ROHM 2SC5826

Power transistor (60V, 3A)
2SC5826
Dimensions (Unit : mm)
Features
1) High speed switching.
(tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2073
ATV
(1) Emitter
(2) Collector
(3) Base
Applications
Low frequency amplifier
High speed switching
Taping specifications
Symbol : C5826
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
Code
TV2
Basic ordering unit (pieces)
2500
2SC5826
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
DC
IC
3
A
Pulsed
ICP
6
A
PC
Parameter
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1.0
W
tj
150
°C
tstg
−55 to 150
°C
∗
∗Pw=100ms
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2011.03 - Rev.B
2SC5826
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Min.
60
60
6
−
−
Typ.
−
−
−
−
−
Max.
−
−
−
1.0
1.0
Unit
V
V
V
μA
μA
Collector-emitter saturation voltage
VCE (sat)
−
200
500
mV
hFE
120
−
390
−
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
fT
−
200
−
MHz
Cob
−
20
−
pF
ton
tstg
tf
−
−
−
50
150
30
−
−
−
ns
ns
ns
Condition
IC=1mA
IC=100μA
IE=100μA
VCB=40V
VEB=4V
IC=2A
IB=0.2A
VCE=2V
IC=100mA
VCE=10V
IE= −100mA
f=10MHz
VCB=10V
IE=0mA
f=1MHz
IC=3A
IB1=300mA
IB2= −300mA
VCC 25V
∗1
∗1
∗2
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
hFE RANK
Q
120−270
R
180−390
Electrical characteristic curves
1000
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0
0.5
1
100
VCE=5V
VCE=3V
VCE=2V
10
1
0.001
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter
Propagation Characteristics
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
0.01
0.001
0.01
0.1
1
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
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c 2011 ROHM Co., Ltd. All rights reserved.
○
Ta=125°C
Ta=25°C
Ta= −40°C
10
1
0.001
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
10
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
10
0.01
VCE=2V
100
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
0.001
10
IC / IB=10 / 1
BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)
0.01
1000
Ta=25°C
DC CURRENT GAIN : hFE
VCE=2V
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (A)
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2/3
IC / IB=10 / 1
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
2011.03 - Rev.B
2SC5826
Data Sheet
100
100
10
1
0.001
0.01
0.1
1
10
1
0.1
10
1000
Ta=25°C
f=1MHz
1
10
ton
tf
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.9 Switching Time
Fig.8 Collector Output Capacitance
Fig.7 Transition Frequency
100
10
0.01
100
BASE TO COLLECTOR VOLTAGE : VCB (V)
EMITTER CURRENT : IE (A)
Ta=25°C
VCC=25V
IC / IB=10 / 1
tstg
SWITCHING TIME : (ns)
Ta=25°C
VCE=10V
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
TRANSITION FREQUENCY : fT (MHz)
1000
Switching characteristics measurement circuits
RL=8.3Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle ≤ 1%
IB1
IB2
Base current
waveform
90%
IC
Collector current
waveform
10%
ton
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c 2011 ROHM Co., Ltd. All rights reserved.
○
tstg
3/3
tf
2011.03 - Rev.B
Notice
Notes
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R1120A