2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Transistors High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S zExternal dimensions (Unit : mm) 2SC5659 1.2 0.8 0.2 (2) (3) 0.8 0.4 0.4 0.2 1.2 0.32 zFeatures 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2) Low rbb, high gain, and excellent noise characteristics. 0.5 ˚C ˚C Marking A A A A − Code Basic ordering unit (pieces) T2L TL T106 T146 TP 8000 3000 3000 3000 5000 (1) (2) 0.15 0.2 2.1 0.1to0.4 ROHM : UMT3 EIAJ : SC-70 Each lead has same dimensions 0.4 (1) 2SC2413K (1) Emitter (2) Base (3) Collector 1.6 0.15 2.8 0.3to0.6 ROHM : SMT3 EIAJ : SC-59 Each lead has same dimensions 2SC5058S 4 (1) Emitter (2) Base (3) Collector 2 3Min. 3 FE ∗ (15Min.) ∗ Denotes h ∗ 1.25 (2) SPT P 0.8 SMT3 P 2SC2413K 2SC2058S 0to0.1 UMT3 P (3) 2SC4098 EMT3 P (1) Emitter (2) Base (3) Collector 0to0.1 2SC4618 VMT3 P 0.3 2SC5659 (3) Type ∗ 0.1Min. 2SC4098 Package hFE ∗ 0.55 0.15 1.6 ROHM : EMT3 EIAJ : SC-75A zPackaging specifications and hFE 1.6 0.25 150 −55 to +150 0.8 2.0 Tj Tstg Junction temperature Storage temperature (2) 1.0 W Collector power dissipation (1) (3) 1.3 PC 0.15 0.2 2SC4618 0.9 V mA 1.1 5 50 0.2 VEBO IC 0.5 0.5 Emitter-base voltage Collector current 0.2 V V 0.7 40 25 0.65 0.65 VCBO VCEO 0.7 Collector-base voltage Collector-emitter voltage (1) Base (2) Emitter (3) Collector 0.15Max. 0.95 0.95 1.9 2.9 Unit 0.3 Limits 2SC5659, 2SC4618 2SC4098, 2SC2413K 2SC2058S 0.13 0to0.1 ROHM : VMT3 Symbol 0to0.1 zAbsolute maximum ratings (Ta=25°C) Parameter 0.22 (1) 0.45 2.5 0.5 0.45 5 ROHM : SPT EIAJ : SC-72 (1) (2) (3) Taping specifications (1) Emitter (2) Collector (3) Base Rev.A 1/3 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 40 25 − − − − Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVEBO − − − 0.5 0.5 µA IE=50µA VCB=24V IEBO 5 − − V V V µA VEB=3V Collector-emitter saturation voltage DC current transfer ratio VCE(sat) hFE − 82 0.1 − 0.3 180 V − IC/IB=10mA/1mA VCE=6V, IC=1mA Transition frequency fT 150 300 − MHz Output capacitance Cob − 1.3 2.2 pF ICBO − Conditions IC=50µA IC=1mA VCE=6V, IE= −1mA, f=100MHz VCB=6V, IE=0A, f=1MHz zElectrical characteristics curves 50 56 48 6 40 32 4 24 16 2 8 IB=0µA 2 4 0 Ta=25°C 8 10 6 20 10 5 2 1 0.5 0.1 0 DC CURRENT GAIN : hFE 0°C Ta=10 25°C 100 −55°C 50 20 10 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 3V 20 10 0.2 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 Fig.2 Ground emitter propagation characteristics Ta=25°C 0.2 0.1 IC/IB=50 20 0.05 10 0.02 0.01 0.2 1V 50 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 200 100 0.2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics DC CURRENT GAIN : hFE 64 VCE=5V 200 Fig.3 DC current gain vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 8 Ta=25°C VCE=6V Ta=25°C Ta= −55°C 72 Ta=100° C 80 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 10 IC/IB=10 0.2 0.1 0.05 Ta=100°C 25°C −55°C 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) Rev.A 2/3 Ta=25°C VCE=6V 1000 500 200 100 −1 −2 −5 −10 −20 −50 EMITTER CURRENT : IE (mA) Fig.7 Gain bandwidth product vs.emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) Transistors Ta=25°C f=1MHz IC=0A IE=0A 5 Cib 2 Cob 1 0.1 0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Capacitance vs. voltage COLLECTOR TO BASE TIME CONSTANT : CC rbb' (ps) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S 100 Ta=25°C VCE=6V f=31.8MHz 50 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.9 Collector to base time constance vs. emitter current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1