Cypress Semiconductor Product Qualification Report QTP# 042809 VERSION 4.0 October 2006 Automotive PSoC Mixed Signal Array Family S4AD-5CTI Technology, Fab 2 CY8C24223A CY8C24423A Mixed Signal Array with On-Chip Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Rene Rodgers Principal Reliability Engineer (408) 943-2732 Mira Ben T-Zur Quality Engineering Director (408) 943-2675 Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 2 of 11 October 2006 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 042702 Automotive PSoC 8C27243/443/643 Rev B Device Product Family on S4AD-5CTI Technology, Fab2 Nov 04 042809 Automotive PSoC 8C24xxx Rev B Device Product Family on S4AD-5CTI Technology, Fab2 Nov 04 Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 3 of 11 October 2006 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CY8C24xxx product family in Technology S4D-5CTI in Fab 2 for Automotive Application Marketing Part #: CY8C24223A, CY8C24423A Device Description: 5V, Automotive, available in 20/28-Lead SSOP Cypress Division: Cypress Semiconductor – Consumer and Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. B 8C24000B TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: S4AD-5CTI Metal 1: 500A Ti/6000A Al 0.5% Cu /1200A TiW Metal 2: 500A Ti/8000A Al 0.5% Cu/300A TiW Passivation Type and Materials: 3,000A TeOs / 6000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 150,000 Number of Gates in Device 25,000 Generic Process Technology/Design Rule ( -drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Round Rock, TX Die Fab Line ID/Wafer Process ID: Fab2, S4AD-5CTI SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 20/28-Lead SSOP OSE-Taiwan (TAIWN-T) Note: Package Qualification details upon request. Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP28 28-lead Shrunk Small Outline Packages (SSOP) Hitachi CEL9220HF V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Sn Matte (100% Sn) Die Backside Preparation Method/Metallization: N/A Die Separation Method: Sawing 100% Die Attach Supplier: Ablestik Die Attach Material: 8340 Die Attach Method: Epoxy (Conductive) Bond Diagram Designation: 10-05890 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 116° C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-35999 Name/Location of Assembly (prime) facility: OSE-Taiwan ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. QTP# 042809, V, 4.0 Page 4 of 11 October 2006 Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 5 of 11 October 2006 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 150°C Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 150°C Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Result P/F P P P Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker 121°C, 100%RH P Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C High Accelerated Saturation Test (HAST) 130°C, 5.5V, 85%RH, 130°C, 3.63V, 85%RH P Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Data Retention 150°C ± 5°C no bias P High Temperature Steady State Life 150°C, 3.63V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 500V/1000V/1500V/2000V Electrostatic Discharge 2,200V, 2,000V Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge P Charge Device Model (ESD-CDM) 250V/500V/750V (corner pins only) Cypress Spec. 25-00020 Age Bond Strength MIL-STD-883C, Method 2011 P Acoustic Microscopy Cypress Spec. 25-00104 P Low Temperature Operating Life -30C, 4.3V, 8MHZ P Endurance Test MIL-STD-883C, Method 1033 P Dynamic Latchup Sensitivity Cypress Spec. 01-00081 P Static Latchup Sensitivity 125°C, ± 300mA P JESD22, Method A114-B Cypress Spec. 01-00081 P P Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 6 of 11 October 2006 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F Ball Shear Cypress Spec 24-00018 P Bond Pull Cypress Spec 24-00002 P Electrical Distribution AEC-Q100-009 P External Visual Cypress Spec 25-00038 P Physical Dimensions Cypress Spec. 25-00031 P High Temperature Storage 150°C ± 5°C, no bias P Solderability Cypress Spec. 25-00018 P Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 7 of 11 October 2006 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate @125C 3,372 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 232,000 DHRs 0 0 .7 55 71 FITs * Stress/Test 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. * Based on Automotive qual samples size not Commercial qual sample size. Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 8 of 11 October 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 042702 Duration Samp Rej STRESS: ACOUSTIC, MSL1 CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T COMP 15 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T COMP 15 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP 15 0 2403330 610438921 TAIWN-T COMP 5 0 2403330 610438921 TAIWN-T COMP 5 0 STRESS: BALL SHEAR CY8C27443 (8C27443B) STRESS: BOND PULL CY8C27443 (8C27443B) STRESS: DATA RETENTION CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 1000 94 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 1000 94 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 1000 92 0 STRESS: ELECTRICAL DISTRIBUTION CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T COMP 30 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T COMP 30 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP 30 0 STRESS: ENDURANCE (DATA RETENTION) CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T COMP 94 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T COMP 94 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 1000 92 0 STRESS: EXTERNAL VISUAL CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T COMP 1317 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T COMP 1223 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP 1400 0 TAIWN-T COMP 3 0 TAIWN-T COMP 3 0 COMP 6 0 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8C27443 (8C27443B) 2403330 610438921 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C27443 (8C27443B) 2403330 610438921 STRESS: ESD-CHARGE DEVICE MODEL, 750V (Corner pins only) CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T Failure Mechanism Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 9 of 11 October 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 042702 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 500V CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP 3 0 3 0 3 0 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 1,000V CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 1,500V CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,000V CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 48 848 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 48 848 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 48 847 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 5.5V, Vcc Max CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 1000 78 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 1000 81 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 1000 73 0 STRESS: ENDURANCE (LIFE TEST) CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 1000 81 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 1000 84 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 1000 84 0 TAIWN-T 1000 50 0 STRESS: HIGH TEMPERATURE STORAGE, 150C CY8C27443 (8C27443B) 2403330 610438921 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.5V, PRE COND 168 HR 85C/85%RH, MSL1 CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 96 85 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 96 84 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 96 85 0 STRESS: PHYSICAL DIMENSIONS CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T COMP 10 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T COMP 10 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP 10 0 Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 10 of 11 October 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 042702 Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING, 125C, 9V, ±300mA CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP 3 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 168 HR 85C/85%RH, MSL1 CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 96 85 0 CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 168 85 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 96 85 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 168 85 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 96 85 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 168 85 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH, MSL1 CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 500 85 0 CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T 1000 84 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 500 85 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T 1000 82 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 500 85 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T 1000 80 0 STRESS: SOLDERABILITY CY8C27443 (8C27443B) 2414285 610438918 TAIWN-T COMP 15 0 CY8C27443 (8C27443B) 2405478 610438920 TAIWN-T COMP 15 0 CY8C27443 (8C27443B) 2403330 610438921 TAIWN-T COMP 15 0 Cypress Semiconductor Automotive PSoC Mixed-Signal Array family, S4AD-5CTI, Fab 2 Device: CY8C24xxx QTP# 042809, V, 4.0 Page 11 of 11 October 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 042809 Duration Samp Rej STRESS: ELECTRICAL DISTRIBUTION CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T COMP 30 0 CY8C24423A (8C24423B) 2421934 610439704 TAIWN-T COMP 30 0 CY8C24423A (8C24423B) 2422007 610439705 TAIWN-T COMP 30 0 TAIWN-T COMP 3 0 TAIWN-T COMP 3 0 COMP 6 0 3 0 3 0 3 0 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8C24423A (8C24423B) 2419761 610439360 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8C24423A (8C24423B) 2419761 610439360 STRESS: ESD-CHARGE DEVICE MODEL, 750V (Corner pins only) CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 500V CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 1,000V CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 1,500V CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,000V CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T 48 829 0 COMP 6 0 STRESS: STATIC LATCH-UP TESTING, 125C, 9V, ±300mA CY8C24423A (8C24423B) 2419761 610439360 TAIWN-T Failure Mechanism