STMICROELECTRONICS STGP7NC60H

STGP7NC60H - STGD7NC60H
N-CHANNEL 14A - 600V TO-220/DPAK
Very Fast PowerMESH™ IGBT
Figure 1: Package
Table 1: General Features
TYPE
VCES
VCE(sat) (Max)
@25°C
IC
@100°C
STGP7NC60H
STGD7NC60HT4
600 V
600 V
< 2.5 V
< 2.5 V
14 A
14 A
■
■
■
■
■
LOWER ON-VOLTAGE DROP (Vcesat)
OFF LOSSES INCLUDE TAIL CURRENT
LOWER CRES/CIES RATIO
HIGH FREQUENCY OPERATION UP TO 70
KHz
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) mantaining a low voltage drop.
3
3
1
TO-220
2
1
DPAK
Weight for TO-220: 1.92gr ± 0.01
Weight for DPAK: 0.38gr ± 0.01
Figure 2: Internal Schematic Diagram
APPLICATIONS
HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
■
Table 2: Order Code
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGP7NC60H
GP7NC60H
TO-220
TUBE
STGD7NC60HT4
D7NC60H
DPAK
TAPE & REEL
Rev. 2
June 2005
1/12
STGP7NC60H - STGD7NC60H
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220
Unit
DPAK
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
Collector Current (continuous) at TC = 25°C (#)
25
A
IC
IC
ICM ()
PTOT
Collector Current (continuous) at TC = 100°C (#)
14
A
Collector Current (pulsed)
50
A
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Tj
80
70
W
0.64
0.56
W/°C
Storage Temperature
– 55 to 150
Operating Junction Temperature
°C
() Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Rthj-case
Rthj-amb
TL
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
Typ.
Max.
TO-220
1.56
DPAK
1.78
TO-220
62.5
DPAK
100
TO-220
300
DPAK
275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters
Symbol
Parameter
Test Conditions
Collector-Emitter
Breakdown Voltage
IC = 1 mA, VGE = 0
ICES
Collector cut-off Current
(VGE = 0)
VCE = Max Rating, TC= 25 °C
VCE = Max Rating, TC= 125 °C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
VCE(sat)
Collector-Emitter
Saturation Voltage
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tc= 125°C
VBR(CES)
(#) Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = -------------------------------------------------------------------------------------------------C C
R
×V
(T , I )
THJ – C
CESAT ( M AX ) C C
2/12
Min.
Typ.
Max.
600
Unit
V
3.75
1.85
1.7
10
1
µA
mA
±100
nA
5.75
V
2.5
V
V
STGP7NC60H - STGD7NC60H
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward Transconductance
VCE = 15 V , IC = 7 A
4.30
S
Cies
Input Capacitance
VCE = 25 V, f= 1 MHz, VGE = 0
720
pF
Coes
Output Capacitance
81
pF
Cres
Reverse Transfer
Capacitance
17
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 390 V, IC = 7 A,
VGE = 15 V
(see Figure 21)
ICL
Turn-Off SOA Minimum
Current
Vclamp = 480 V , Tj = 150°C
RG = 10 Ω, VGE = 15 V
35
7
16
48
50
nC
nC
nC
A
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 18)
18.5
8.5
1060
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)
18.5
7
1000
ns
ns
A/µs
Table 8: Switching Off
Symbol
Parameter
tr(Voff)
Off Voltage Rise Time
td(off)
Turn-off Delay Time
tf
tr(Voff)
td(off)
tf
Current Fall Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Test Conditions
Min.
Vcc = 390 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 19)
Vcc = 390 V, IC = 7 A,
RG = 10 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 19)
Typ.
Max.
Unit
27
ns
72
ns
60
ns
56
ns
116
ns
105
ns
Table 9: Switching Energy
Symbol
Parameter
Test Conditions
Min.
Typ.
Max
Unit
125
150
275
µJ
µJ
µJ
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 19)
95
115
210
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)
140
215
355
µJ
µJ
µJ
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.
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STGP7NC60H - STGD7NC60H
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temperature
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STGP7NC60H - STGD7NC60H
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temperature
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Losses vs Collector
Current
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STGP7NC60H - STGD7NC60H
Figure 15: Thermal Impedance for TO-220
Figure 18: Ic vs Frequency
Figure 16: Thermal Impedance for DPAK
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum
operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
PD = ∆T / RTHJ-C
considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value
@125°C.
3) Power dissipation during ON & OFF commutations is due to the switching frequency:
PSW = (EON + EOFF) * freq.
4) Typical values @ 125°C for switching losses are
used (test conditions: VCE = 390V, VGE = 15V,
RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the
tail of the collector current is included in the EOFF
measurements (see note 3).
Figure 17: Turn-Off SOA
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STGP7NC60H - STGD7NC60H
Figure 19: Test Circuit for Inductive Load
Switching
Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
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STGP7NC60H - STGD7NC60H
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
8/12
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STGP7NC60H - STGD7NC60H
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
A
2.20
2.40
0.087
TYP.
0.094
MAX.
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
L2
0.8
0.398
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
9/12
STGP7NC60H - STGD7NC60H
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
10/12
inch
MIN.
12.1
1.5
D1
1.5
E
1.65
MAX.
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
0.319
1.574
16.3
0.618
0.641
MIN.
330
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
18.4
0.645
0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STGP7NC60H - STGD7NC60H
Table 10: Revision History
Date
Revision
20-Aug-2004
09-Jun-2005
1
2
Description of Changes
New datasheet
Modified title
11/12
STGP7NC60H - STGD7NC60H
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2005 STMicroelectronics - All Rights Reserved
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