STMICROELECTRONICS GW39NC60VD

STGW39NC60VD
N-CHANNEL 40A - 600V - TO-247
Very Fast PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: General Features
TYPE
STGW39NC60VD
■
■
■
■
■
■
Figure 1: Package
VCES VCE(sat) (Max)
@25°C
600V
IC
@100°C
< 2.5 V
40 A
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO
50 KHz
LOSSES INCLUDE DIODE RECOVERY
ENERGY
OFF LOSSES INCLUDE TAIL CURRENT
LOWER CRES / CIES RATIO
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■ MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGW39NC60VD
GW39NC60VD
TO-247
TUBE
Rev. 1
November 2005
This is a preliminary information on a new product now in development. Details are subject to change without notice.
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STGW39NC60VD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at 25°C (#)
70
A
IC
Collector Current (continuous) at 100°C (#)
40
A
Collector Current (pulsed)
100
A
ICM (1)
If
PTOT
Tstg
Tj
Diode RMS Forward Current at Tc = 25°C
40
A
Total Dissipation at TC = 25°C
215
W
Derating Factor
1.72
W/°C
– 55 to 150
°C
Storage Temperature
Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Max.
Unit
0.58
°C/W
Thermal Resistance Junction-case (Diode)
1.5
°C/W
Thermal Resistance Junction-ambient
50
°C/W
Rthj-case
Thermal Resistance Junction-case
Rthj-case
Rthj-amb
TL
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
Typ.
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 1mA, VGE = 0
Test Conditions
ICES
Collector-Emitter Leakage
Current (VCE = 0)
VGE = Max Rating, Tc=25°C
Tc=125°C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
Min.
Typ.
Max.
600
Unit
V
10
1
µA
mA
± 100
nA
Max.
Unit
5.75
V
2.5
V
V
Table 6: On
Symbol
VGE(th)
VCE(SAT)
Parameter
Gate Threshold Voltage
VCE= VGE, IC= 250µA
Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 30A, Tj= 25°C
VGE= 15V, IC= 30A,
Tj= 125°C
(#) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
CESAT ( M AX ) C C
2/10
Test Conditions
Min.
Typ.
3.75
1.8
1.7
STGW39NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs(1)
Forward Transconductance
VCE = 15V, IC= 30A
TBD
S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V, f = 1MHz, VGE = 0
TBD
TBD
TBD
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 390V, IC = 30A,
VGE = 15V,
(see Figure 5)
TBD
TBD
TBD
nC
nC
nC
ICL
Turn-Off SOA Minimum
Current
Vclamp = 480V , Tj = 150°C
RG = 100Ω, VGE= 15V
200
A
Table 8: Switching On
Symbol
Parameter
Test Conditions
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390V, IC = 30A
RG= 3.3Ω, VGE= 15V, Tj= 25°C
(see Figure 3)
td(on)
tr
(di/dt)on
Eon (2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
VCC = 390V, IC = 30A
RG= 3.3Ω, VGE= 15V,Tj= 125°C
(see Figure 3)
Min.
Typ.
TBD
TBD
TBD
TBD
Max.
Unit
TBD
ns
ns
A/µs
µJ
TBD
TBD
TBD
TBD
ns
ns
A/µs
µJ
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
Symbol
Parameter
tr(Voff)
Off Voltage Rise Time
td(off)
Turn-off Delay Time
tf
Eoff (3)
Ets
Current Fall Time
Total Switching Loss
Off Voltage Rise Time
td(off)
Turn-off Delay Time
Eoff (3)
Ets
Vcc = 390V, IC = 30A,
RGE = 3.3Ω , VGE = 15V
TJ = 25°C
(see Figure 3)
Turn-off Switching Loss
tr(Voff)
tf
Test Conditions
Vcc = 390V, IC = 30A,
RGE = 3.3Ω , VGE = 15V
Tj = 125°C
(see Figure 3)
Min.
Typ.
Max.
Unit
TBD
ns
TBD
ns
TBD
ns
TBD
TBD
µJ
TBD
TBD
µJ
TBD
ns
TBD
ns
TBD
ns
Turn-off Switching Loss
TBD
µJ
Total Switching Loss
TBD
µJ
Current Fall Time
(3)Turn-off losses include also the tail of the collector current.
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STGW39NC60VD
Table 10: Collector-Emitter Diode
Symbol
Vf
4/10
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
1.4
1.1
2.1
V
V
Forward On-Voltage
If = 30A
If = 30A, Tj = 125°C
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
If = 30A ,VR = 40V,
Tj = 25°C, di/dt = 100A/µs
(see Figure 6)
44
32
66
3
0.375
ns
ns
nC
A
trr
ta
Qrr
Irrm
S
Reverse Recovery Time
If = 30A ,VR = 40V,
Tj =125°C, di/dt = 100A/µs
(see Figure 6)
88
56
237
5.4
0.57
ns
ns
nC
A
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
STGW39NC60VD
Figure 3: Test Circuit for Inductive Load
Switching
Figure 5: Gate Charge Test Circuit
Figure 4: Switching Waveforms
Figure 6: Diode Recovery Times Waveform
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STGW39NC60VD
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
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STGW39NC60VD
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
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STGW39NC60VD
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
3.7
0.138
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
8/10
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.146
P025C/A
STGW39NC60VD
Table 11: Revision History
Date
Revision
17-Nov-2005
1
Description of Changes
First Release
9/10
STGW39NC60VD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
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