STMICROELECTRONICS STGP10NC60H

STGP10NC60H
N-CHANNEL 10A - 600V - TO-220
VERY FAST PowerMESH™ IGBT
TARGET SPECIFICATION
General features
Type
VCES
VCE(sat)
(Max)@ 25°C
IC
@100°C
STGP10NC60H
600V
< 2.5V
10A
■
LOWER ON-VOLTAGE DROP (Vcesat)
■
LOWER CRES / CIES RATIO (NO
CROSS-CONDUCTION SUSCEPTIBILITY)
■
VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
Description
3
1
2
TO-220
Internal schematic diagram
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™
IGBTs,
with
outstanding
performances. The suffix "H" identifies a family
optimized for high frequency applications in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Applications
■
HIGH FREQUENCY MOTOR CONTROLS
■
SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■
MOTOR DRIVERS
Order codes
Sales Type
Marking
Package
Packaging
STGP10NC60H
P10NC60H
TO-220
TUBE
November 2005
This is a preliminary information on a new product now in development. Details are subject to change without notice
Rev 1
1/9
www.st.com
9
STP10NC60H
1 Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
Unit
Collector-Emitter Voltage (VGS = 0)
600
V
IC Note 5
Collector Current (continuous) at TC = 25°C
20
A
IC Note 5
Collector Current (continuous) at TC = 100°C
10
A
Collector Current (pulsed)
40
W
VGE
Gate-Emitter Voltage
±20
A
PTOT
Total Dissipation at TC = 25°C
60
W
– 55 to 150
°C
300
°C
VCES
ICM Note 1
Tstg
Parameter
Storage Temperature
Tj
Operating Junction Temperature
Tl
Maximum Lead Temperature For Soldering
Purpose (for 10sec. 1.6 mm from case)
Table 2.
Thermal resistance
Rthj-case
Thermal Resistance Junction-case Max
2.08
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
2/9
STP10NC60H
2
2 Electrical characteristics
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3.
On/Off
Symbol
VBR(CES)
ICES
Parameter
Collector-Emitter Breakdown
Voltage
Collector cut-off Current
(VGE = 0)
Test Conditions
IC= 1mA, VGE= 0
VGE(th)
Gate Threshold Voltage
VCE= VGE, IC= 250µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 5A
VGE= 15V, IC= 5A, Tc= 125°C
gfs
Forward Transconductance
VCE = 15V, IC= 5A
Symbol
C ies
C oes
Cres
Qg
Qge
Qgc
Max.
600
Unit
V
10
VCE=Max Rating,TC= 125°C
VGE= ±20V , VCE= 0
Table 4.
Typ.
VCE= Max Rating,TC= 25°C
Gate-Emitter Leakage
Current (VCE = 0)
IGES
Min.
1
5
1.9
1.7
µA
mA
±100
nA
7
V
2.5
V
V
TBD
S
Dynamic
Parameter
Test Conditions
Input Capacitance
VCE = 25V, f = 1MHz,VGE = 0
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 390V, IC = 5A,
VGE = 15V,
(see Figure 2)
Min.
Typ.
Max.
Unit
TBD
TBD
TBD
pF
pF
pF
TBD
TBD
TBD
nC
nC
nC
3/9
STP10NC60H
2 Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Switching On/Off (inductive load)
Parameter
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Parameter
Eon Note 3
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
Ets
Eon Note 3
Eoff Note 4
Ets
Min.
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V, Tj= 25°C
(see Figure 3)
VCC = 390V, IC = 5A
RG= 10Ω, VGE= 15V, Tj=125°C
(see Figure 3)
Vcc = 390V, IC = 5A,
RGE = 10Ω , VGE = 15V,TJ=25°C
(see Figure 3)
Vcc = 390V, IC = 5A,
RGE=10Ω , VGE =15V, Tj=125°C
(see Figure 3)
Typ.
Max.
Unit
TBD
TBD
TBD
ns
ns
A/µs
TBD
TBD
TBD
ns
ns
A/µs
TBD
TBD
TBD
ns
ns
ns
TBD
TBD
TBD
ns
ns
ns
Switching energy (inductive load)
Symbol
Eoff Note 4
Test Conditions
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
Test Conditions
VCC = 390V, IC = 75A
RG= 10Ω, V GE= 15V, Tj= 25°C
(see Figure 3)
VCC = 390V, IC = 5A
RG= 10Ω, V GE= 15V, Tj= 125°C
(see Figure 3)
Min.
Typ.
Max.
Unit
TBD
TBD
TBD
µJ
µJ
µJ
TBD
TBD
TBD
µJ
µJ
µJ
(1)Pulse width limited by max. junction temperature
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(3) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
(4) Turn-off losses include also the tail of the collector current
(5) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
CESAT ( MAX ) C C
4/9
STP10NC60H
3
3 Test Circuits
Test Circuits
Figure 1.
Test Circuit for Inductive Load
Switching
Figure 3.
Switching Waveform
Figure 2.
Gate Charge Test Circuit
5/9
4 Package mechanical data
4
STP10NC60H
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
6/9
STP10NC60H
4 Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
7/9
STP10NC60H
5 Revision History
5
8/9
Revision History
Date
Revision
18-Nov-2005
1
Changes
Initial release.
STP10NC60H
5 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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