ROHM 2SC4774

2SC4774 / 2SC4713K
Transistors
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
zFeatures
1) Very low output-on resistance (Ron).
2) Low capacitance.
2.0
1.3
0.9
(1)
(2)
0.65 0.65
(3)
0.3
0.7
2SC4774
1.25
2.1
Limits
Unit
VCBO
VCEO
12
6
V
V
Emitter-base voltage
Collector current
VEBO
IC
3
50
V
mA
Parameter
Collector power dissipation
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
PC
0~0.1
Symbol
Collector-base voltage
Collector-emitter voltage
0.15
0.2
zAbsolute maximum ratings (Ta=25°C)
0.1Min.
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
SMT3
S
hFE
Marking
Code
Basic ordering unit (pieces)
1.6
2.8
0.8
0~0.1
0.3Min.
1.1
FE
0.15
∗Denotes h
BM∗
T146
3000
T106
3000
(2)
2SC4713K
UMT3
S
BM∗
(3)
2SC4774
0.4
Type
Package
0.95 0.95
1.9
2.9
(1)
2SC4713K
zPackaging specifications and hFE
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
zExternal dimensions (Unit : mm)
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Parameter
BVCBO
BVCEO
12
6
3
−
−
−
−
−
−
V
V
V
IC=10µA
IC=1mA
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
ICBO
0.5
0.5
0.3
µA
µA
V
hFE
270
fT
Cob
300
−
−
−
−
−
800
1
VCB=10V
VCE(sat)
−
−
−
560
−
1.7
−
MHz
pF
Ron
−
2
−
Ω
Output-on resistance
BVEBO
IEBO
Conditions
IE=10µA
VEB=2V
IC/IB=10mA/1mA
VCE/IC=5V/5mA
VCE=5V, IE= −10mA, f=200MHz
VCB=10V, IE=0A, f=1MHz
IB=3mA, VI=100mVrms, f=500kHz
Rev.A
1/2
2SC4774 / 2SC4713K
Transistors
zElectrical characteristic curves
8
25mA
20mA
6
15mA
4
10mA
5mA
2
0
0
1
2
40
0.2mA
0.1mA
20
10
0
0
0.1
0.2
IB=0mA
0.4
0.5
0.3
−25°C
25°C
125°C
40
30
20
10
0
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output
Fig.2 Grounded emitter output
Fig.3 Grounded emitter propagation
COLLECTER SATURATION VOLTAGE : VCE(sat) (mA)
characteristics (
)
characteristics
2000
Ta=25°C
VCE=5V
500
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10 20
50
GAIN BANDWIDTH PRODUCT : fT (MHz)
1000
1000
Ta=25°C
IC/IB=10
500
200
100
50
20
10
5
0.1 0.2
0.5
1
2
5
10 20
500
200
100
50
20
0.1 0.2
50
5
2
1
0.5
0.2
0.1 0.2
0.5
1
2
5
10 20
50
5
10 20
10
Ta=25°C
f=500kHz
υi=100mVrms
RL=1kΩ
5
2
1
0.5
20
10
5
2
0.2
0.1 0.2
0.5
1
2
5
10 20
50
1
0.1 0.2
0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASS CURRENT : IB (mA)
Fig.7 Collector output capacitance
Fig.8 Back capacitance voltage
Fig.9 Output-on resistance vs.
vs. voltage
50
50
Ta=25°C
f=1MHz
ON RESISTANE : Ron (Ω)
OUTPUT CAPACITANCE : Cob (pF)
10
2
collector current
20
Ta=25°C
f=1MHz
1
Fig.6 Gain bandwidth product vs.
voltage vs. collector current
20
0.5
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
Fig.4 DC current gain vs. collector current
Ta=25°C
VCE=5V
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
FEEDBACK CAPACITIANCE : Cre (pF)
VCE=5V
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
characteristics ( )
DC CURRENT TRANSFER RATIO : hFE
50
0.3mA
30
IB=0µA
4
5
3
1.0
mA
30mA
mA
A
0.5 0.4m
Ta=25°C
COLLECTOR CURRENT : IC (mA)
50
35mA
Ta=25°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
10
50
base current
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1