H1061 TRIPLE DIFFUSED SILICON NPN TRANSISTOR … designed for low frequency power amplifier MAXIMUM RATINGS Symbol Value Unit Collector Base Voltage Characteristic VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Current (Peak) IC 8 A Collector power Dissipation PC 40 W Junction Temperature TJ 150 °C Storage Temperature Tstg -55~150 °C 1 : Base 2 : Collector (Heat Sink) 3 : Emitter Unit in mm TO-220AB Weight: 1.9g ELECTRICAL CHARACTERISTICS Characteristic Collector Cut Off Current Collector – Emitter Breakdown Voltage Symbol Test Condition Min. Typ. Max. Unit ICBO VCB = 80V, IE = 0A - - 100 µA V(BR)CEO IC = 50mA, IB = 0A 80 - - V VCE = 4V, IC = 1A 60 - 200 - VCE = 4V, IC = 0.1A 35 - - - - 1 V hFE DC Current Gain VCE(sat) IC = 2A, IB = 0.2A - Base Emitter Voltage VBE VCE = 4V, IC = 1A - - 1.5 V Transition Frequency fT VCE = 5V, IC = 0.5A - 10 - MHz VCB = 20V, IE = 0A, f=1MHz - 40 - Pf Collector Emitter Saturation Voltage Cob Collector Out put Capacitance HIGH POWER DISSIPATION MEDIUM SPEED POWER SWITCHING Classification of hFE Rank B C Range 60 to 120 100-200 TO – 220AB PMC reserves the right to make changes without further notice to any products herein. PMC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does PMC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the reader therefore we shall not undertake any responsibility for the exercise of rights by third parties. PMC Components Pte Ltd. , Singapore, 2000