Document No.001-89310 Rev. ** ECN # 4517702 Cypress Semiconductor Product Qualification Report QTP# 071402 VERSION*A September 2014 PSoC™ Lithium Device Family S4AD-5 Technology, Fab5 GSMC CY8C24123A CY8C24223A CY8C24423A Mixed Signal Array with On-Chip Controller FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No.001-89310 Rev. ** ECN # 4517702 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 06 071402 Qualify PSOC 8C24000B Lithium Device on S4AD-5 Technology, Fab5 (GSMC) Feb 08 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No.001-89310 Rev. ** ECN # 4517702 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify PSOC 8C24000B Lithium Device on S4AD-5 Technology, Fab5 (GSMC) Marketing Part #: CY8C24123A, CY8C24223A, CY8C24423A Device Description: 3.3V and 5V Industrial 24Mhz Programmable System on Chip Cypress Division: Cypress Semiconductor - Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 250A TiN/5,800A Al/700A TiN Metal 2: 500A TiN/8,000A 7,000A TeOs /6,000A Si3N4 Passivation Type and Materials: Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: GSMC/Shanghai-China Die Fab Line ID/Wafer Process ID: S4AD-5 GSMC Sonos PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 8-Lead SOIC PHIL-M 20/28-Lead SOIC CML-R 20/28-Lead SSOP TAIWN-T, PHIL-M, CML-RA 56-Lead SSOP CML-R 8/20/28-Lead PDIP INDNS-O 32-Lead MLF SEOUL-L, CML-RA Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No.001-89310 Rev. ** ECN # 4517702 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: 28-Lead Shrunk Small Outline Package (SSOP) Mold Compound Name/Manufacturer: CEL 9220HF Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8340 Die Attach Method: Epoxy Dispense Bond Diagram Designation: 10-05890 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 90 °C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-35032 Name/Location of Assembly (prime) facility: OSE-Taiwan MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No.001-89310 Rev. ** ECN # 4517702 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Te st High Temperature Operating Life Early Failure Rate Test Condition (Temp/Bias Dynamic Operating Condition, Vcc Max=5.5V, 125°C Result P/F P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C High Temperature Steady State life 125°C, 5.5V, Vcc Max P Low Temperature Operating Life -30°C, 5.5V P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker P Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P P 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P Acoustic Microscopy J-STD-020 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150°C ± 5°C No Bias P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-E P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 125C, ± 200mA JESD78B P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No.001-89310 Rev. ** ECN # 4517702 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 1000 Devices 1 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 900,000DHRs 0 0 .7 55 18 FIT 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. 2 Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation 3 E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No.001-89310 Rev. ** ECN # 4517702 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: Failure Mechanism ACOUSTIC, MSL1 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No.001-89310 Rev. ** ECN # 4517702 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 3 0 C-USA COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) STRESS: 610639767 9621713 610632687 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 45 0 STRESS: CAPACITOR DEFECT LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No.001-89310 Rev. ** ECN # 4517702 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No.001-89310 Rev. ** ECN # 4517702 Reliability Test Data QTP #: 071402 Device STRESS: Fab Lot # 610760878 TAIWAN-T 500 77 0 610760878 TAIWAN-T COMP 77 0 TAIWAN-T COMP 9 0 8 0 610760878 610760878 TAIWAN-T COMP HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C244235A (8C244235B) 4736737 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-E, (2,200V) CY8C244235A (8C244235B) 4736737 STRESS: Rej ESD-CHARGE DEVICE MODEL, (500V) CY8C244235A (8C244235B) 4736737 STRESS: Samp ENDURANCE CY8C244235A (8C244235B) 4736737 STRESS: Assy Loc Duration DATA RETENTION, PLASTIC, 150C CY8C244235A (8C244235B) 4736737 STRESS: Assy Lot # 610760878 TAIWAN-T 96 1000 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C244235A (8C244235B) 4736737 610760878 TAIWAN-T 168 180 0 CY8C244235A (8C244235B) 4736737 610760878 TAIWAN-T 1000 180 0 COMP 6 0 STRESS: STATIC LATCH-UP TESTING (125C, 7.87V, +/-200mA) CY8C244235A (8C244235B) 4736737 610760878 TAIWAN-T Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-89310 Rev. ** ECN # 4517702 Document History Page Document Title: QTP#071402: PSoC Lithium Device Family "CY8C24123A/24223A/24423A" S4AD-5 Technology, Fab5 GSMC Document Number: 001-89310 Rev. ECN Orig. of No. Change ** 4133296 HSTO *A 4517702 HSTO Description of Change Initial Spec Release Initiate report as per memo HGA-335. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11