Document No. 001-69539 Rev. *B ECN #: 4048815 Cypress Semiconductor Product Qualification Report QTP# 052004 July 2013 PSoC Mixed Signal Array Neutron Device Family, S4AD-5, Fab4 CY8C21234 CY8C21334 CY8C21434 PsoC™ Mixed Signal Array with On-Chip Controller CY8C21534 CY8C21634 CY8C9520 20 - Bit I/O Expander with EEPROM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 TABLE I PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 052004 PsoC 8C21001A Neutron Product Family on SONOS S4AD Aug 05 070301 14 Layer Mask Change on Neutron Device Family, S4AD Feb 07 072602 Minor Changes to Poly (P1M) and Metal 2 (MM) masks on Neutron (8C21001AC), , S4AD Sep 07 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Table II PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification Purpose: Qualify Device PsoC 8C21001A Neutron Device Family on S4AD-5 Technology, Fab4 CY8C21234, CY8C21334, CY8C21434, CY8C21534, CY8C21634 Marketing Part #: Device Description: 3.3V and 5V Industrial 24MHz Programmable System on Chip Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division Table III TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal 1: 500A Ti/6,000A Al /300A TiW Metal 2: 500A Ti/8,000A Al /300A TiW 7,000A TEOS / 6,000A Si3N4 Passivation Type and Thickness: Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 SiO2 / 110A Gate Oxide Material/Thickness (MOS): m Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD-5, SONOS Table IV PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 16 lead SOIC TAIWAN-T 20 lead SSOP CML-RA, PHIL-M, TAIWAN-T 28 lead SSOP CML-RA, PHIL-M, TAIWAN-T 32 lead MLF SEOUL-L Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Table V MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: 28-Lead Shrunk Small Outline Package (SSOP) Hitachi CEL9220HF V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: 100% Pure Sn Die Backside Preparation Method/Metallization: Die Separation Method: Backgrind 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8340 Die Attach Method: Dispensing Bond Diagram Designation: 10-06220 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 96°C/W Package Cross Section Yes/No: No Assembly Process Flow: 49-35032 Name/Location of Assembly (prime) facility: Taiwan- T MSL Level 3 Reflow Profile 260C Table VI ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Table VII RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Accelerated Saturation Test (HAST) Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=5.5V, 125°C JESD22-A108 Dynamic Operating Condition, Vcc Max=5.5V, 125°C JESD22-A108 JEDEC STD 22-A110: 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 Result P/F P P P 168 Hrs, 85C/85%RH+Reflow, 260°C+0, -5 C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+Reflow, 260°C+0, -5°C JESD22-A102: 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 Pressure Cooker P 168 Hrs, 85C/85%RH+Reflow, 260°C+0, -5°C Data Retention JESD22-A117 and JESD22-A103: 150°C ± 5°C No Bias P High Temperature Steady State life JESD22-A108: 125°C, 5.5V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114 P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Electrostatic Discharge Machine Model (ESD-MM) 200V JESD22, Method A115 P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Low Temperature Operating Life -30C, 5.5V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+Reflow, 260°C+0, -5°C Dynamic Latch up 125C, 8.3V P Latch up Sensitivity 125C, ± 200mA, ± 300mA P JESD78 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Table VIII RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1.098 Devices 0 N/A N/A 0 PPM 528,750 DHRs 0 0.7 55 31 FIT 1,2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWAN-T COMP 45 0 STRESS : ENDURANCE CY8C21534 (8C21534A) STRESS : ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWAN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWAN-T COMP 3 0 610521157 TAIWAN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWAN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Reliability Test Data QTP #: 070301 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4652654 610704326 TAIWAN-T 96 400 0 CY8C21534 (8C21534A) 4652654 610704327 TAIWAN-T 96 298 0 CY8C21534 (8C21534A) 4652654 610704328 TAIWAN-T 96 400 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21434 (8C21434A) 4652654 610704305 TAIWAN-T COMP 9 0 CY8C21534 (8C21534A) 4652654 610704325 TAIWAN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21434 (8C21434A) 4652654 610704305 TAIWAN-T COMP 8 0 CY8C21534 (8C21534A) 4652654 610704325 TAIWAN-T COMP 8 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.30V, ±200mA) CY8C21534 (8C21534A) 4652654 610704325 TAIWAN-T Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Reliability Test Data QTP #: 072602 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4723791 610742720 CML-RA 500 30 0 CY8C21534 (8C21534A) 4723791 610742720 CML-RA 1000 30 0 CY8C21534 (8C21534A) 4723791 610742721 CML-RA 500 19 0 CY8C21534 (8C21534A) 4723791 610742721 CML-RA 1000 19 0 CY8C21534 (8C21534A) 4723791 610742722 CML-RA 500 30 0 CY8C21534 (8C21534A) 4723791 610742722 CML-RA 1000 30 0 CY8C21534 (8C21534A) 4723791 610742720 CML-RA COMP 23 0 CY8C21534 (8C21534A) 4723791 610742721 CML-RA COMP 30 0 CY8C21534 (8C21534A) 4723791 610742722 CML-RA COMP 28 0 STRESS: ENDURANCE STRESS: SORT YIELD CY8C21534 (8C21534A) 4723791 COMP SAME YIELD Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No. 001-69539 Rev. *B ECN #: 4048815 Reliability Test Data QTP #: ER112029 Device Fab Lot # Assy Lot # Assy Loc Duration 611110887 CHINA-AE Samp Rej Failure Mechanism STRESS: ESD-MACHINE MODEL, (200V) CY8C21434 (8C21434A) 4038430 COMP 5 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-69539 Rev. *B ECN #: 4048815 Document History Page Document Title: QTP#052004: CY8C21X34 FAMILY S4AD-5, AT FAB-4 CMI PRODUCT QUALIFICATION REPORT 001-69539 Document Number: Rev. ECN No. ** 3253826 *A 4005168 Orig. of Change FDW NSR *B 4048815 HSTO Distribution: WEB Posting: Description of Change Added machine model ESD data Changed the contact reliability engineer. Removed the reference Cypress Specs in reliability tests performed table and replaced with industry standard. Removed 3X IR in MSL precondition. Added CY8C9520 20 - Bit I/O Expander with EEPROM. None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13