STMICROELECTRONICS STGP7NB60KDFP

STGP7NB60KD STGB7NB60KD
STGP7NB60KDFP
N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK
PowerMESH™ IGBT
ADVANCED DATA
■
■
■
■
■
■
■
■
TYPE
VCES
VCE(sat)
IC
STGP7NB60KD
STGP7NB60KDFP
STGB7NB60KD
600 V
600 V
600 V
< 2.8 V
< 2.8 V
< 2.8 V
7A
7A
7A
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
VERY HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short circuit withstand capability.
3
1
3
2
1
TO-220
2
TO-220FP
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STGP7NB60KD
STGB7NB60KD
Unit
STGP7NB60KDFP
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuos) at TC = 25°C
14
A
IC
Collector Current (continuos) at TC = 125°C
7
A
Collector Current (pulsed)
56
A
ICM (n)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
80
35
W
0.64
0.28
W/°C
--
2500
V
–65 to 150
°C
150
°C
(n ) Pulse width limited by safe operating area
June 2002
1/9
STGP7NB60KD/FP/STGB7NB60KD
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
TO-220
D2PAK
TO-220FP
1.56
3.57
Thermal Resistance Junction-case Max
°C/W
Thermal Resistance Junction-ambient Max
62.5
°C/W
Thermal Resistance Case-heatsink Typ
0.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
VBR(CES)
ICES
IGES
Parameter
Test Conditions
Min.
Typ.
Max.
600
Unit
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
V
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
50
µA
VCE = Max Rating, TC = 125 °C
500
µA
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
nA
Max.
Unit
7
V
2.8
V
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 7 A
2.3
VGE = 15V, IC = 7 A, Tc =100°C
1.9
5
V
DYNAMIC
Symbol
Parameter
gfs
Forward Transconductance
Cies
Input Capacitance
Coes
Test Conditions
Min.
VCE = 25 V , IC =7 A
Typ.
Max.
Unit
5
S
560
pF
Output Capacitance
68
pF
Cres
Reverse Transfer
Capacitance
15
pF
Qg
Total Gate Charge
42
nC
Qge
Gate-Emitter Charge
7.9
nC
Qgc
Gate-Collector Charge
17.6
nC
tscw
Short Circuit Withstand Time
VCE = 25V, f = 1 MHz, VGE = 0
VCE = 480V, IC = 7 A,
VGE = 15V
Vce = 0.5 VBR(CES),
VGE = 15 V,
Tj = 125°C , RG = 10 Ω
10
µs
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon
2/9
Parameter
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Test Conditions
VCC = 480 V, IC = 7 A
RG = 10Ω, VGE = 15 V
VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tj = 125°C
Min.
Typ.
15
Max.
Unit
ns
48
ns
160
A/µs
70
µJ
STGP7NB60KD/FP/STGB7NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol
tc
Parameter
Cross-over Time
Test Conditions
Min.
Vcc = 480 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
Typ.
Max.
Unit
85
ns
20
ns
tr(Voff)
Off Voltage Rise Time
td(off)
Delay Time
75
ns
Fall Time
70
ns
Turn-off Switching Loss
85
µJ
Total Switching Loss
235
µJ
150
ns
50
ns
110
ns
Fall Time
110
ns
Turn-off Switching Loss
220
µJ
Total Switching Loss
405
µJ
tf
Eoff(**)
Ets
tc
Cross-over Time
tr(Voff)
Off Voltage Rise Time
td(off)
Delay Time
tf
Eoff(**)
Ets
Vcc = 480 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
If
Ifm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
If = 6 A
If = 6 A, Tj = 125 °C
1.8
1.4
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 6 A ,VR = 200 V,
Tj =125°C, di/dt = 100A/µs
100
135
2.7
Max.
Unit
6
48
A
A
2.2
V
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
3/9
STGP7NB60KD/FP/STGB7NB60KD
Fig. 1: Gate Charge test Circuit
4/9
Fig. 2: Test Circuit For Inductive Load Switching
STGP7NB60KD/FP/STGB7NB60KD
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
5/9
STGP7NB60KD/FP/STGB7NB60KD
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
inch
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
B
2.5
2.7
0.098
0.181
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L5
L3
L6
F2
H
G
G1
F
F1
L7
L2
6/9
L5
1 2 3
L4
STGP7NB60KD/FP/STGB7NB60KD
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
7/9
1
STGP7NB60KD/FP/STGB7NB60KD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
MAX.
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
8/9
inch
0.075 0.082
0.933 0.956
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
MAX.
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STGP7NB60KD/FP/STGB7NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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