1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch ADG636 FEATURES FUNCTIONAL BLOCK DIAGRAM 1 pC charge injection ±2.7 V to ±5.5 V dual supply +2.7 V to +5.5 V single supply Automotive temperature range: −40°C to +125°C 100 pA (maximum at 25°C) leakage currents 85 Ω typical on resistance Rail-to-rail operation Fast switching times Typical power consumption (<0.1 μW) TTL-/CMOS-compatible inputs 14-lead TSSOP package ADG636 S1A 4 S1B 5 6 D1 9 D2 S2A 11 S2B 10 1 14 2 A0 A1 EN 02754-001 LOGIC Figure 1. APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered instruments Communication systems Sample-and-hold systems Remote-powered equipment Audio and video signal routing Relay replacement Avionics GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions. 1. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V. 2. 3. 4. 5. Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range. Leakage current <0.25 nA maximum at 85°C. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply. Automotive temperature range: −40°C to +125°C. Small 14-lead TSSOP package. This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package. Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2002–2009 Analog Devices, Inc. All rights reserved. ADG636 TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................9 Applications ....................................................................................... 1 ESD Caution...................................................................................9 Functional Block Diagram .............................................................. 1 Pin Configuration and Function Descriptions........................... 10 General Description ......................................................................... 1 Typical Performance Characteristics ........................................... 11 Product Highlights ........................................................................... 1 Test Circuits ..................................................................................... 13 Revision History ............................................................................... 2 Terminology .................................................................................... 15 Specifications..................................................................................... 3 Outline Dimensions ....................................................................... 16 Dual Supply ................................................................................... 3 Ordering Guide .......................................................................... 16 Single Supply ................................................................................. 5 REVISION HISTORY 9/09—Rev. A to Rev. B Changes to Table 6 .......................................................................... 10 8/08—Rev. 0 to Rev. A Updated Format .................................................................. Universal Changes to Analog Switch Parameter ............................................ 3 Changes to Analog Switch Parameter ............................................ 5 Changes to Analog Switch Parameter ............................................ 7 Change to IDD Parameter.................................................................. 8 Changes to Absolute Maximum Ratings ....................................... 9 Added Table 5; Renumbered Sequentially .................................. 10 Moved Truth Table ......................................................................... 10 Added Endnote to Table 6 ............................................................. 10 Changes to Figure 19 ...................................................................... 13 Updated Outline Dimensions ....................................................... 16 Changes to Ordering Guide .......................................................... 16 1/02—Revision 0: Initial Version Rev. B | Page 2 of 16 ADG636 SPECIFICATIONS DUAL SUPPLY VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ΔRON On-Resistance Flatness, RFLAT(ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Drain Off Leakage, ID (Off ) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH +25°C 85 115 2 4 25 40 ±0.01 ±0.1 ±0.01 ±0.1 ±0.01 ±0.1 −40°C to +85°C −40°C to +125°C Unit VSS to VDD V 140 160 Ω typ Ω max Ω typ 5.5 6.5 55 60 ±0.25 ±2 ±0.25 ±2 ±0.25 ±6 2.4 0.8 2 70 ns typ 0.005 100 tON Enable 150 ns max ns typ 170 190 55 80 Break-Before-Make Time Delay, tBBM 120 100 135 tOFF Enable nA typ nA max nA typ nA max nA typ nA max V min V max μA typ μA max pF typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 1 Transition Time Ω max Ω typ Ω max ns max ns typ 90 100 20 ns max ns typ 10 ns min Charge Injection −1.2 pC typ Off Isolation −65 dB typ Channel-to-Channel Crosstalk −65 dB typ Bandwidth −3 dB 610 MHz typ Rev. B | Page 3 of 16 Test Conditions/Comments VDD = +4.5 V, VSS = −4.5 V VS = ±3 V, IDS = −1 mA, Figure 14 VS = ±3 V, IDS = −1 mA, Figure 14 VS = ±3 V, IDS = −1 mA VS = ±3 V, IDS = −1 mA VS = ±3 V, IDS = −1 mA VS = ±3 V, IDS = −1 mA VDD = +5.5 V, VSS = −5.5 V VS = ±4.5 V, VD = 4.5 V, Figure 15 VS = ±4.5 V, VD = 4.5 V, Figure 15 VS = ±4.5 V, VD = 4.5 V, Figure 15 VS = ±4.5 V, VD = 4.5 V, Figure 15 VS = VD = ±4.5 V, Figure 16 VS = VD = ±4.5 V, Figure 16 VIN = VINL or VINH VIN = VINL or VINH VS1A = +3 V, VS1B = −3 V, RL = 300 Ω, CL = 35 pF, Figure 17 VS1A = +3 V, VS1B = −3 V, RL = 300 Ω, CL = 35 pF, Figure 17 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 VS = 0 V, RS = 0 Ω, CL = 1 nF, Figure 20 RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 21 RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 23 RL = 50 Ω, CL = 5 pF, Figure 22 ADG636 Parameter CS (Off ) CD (Off ) CD (On), CS (On) POWER REQUIREMENTS IDD +25°C 5 8 8 −40°C to +85°C −40°C to +125°C 0.001 1.0 ISS 0.001 1.0 1 Guaranteed by design; not subject to production test. Rev. B | Page 4 of 16 Unit pF typ pF typ pF typ μA typ μA max μA typ μA max Test Conditions/Comments f = 1 MHz f = 1 MHz f = 1 MHz VDD = +5.5 V, VSS = −5.5 V Digital inputs = 0 V or 5.5 V Digital inputs = 0 V or 5.5 V Digital inputs = 0 V or 5.5 V Digital inputs = 0 V or 5.5 V ADG636 SINGLE SUPPLY VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted. Table 2. Parameter ANALOG SWITCH Analog Signal Range +25°C On Resistance, RON 210 290 3 On Resistance Match Between Channels, ΔRON LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH −40°C to +125°C 0 V to VDD 350 380 12 13 ±0.01 ±0.1 Drain Off Leakage, ID (Off ) −40°C to +85°C ±0.25 ±2 ±0.01 ±0.25 ±2 nA max ±0.01 ±0.1 ±0.25 ±6 nA typ nA max 2 V min V max μA typ μA max pF typ 90 ns typ 0.005 210 ns max ns typ 235 275 70 105 Break-Before-Make Time Delay, tBBM 185 135 180 tOFF Enable nA max ±0.1 150 tON Enable Ω typ Ω max Ω typ Ω max nA typ 2.4 0.8 ns max ns typ 120 135 30 ns max ns typ 10 ns min Charge Injection 0.3 pC typ Off Isolation −60 dB typ Channel-to-Channel Crosstalk −65 dB typ Bandwidth −3 dB CS (Off ) CD (Off ) CD (On), CS (On) 530 5 8 8 MHz typ pF typ pF typ pF typ Rev. B | Page 5 of 16 Test Conditions/Comments V nA typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 1 Transition Time Unit VDD = 4.5 V, VSS = 0 V VS = 3.5 V, IDS = −1 mA, Figure 14 VS = 3.5 V, IDS = −1 mA, Figure 14 VS = 3.5 V, IDS = −1 mA VS = 3.5 V, IDS = −1 mA VDD = 5.5 V VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 VS = VD = 4.5 V/1 V, Figure 16 VS = VD = 4.5 V/1 V, Figure 16 VIN = VINL or VINH VIN = VINL or VINH VS1A = 3 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 VS1A = 3 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 VS = 0 V, RS = 0 Ω, CL = 1 nF, Figure 20 RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 21 RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 23 RL = 50 Ω, CL = 5 pF, Figure 22 f = 1 MHz f = 1 MHz f = 1 MHz ADG636 Parameter POWER REQUIREMENTS IDD +25°C −40°C to +85°C −40°C to +125°C 0.001 1.0 1 Guaranteed by design; not subject to production test. Rev. B | Page 6 of 16 Unit μA typ μA max Test Conditions/Comments VDD = 5.5 V Digital inputs = 0 V or 5.5 V Digital inputs = 0 V or 5.5 V ADG636 VDD = 3 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted. Table 3. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On Resistance Match Between Channels, ΔRON LEAKAGE CURRENTS Source Off Leakage, IS (Off ) +25°C Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH −40°C to +125°C 0 V to VDD 380 420 460 5 ±0.01 ±0.1 Drain Off Leakage, ID (Off ) −40°C to +85°C ±0.25 ±2 ±0.01 ±0.25 ±2 nA max ±0.01 ±0.1 ±0.25 ±6 nA typ nA max 0.005 2 170 Break-Before-Make Time Delay, tBBM 390 450 ns max ns typ 460 530 110 175 V min V max μA typ μA max pF typ ns typ 250 360 tOFF Enable nA max ±0.1 320 tON Enable Ω typ Ω typ nA typ 2.0 0.8 ns max ns typ 205 230 80 ns max ns typ 10 ns min Charge Injection 0.6 pC typ Off Isolation −60 dB typ Channel-to-Channel Crosstalk −65 dB typ Bandwidth −3 dB CS (Off ) CD (Off ) CD (On), CS (On) 530 5 8 8 MHz typ pF typ pF typ pF typ Rev. B | Page 7 of 16 Test Conditions/Comments V nA typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 1 Transition Time Unit VDD = 2.7 V, VSS = 0 V VS = 1.5 V, IDS = −1 mA, Figure 14 VS = 1.5 V, IDS = −1 mA VDD = 3.3 V VS = 1 V/3 V, VD = 3 V/1 V, Figure 15 VS = 1 V/3 V, VD = 3 V/1 V, Figure 15 VS = 1 V/3 V, VD = 3 V/1 V, Figure 15 VS = 1 V/3 V, VD = 3 V/1 V, Figure 15 VS = VD = 1 V/3 V, Figure 16 VS = VD = 1 V/3 V, Figure 16 VIN = VINL or VINH VIN = VINL or VINH VS1A = 2 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 VS1A = 2 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 RL = 300 Ω, CL = 35 pF, VS = 2 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 2 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 2 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS = 2 V, Figure 19 RL = 300 Ω, CL = 35 pF, VS1 = 2 V, Figure 18 RL = 300 Ω, CL = 35 pF, VS1 = 2 V, Figure 18 VS = 0 V, RS = 0 Ω, CL = 1 nF, Figure 20 RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 21 RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 23 RL = 50 Ω, CL = 5 pF, Figure 22 f = 1 MHz f = 1 MHz f = 1 MHz ADG636 Parameter POWER REQUIREMENTS IDD +25°C −40°C to +85°C −40°C to +125°C 0.001 1.0 1 Guaranteed by design; not subject to production test. Rev. B | Page 8 of 16 Unit μA typ μA max Test Conditions/Comments VDD = 3.3 V Digital inputs = 0 V or 3.3 V Digital inputs = 0 V or 3.3 V ADG636 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 4. Parameter VDD to VSS VDD to GND VSS to GND Analog Inputs1 Digital Inputs1 Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle Maximum) Continuous Current, S or D Operating Temperature Range Storage Temperature Range Junction Temperature TSSOP Package θJA Thermal Impedance θJC Thermal Impedance Lead Soldering Lead Temperature, Soldering (10 sec) IR Reflow, Peak Temperature (<20 sec) Pb-Free Soldering Reflow, Peak Temperature Time at Peak Temperature 1 Rating 13 V −0.3 V to +6.5 V +0.3 V to −6.5 V VSS − 0.3 V to VDD + 0.3 V −0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 20 mA Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. ESD CAUTION 10 mA −40°C to +125°C −65°C to +150°C 150°C 150°C/W 27°C/W 300°C 220°C 260(+0/−5)°C 20 sec to 40 sec Overvoltages at EN, A0, A1, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given. Rev. B | Page 9 of 16 ADG636 A0 1 14 A1 EN 2 13 GND VSS 3 ADG636 12 4 TOP VIEW (Not to Scale) VDD S1A 11 S2A S1B 5 10 S2B D1 6 9 D2 NC 7 8 NC NC = NO CONNECT 02754-002 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS Figure 2. Pin Configuration Table 5. Pin Function Descriptions Pin number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Mnemonic A0 EN VSS S1A S1B D1 NC NC D2 S2B S2A VDD GND A1 Description Digital Input (LSB). Active High Digital Input. Negative Power Supply. For single-supply operation, connect this pin to GND. Source Terminal. Can be an input or output. Source Terminal. Can be an input or output. Drain Terminal. Can be an input or output. Not Electrically Connected. Not Electrically Connected. Drain Terminal. Can be an input or output. Source Terminal. Can be an input or output. Source Terminal. Can be an input or output. Positive Power Supply. Ground (0 V) Power Supply. Digital Input (MSB). Table 6. Truth Table A1 X1 0 0 1 1 1 A0 X1 0 1 0 1 EN 0 1 1 1 1 On Switch None S1A, S2A S1B, S2A S1A, S2B S1B, S2B X = logic state doesn’t matter; it can be either 0 or 1. Rev. B | Page 10 of 16 ADG636 TYPICAL PERFORMANCE CHARACTERISTICS 350 VDD, VSS = ±2.5V ON RESISTANCE (Ω) 150 VDD, VSS = ±3.3V 100 VDD, VSS = ±5V 50 –3 –2 –1 0 1 2 3 4 5 VD, VS (V) 0 2.5 3.0 3.5 4.0 4.5 5.0 ID (OFF) 1 CURRENT (nA) VDD = 4.5V 200 IS (OFF) –3 –5 ID (ON), IS (ON) –7 –9 VDD = 3.3V –11 VDD = 5V 100 VDD = +5V VSS = –5V –13 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 –15 02754-004 0.5 VD, VS (V) 0 20 40 60 80 TEMPERATURE (°C) 100 120 Figure 7. Leakage Currents vs. Temperatures, Dual Supply Figure 4. On Resistance vs. VD (VS), Single Supply 5 VDD = +5V VSS = –5V IS (OFF) 3 1 140 –1 120 TA = +125°C 100 CURRENT (nA) ON RESISTANCE (Ω) 2.0 –1 300 TA = +85°C 80 60 ID (OFF) –3 –5 ID (ON), IS (ON) –7 –9 40 –4 –3 –2 –1 –11 TA = –40°C 0 1 VD, VS (V) VDD = 5V VSS = 0V –13 2 3 4 5 02754-005 TA = +25°C 20 0 –5 1.5 3 VDD = 3V 160 1.0 5 TA = 25°C VSS = 0V 400 180 0.5 Figure 6. On Resistance vs. VD (VS) for Different Temperatures, Single Supply VDD = 2.7V 0 0 TA = –40°C TA = +25°C VD, VS (V) 600 ON RESISTANCE (Ω) 100 0 Figure 3. On Resistance vs. VD (VS), Dual Supply 500 TA = +125°C T = +85°C A 150 02754-003 –4 200 50 VDD, VSS = ±4.5V 0 –5 250 02754-007 ON RESISTANCE (Ω) 300 VDD, VSS = ±3V 200 VDD = 5V VSS = 0V 02754-006 TA = 25°C Figure 5. On Resistance vs. VD (VS) for Different Temperatures, Dual Supply Rev. B | Page 11 of 16 –15 0 20 40 60 80 TEMPERATURE (°C) 100 120 Figure 8. Leakage Currents vs. Temperature, Single Supply 02754-008 250 ADG636 1.0 0 TA = 25°C 0.5 0 –0.5 VDD = +5V VSS = 0V –1.0 TA = 25°C –20 ATTENUATION (dB) CHARGE INJECTION (pC) –10 VDD = +3V VSS = 0V VDD = +5V VSS = –5V VDD = +5V VSS = 0V –30 –40 –50 VDD = +5V VSS = –5V –60 –70 –1.5 –4 –3 –2 –1 0 VS (V) 1 2 3 4 –90 0.3 02754-009 –2.0 –5 5 1 Figure 9. Charge Injection vs. Source Voltage 1000 0 TA = 25 C –2 200 VDD = +5V VSS = –5V 150 tON tOFF –20 0 20 40 60 TEMPERATURE (°C) 80 100 120 VDD = +5V VSS = 0V –10 –12 –18 0.3 TA = 25 C –20 VDD = +5V VSS = 0V –40 VDD = +5V VSS = –5V –50 –60 –70 10 100 FREQUENCY (MHz) 1000 02754-011 –80 1 10 100 Figure 13. On Response vs. Frequency 0 –30 1 FREQUENCY (MHz) Figure 10. tON/tOFF Enable Timing vs. Temperature –90 0.3 –8 –16 VDD = +5V VSS = –5V 02754-010 VDD = +5V VSS = 0V –10 –6 –14 50 0 –40 VDD = +5V VSS = –5V Figure 11. Off Isolation vs. Frequency Rev. B | Page 12 of 16 1000 02754-013 100 TA = 25 C –4 VDD = +5V VSS = 0V ATTENUATION (dB) TIME (ns) 100 Figure 12. Crosstalk vs. Frequency 250 ATTENUATION (dB) 10 FREQUENCY (MHz) 02754-012 –80 ADG636 TEST CIRCUITS IDS V1 D ID (OFF) VD VS Figure 14. On Resistance S NC A NC = NO CONNECT 0.1µF VDD VS A1 A0 50Ω ADDRESS DRIVE (VIN) VSS S1A VS1A S1B VS1B 3V 90% RL 300Ω GND 90% tTRANSITION VOUT D1 EN 50% 50% 0V VOUT 2.4V tTRANSITION CL 35pF Figure 17. Transition Time, tTRANSITION VDD VSS 0.1µF 0.1µF VS S1A A0 A1 50Ω ADDRESS DRIVE (VIN) VSS VDD VS 3V 0V S1B VOUT GND 80% tBBM CL 35pF 02754-018 RL 300Ω EN 80% VOUT D1 2.4V Figure 18. Break-Before-Make Delay, tBBM VDD VSS 0.1µF 0.1µF ENABLE DRIVE (VIN) VSS S1A A0 A1 VS 3V 50% S1B VOUT OUTPUT 90% 90% 0V EN VS 50% 0V VOUT D1 50Ω GND RL 300Ω CL 35pF Figure 19. Enable Delay, tON (EN), tOFF (EN) Rev. B | Page 13 of 16 tON (EN) tOFF (EN) 02754-019 VDD A Figure 16. On Leakage VSS 0.1µF ID (ON) VD Figure 15. Off Leakage VDD D 02754-017 RON = V1/IDS S 02754-016 A 02754-014 VS D 02754-015 IS (OFF) S ADG636 VDD VSS VDD VSS S D VOUT VOUT CL 1nF VS VIN SW OFF SW OFF SW ON DECODER GND SW ON SW OFF SW OFF CHARGE INJECTION = ΔVOUT × CL EN Figure 20. Charge Injection VDD VSS 0.1µF 0.1µF VDD NETWORK ANALYZER VSS S 50Ω 50Ω VS D RL 50Ω OFF ISOLATION = 20 log 02754-021 GND VOUT VOUT VS Figure 21. Off Isolation VDD VSS 0.1µF 0.1µF VDD NETWORK ANALYZER VSS S 50Ω VS D GND INSERTION LOSS = 20 log VOUT 02754-022 RL 50Ω VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 22. Bandwidth VDD VSS 0.1µF NETWORK ANALYZER 0.1µF VDD VSS S1 VOUT RL 50Ω D S2 RL 50Ω 50Ω GND VS CHANNEL-TO-CHANNEL CROSSTALK = 20 log VOUT VS Figure 23. Channel-to-Channel Crosstalk Rev. B | Page 14 of 16 02754-020 VIN A1 A2 02754-023 RS ΔVOUT QINJ = CL × ΔVOUT ADG636 TERMINOLOGY VDD Most positive supply potential. IINL(IINH) Input current of the digital input. VSS Most negative power supply in a dual-supply application. In single-supply applications, this should be tied to ground at the device. CS (Off) Channel input capacitance for the off condition. CD (Off) Channel output capacitance for the off condition. GND Ground (0 V) reference. CD (On), CS (On) On switch capacitance. IDD Positive supply current. CIN Digital input capacitance. ISS Negative supply current. tON (EN) Delay time between the 50% and 90% points of the digital input and the switch on condition. S Source terminal. May be an input or output. tOFF (EN) Delay time between the 50% and 90% points of the digital input and the switch off condition. D Drain terminal. May be an input or output. tTRANSITION Delay time between the 50% and 90% points of the digital input and the switch on condition when switching from one address state to another. RON Ohmic resistance between Terminal D and Terminal S. ΔRON On resistance match between any two channels (that is, RON max − RON min). RFLAT(ON) Flatness is defined as the difference between the maximum and minimum values of on resistance as measured over the specified analog signal range. IS (Off) Source leakage current with the switch off. ID (Off) Drain leakage current with the switch off. ID (On), IS (On) Channel leakage current with the switch on. VD, VS Analog voltage on Terminal D and Terminal S. VINL Maximum input voltage for Logic 0. tBBM Off time or on time measured between the 80% points of both switches when switching from one address state to another. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an off switch. Bandwidth The frequency response of the on switch. Insertion Loss Loss due to the on resistance of the switch. VINH Minimum input voltage for Logic 1. Rev. B | Page 15 of 16 ADG636 OUTLINE DIMENSIONS 5.10 (0.201) 5.00 (0.197) 4.90 (0.193) 14 8 4.50 (0.177) 4.40 (0.173) 4.30 (0.169) 6.40 (0.252) BSC 1 7 PIN 1 1.05 (0.041) 1.00 (0.039) 0.80 (0.031) 0.65 (0.025) BSC 0.15 (0.006) 0.05 (0.002) COPLANARITY 0.10 (0.004) 0.30 (0.012) 0.19 (0.007) 1.20 (0.047) MAX 0.20 (0.008) 0.09 (0.003) SEATING PLANE 8° 0° 0.75 (0.029) 0.60 (0.023) 0.45 (0.018) 061908-A COMPLIANT TO JEDEC STANDARDS MO-153-AB-1 CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 24. 14-Lead Thin Shrink Small Outline Package [TSSOP] (RU-14) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model ADG636YRU ADG636YRU-REEL ADG636YRUZ 1 ADG636YRUZ-REEL1 ADG636YRUZ-REEL71 1 Temperature Range −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C Package Description 14-Lead Thin Shrink Small Outline Package [TSSOP] 14-Lead Thin Shrink Small Outline Package [TSSOP] 14-Lead Thin Shrink Small Outline Package [TSSOP] 14-Lead Thin Shrink Small Outline Package [TSSOP] 14-Lead Thin Shrink Small Outline Package [TSSOP] Z = RoHS Compliant Part. ©2002–2009 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D02754-0-9/09(B) Rev. B | Page 16 of 16 Package Option RU-14 RU-14 RU-14 RU-14 RU-14