.75
–97.37
0.06
–31.20
0.068
–82.58
0.79
–75.21
1999 Mar 02
27
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 4. Typical S-Parameters of Low Band LNA at VCC = +3.75V, LB Transmit On (Analog) Mode
FREQ (MHz)
|S11| (U)
<S11 (DEG)
|S21| (U)
<S21 (DEG)
|S12| (U)
<S12 (DEG)
|S22| (U)
<S22 (DEG)
100
0.80
–18.49
16.98
–170.30
0.003
121.40
0.95
50.55
150
0.76
–27.25
17.07
173.61
0.004
100.49
0.94
30.44
200
0.72
–35.34
16.62
161.95
0.005
87.01
0.93
18.29
250
0.67
–43.14
15.82
152.47
0.005
88.74
0.92
9.80
300
0.62
–50.04
14.89
144.65
0.007
80.87
0.91
2.68
350
0.57
–55.41
13.73
138.33
0.007
64.95
0.89
–2.99
400
0.55
–61.58
12.97
134.43
0.007
90.16
0.87
–6.38
450
0.51
–67.13
12.27
129.49
0.007
90.97
0.86
–10.66
500
0.47
–72.08
11.53
125.20
0.008
89.19
0.85
–14.35
550
0.44
–76.94
10.83
121.58
0.009
96.23
0.84
–17.92
600
0.42
–81.92
10.24
118.69
0.009
98.83
0.84
–21.27
650
0.40
–86.62
9.78
115.74
0.009
102.03
0.83
–24.85
700
0.38
–91.05
9.32
112.66
0.010
107.95
0.83
–28.04
750
0.37
–95.76
8.89
109.66
0.012
108.58
0.83
–31.27
800
0.36
–100.37
8.46
106.44
0.012
114.73
0.82
–34.68
850
0.35
–105.06
7.92
103.48
0.014
115.62
0.82
–38.05
900
0.34
–109.12
7.39
101.58
0.015
116.40
0.82
–41.29
950
0.34
–113.76
7.02
100.76
0.017
116.04
0.82
–44.70
1000
0.34
–117.50
6.81
99.95
0.019
122.13
0.82
–47.58
1050
0.34
–121.31
6.64
97.57
0.021
122.61
0.83
–50.73
1100
0.34
–124.67
6.36
94.92
0.023
121.36
0.83
–53.76
1150
0.35
–127.76
6.09
92.79
0.025
123.58
0.83
–56.81
1200
0.35
–130.93
5.80
90.59
0.026
125.25
0.83
–59.62
1250
0.36
–133.78
5.48
88.25
0.030
123.53
0.84
–62.32
1300
0.36
–136.90998
5.10
87.00
0.03
122.37
0.84
–65.27
1350
0.37
–140.02216
4.82
87.05
0.03
122.64
0.85
–68.06
1999 Mar 02
28
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 5. Typical S-Parameters of Low Band Mixer Input at VCC = +3.75V, LB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
100
0.85
–13.10
150
0.84
–17.65
200
0.85
–23.74
250
0.85
–29.63
300
0.85
–37.49
350
0.85
–45.23
400
0.85
–54.50
450
0.80
–64.14
500
0.75
–73.90
550
0.70
–82.34
600
0.67
–91.47
650
0.57
–100.54
700
0.53
–106.44
750
0.51
–114.37
800
0.49
–123.87
850
0.48
–132.17
900
0.49
–141.42
950
0.47
–150.07
1000
0.47
–160.64
1050
0.47
–169.49
1100
0.47
–179.79
1150
0.48
171.14
1200
0.48
162.01
1250
0.49
154.08
1300
0.50
144.55
1350
0.51
136.11
29
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 6. Typical S-Parameters of Low Band LO Input at VCC = +3.75V, LB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
100
0.76
–55.83
150
0.73
–78.35
200
0.70
–98.64
250
0.68
–116.73
300
0.66
–133.17
350
0.64
–147.82
400
0.61
–161.51
450
0.59
–173.68
500
0.55
173.99
550
0.51
162.15
600
0.46
150.30
650
0.38
140.69
700
0.29
132.76
750
0.18
131.71
800
0.10
171.44
850
0.18
–150.19
900
0.31
–149.41
950
0.42
–157.78
1000
0.50
–166.73
1050
0.57
–175.14
1100
0.61
177.49
1150
0.64
170.74
1200
0.66
164.22
1250
0.68
157.61
1300
0.68
150.89
1350
0.65
144.80
30
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 7. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
1400
0.58
–135.43
1450
0.59
–138.48
1500
0.59
–141.42
1550
0.60
–144.44
1600
0.62
–146.93
1650
0.63
–149.85
1700
0.65
–154.08
1750
0.66
–158.38
1800
0.66
–162.67
1850
0.66
–167.09
1900
0.65
–170.72
1950
0.63
–172.76
2000
0.64
–175.38
2050
0.61
–178.44
2100
0.60
–179.38
2150
0.59
179.32
2200
0.58
178.44
2250
0.58
177.61
2300
0.57
176.29
2350
0.57
175.39
2400
0.57
174.35
2450
0.56
173.01
2500
0.57
172.12
2550
0.57
170.91
2600
0.56
169.89
2650
0.56
168.41
31
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 8. Typical S-Parameters of HB LNA Input at VCC = +3.75V, HB Strong Signal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
1400
0.81
–73.99
1450
0.81
–77.23
1500
0.81
–80.62
1550
0.80
–84.00
1600
0.80
–87.02
1650
0.80
–90.35
1700
0.79
–93.54
1750
0.79
–96.48
1800
0.79
–100.32
1850
0.79
–103.54
1900
0.79
–107.23
1950
0.79
–110.05
2000
0.77
–113.75
2050
0.78
–114.79
2100
0.79
–117.61
2150
0.79
–120.50
2200
0.80
–122.65
2250
0.79
–125.91
2300
0.80
–128.17
2350
0.79
–130.64
2400
0.79
–133.19
2450
0.79
–135.66
2500
0.79
–138.22
2550
0.79
–140.56
2600
0.79
–143.22
2650
0.79
–145.47
32
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Table 9. Typical S-Parameters of HB LO Input at VCC = +3.75V, HB Receive Normal Mode
1999 Mar 02
FREQ (MHz)
|S11| (U)
<S11 (DEG)
1400
0.62
–87.50
1450
0.61
–90.87
1500
0.60
–94.44
1550
0.60
–98.86
1600
0.59
–102.10
1650
0.59
–106.34
1700
0.58
–110.67
1750
0.57
–114.48
1800
0.57
–119.86
1850
0.55
–126.14
1900
0.48
–134.66
1950
0.43
–123.95
2000
0.47
–126.26
2050
0.48
–128.33
2100
0.50
–131.34
2150
0.50
–135.52
2200
0.50
–138.76
2250
0.50
–142.68
2300
0.50
–146.60
2350
0.49
–150.21
2400
0.49
–154.30
2450
0.48
–157.62
2500
0.47
–161.79
2550
0.46
–166.32
2600
0.45
–170.41
2650
0.43
–174.86
33
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
1999 Mar 02
34
SOT313-2
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
NOTES
1999 Mar 02
35
Philips Semiconductors
Product specification
Dual-band RF front-end
SA1920
Data sheet status
Data sheet
status
Product
status
Definition [1]
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
 Copyright Philips Electronics North America Corporation 1999
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 03–99
Document order number:
1999 Mar 02
36
9397 750 05354