DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 PSMA8.5A to PSMA78A Transient voltage suppressor diodes Product specification Supersedes data of 1998 Dec 04 1999 Jan 26 Philips Semiconductors Product specification Transient voltage suppressor diodes PSMA8.5A to PSMA78A FEATURES DESCRIPTION • Glass passivated DO-214AC surface mountable package with glass passivated chip. • High maximum operating temperature The well-defined void-free case is of a transfer-moulded thermo-setting plastic. • Low leakage current • Excellent stability ,, ,, ,, cathode band handbook, 4 columns • UL 94V-O classified plastic package • Transient suppressor stand-off voltage range: 8.5 to 78 V for 26 types • Supplied in 12 mm embossed tape. k a Top view Side view MSA473 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PRSM 1999 Jan 26 PARAMETER non-repetitive peak reverse power dissipation CONDITIONS 10/1000 µs exponential pulse; Tj = 25 °C prior to surge; see Figs.3 and 5 2 VALUE 400 UNIT W Philips Semiconductors Product specification Transient voltage suppressor diodes PSMA8.5A to PSMA78A ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IF = 0.5 A MIN. MAX. − 1.2 UNIT VF forward voltage V Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C Per type Tj = 25 °C unless otherwise specified. REVERSE STAND-OFF VOLTAGE BREAKDOWN VOLTAGE DEVICE (note 1) REVERSE VOLTAGE (max) @ IRSM (CLAMPING VOLTAGE) REVERSE SURGE CURRENT (max) REVERSE LEAKAGE CURRENT (max) @ VRWM VRSM (V) IRSM (A) IR (µA) VRWM (V) VBR min. (V) IT (mA) PSMA8.5A 8.5 9.44 1 14.4 27.8 5.0 PSMA9.0A 9.0 10.0 1 15.4 26.0 2.5 PSMA10A 10 11.1 1 17.0 23.5 2.5 PSMA11A 11 12.2 1 18.2 22.0 2.5 PSMA12A 12 13.3 1 19.9 20.1 2.5 PSMA13A 13 14.4 1 21.5 18.6 2.5 PSMA14A 14 15.6 1 23.2 17.2 2.5 PSMA15A 15 16.7 1 24.4 16.4 2.5 PSMA16A 16 17.8 1 26.0 15.4 2.5 PSMA17A 17 18.9 1 27.6 14.5 2.5 PSMA18A 18 20.0 1 29.2 13.7 2.5 PSMA20A 20 22.2 1 32.4 12.3 2.5 PSMA22A 22 24.4 1 35.5 11.3 2.5 PSMA24A 24 26.7 1 38.9 10.3 2.5 PSMA26A 26 28.9 1 42.1 9.5 2.5 PSMA28A 28 31.1 1 45.4 8.8 2.5 PSMA30A 30 33.3 1 48.4 8.3 2.5 PSMA33A 33 36.7 1 53.3 7.5 2.5 1999 Jan 26 3 Philips Semiconductors Product specification Transient voltage suppressor diodes REVERSE STAND-OFF VOLTAGE PSMA8.5A to PSMA78A BREAKDOWN VOLTAGE DEVICE (note 1) VBR min. (V) VRWM (V) IT (mA) REVERSE VOLTAGE (max) @ IRSM (CLAMPING VOLTAGE) REVERSE SURGE CURRENT (max) REVERSE LEAKAGE CURRENT (max) @ VRWM VRSM (V) IRSM (A) IR (µA) PSMA36A 36 40.0 1 58.1 6.9 2.5 PSMA40A 40 44.4 1 64.5 6.2 2.5 PSMA43A 43 47.8 1 69.4 5.8 2.5 PSMA45A 45 50.0 1 72.2 5.5 2.5 PSMA48A 48 53.3 1 77.4 5.2 2.5 PSMA51A 51 56.7 1 82.4 4.9 2.5 PSMA54A 54 60.0 1 87.1 4.6 2.5 PSMA58A 58 64.4 1 93.6 4.3 2.5 PSMA60A 60 66.7 1 96.8 4.1 2.5 PSMA64A 64 71.1 1 103.0 3.9 2.5 PSMA70A 70 77.8 1 113.0 3.5 2.5 PSMA75A 75 83.3 1 121.0 3.3 2.5 PSMA78A 78 86.7 1 126.0 3.2 2.5 Note 1. Tolerance and Voltage Designation: Tolerance designation - The type number listed indicates a tolerance of ±.5% THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS VALUE UNIT 25 K/W note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 µm, see Fig.4. 2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4. For more information please refer to the ‘General part of the associated handbook’. 1999 Jan 26 4 Philips Semiconductors Product specification Transient voltage suppressor diodes PSMA8.5A to PSMA78A GRAPHICAL DATA MGR463 4 MGR465 104 handbook, halfpage handbook, halfpage Ptot (W) PRSM 3 (W) 103 2 1 102 10−2 0 100 0 T (°C) 200 Solid line: tie-point temperature. Dotted line: ambient temperature; device mounted on an Al2O3 printed-circuit board as shown in Fig.4. 1 t2 (ms) 10 Tj = 25 °C prior to surge. Fig.3 Fig.2 10−1 Maximum total power dissipation as a function of temperature. Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (exponential pulse). IRSMhalfpage handbook, 50 (%) 100 90 4.5 50 50 2.5 10 1.25 t MSB213 t1 t2 MGD521 In accordance with “IEC 60-1, Section 8”. t1 = 10 µs. t2 = 1000 µs. Dimensions in mm. Fig.5 Fig.4 Printed-circuit board for surface mounting. 1999 Jan 26 5 Non-repetitive peak reverse current pulse definition. Philips Semiconductors Product specification Transient voltage suppressor diodes PSMA8.5A to PSMA78A PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors SOD106 H D A A1 c Q E b (1) 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D E H Q mm 2.3 2.0 0.05 1.6 1.4 0.2 4.5 4.3 2.8 2.4 5.5 5.1 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD106 1999 Jan 26 REFERENCES IEC JEDEC EIAJ DO-214AC EUROPEAN PROJECTION ISSUE DATE 97-06-09 6 Philips Semiconductors Product specification Transient voltage suppressor diodes PSMA8.5A to PSMA78A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jan 26 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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