ROHM 2SA2088_11

Medium power transistor (60V, 0.5A)
2SA2088
Dimensions (Unit : mm)
Features
1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and capacitance load.
4) Complements the 2SC5876
UMT3
2.0
0.9
0.2
0.3
0.7
(1)
0.65 0.65
1.3
0.15
0.1Min.
(2)
Applications
Small signal low frequency amplifier
High speed switching
2.1
1.25
(3)
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : VM
Structure
PNP Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
Code
T106
Basic ordering unit (pieces)
3000
2SA2088
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
VEBO
−6
V
DC
IC
−0.5
A
Pulsed
ICP
−1.0
A
PC
200
mW
Tj
150
°C
Tstg
−55 to 150
°C
Parameter
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
∗2
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
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○
1/3
2011.03 - Rev.B
2SA2088
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
−60
−60
−6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
−1.0
−1.0
Unit
V
V
V
μA
μA
Collector-emitter saturation voltage
VCE (sat)
−
−150
−500
mV
hFE
120
−
270
−
DC current gain
fT
−
400
−
MHz
Corrector output capacitance
Cob
−
10
−
pF
Turn-on time
Storage time
Fall time
ton
tstg
tf
−
−
−
35
100
60
−
−
−
ns
ns
ns
Transition frequency
Condition
IC= −1mA
IC= −100μA
IE= −100μA
VCB= −40V
VEB= −4V
IC= −100mA
IB= −10mA
VCE= −2V
IC= −50mA
VCE= −10V
IE=100mA
f=10MHz
VCB= −10V
IE=0A
f=1MHz
IC= −500mA
IB1= −50mA
IB2=50mA
VCC −25V
∗1
∗2
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
hFE RANK
Q
120−270
Electrical characteristic curves
1000
tstg
100
tf
ton
10
−0.01
−0.1
−0.01
−0.1
Ta=25°C
100
VCE= −5V
VCE= −3V
VCE= −2V
10
1
0.001
−1
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
Fig.2 DC Current Gain vs.
Collector Current (Ι)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−1
−0.1
−0.01
−0.001
−10
IC / IB=10 / 1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
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c 2011 ROHM Co., Ltd. All rights reserved.
○
−10
Ta=25°C
BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)
−10
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
Ta=125°C
Ta=25°C
Ta= −40°C
100
10
−0.001
−1
1000
VCE= −2V
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
Ta=25°C
VCC= −25V
IC / IB=10 / 1
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
SWITCHING TIME : (ns)
1000
−1
IC / IB=100/1
IC / IB=20/1
IC / IB=10/1
−0.1
−0.01
−0.001
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2/3
IC / IB=10 / 1
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.001
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
2011.03 - Rev.B
2SA2088
Data Sheet
1000
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.01
−0
−0.5
−1
−1.5
100
Ta=25°C
VCE= −10V
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
VCE= −2V
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT : IC (A)
−1
100
10
0.001
0.01
0.1
Fig.7 Grounded Emitter
Propagation Characteristics
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER CURRENT : IE (A)
BASE TO EMITTER VOLTAGE : VBE (V)
10
1
−0.1
1
Ta=25°C
f=1MHz
Fig.9 Collector Output Capacitance
Fig.8 Transition Frequency
Switching characteristics measurement circuits
RL=50Ω
IC
IB 1
VIN
PW
VCC −25V
IB 2
PW 50μs
DUTY CYCLE ≤ 1%
IB2
IB1
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM
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c 2011 ROHM Co., Ltd. All rights reserved.
○
Ton
Tstg
Tf
IC
10%
3/3
2011.03 - Rev.B
Notice
Notes
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R1120A