Document No. 001-87926 Rev. ** ECN #: 4027024 Cypress Semiconductor Product Qualification Report QTP# 064001 June 2013 WIRELESS MICROCONTROLLER DEVICE FAMILY (enCoRe II) S4AD-5 TECHNOLOGY, FAB5 CY7C60323 CY7C60333 Mixed Signal Array with On-Chip Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 060605 Qualify GSMC using PSoC Device Product Family on S4AD-5 Technology Aug 06 062509 Neutron Device Product Family on S4AD-5 Technology transfer to GSMC Aug 06 064001 Qualified by extension Wireless Microcontroller Device Family (enCoRe II) on S4AD-5 Technology transfer to GSMC Oct 06 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualified by extension transfer Wireless Microcontroller Device Family (enCoRe II) in S4D-5 Technology at GSMC Foundry Marketing Part #: CY7C60323, CY7C60333 Device Description: 3.3V and 5V Industrial 24Mhz Programmable System on Chip Cypress Division: Cypress Semiconductor - Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal Composition: Metal 1: 250A TiN/5,800A Al/700A TiN Metal 2: 500A TiN/8,000A Al/250A TiN Passivation Type and Materials: 7,000A TeOs /6,000A Si3N4 Generic Process Technology/Design Rule (-drawn): Single Poly, Double Metal, 0.35 m Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: GSMC/Shanghai-China Die Fab Line ID/Wafer Process ID: S4AD-5 GSMC SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28-Lead SSOP PHIL-M, TAIWN-T, CML-RA 32-Lead QFN SEOL-L, CML-RA, TAIWAN-G Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: SP28 Package Outline, Type, or Name: 28-Lead Shrunk Small Outline Package (SSOP) Mold Compound Name/Manufacturer: G600 - Sumitomo Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: Ablebond 8290 Die Attach Method: Epoxy Bond Diagram Designation: 10-06220 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 95.0°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-00365 Name/Location of Assembly (prime) facility: Amkor-Phil MSL Level 1 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, KYEC,Taiwan Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125C P High Temperature Steady State life 125C, 5.5V, Vcc Max P Low Temperature Operating Life -30C, 5.5V P High Accelerated Saturation Test (HAST) 130C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260C+0, -5C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260C+0, -5C P Pressure Cooker 121C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260C+0, -5C P Acoustic Microscopy J-STD-020 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Data Retention 150C ,No Bias P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C P Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 125C, 200mA In accordance with JEDEC 17 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 RELIABILITY FAILURE RATE SUMMARY Stress/Test 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 1,000 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 720,000DHRs 0 0 .7 55 23 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: Failure Mechanism ACOUSTIC, MSL1 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 COMP 3 0 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 STRESS: PHIL-M C-USA COMP DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) STRESS: 610639767 9621713 610632687 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 1800 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: 0 HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 500 45 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 CAPACITOR DEFECT Document No. 001-87926 Rev. ** ECN #: 4027024 Reliability Test Data QTP #: 060605 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 Reliability Test Data QTP #: 062509 Device STRESS: Fab Lot # Duration Samp Rej Failure Mechanism 9628722 610642654 PHIL-M COMP 9 0 9 0 COMP 3 0 PHIL-M COMP 3 0 PHIL-M 500 300 0 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C60323 (7C603235A) STRESS: Assy Loc ESD-CHARGE DEVICE MODEL, (500V) CY7C60323 (7C603235A) STRESS: Assy Lot # 9628722 610642654 PHIL-M COMP ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY7C60323 (7C603235A) 9628722 610642654 PHIL-M STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY7C60323 (7C603235A) STRESS: 9628722 610642654 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY7C60323 (7C603235A) STRESS: 610642654 DATA RETENTION, PLASTIC, 150C CY7C60323 (7C603235A) STRESS: 9628722 9628722 610642654 PHIL-M 96 1000 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY7C60323 (7C603235A) 9628722 610642654 PHIL-M 168 180 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY7C60323 (7C603235A) STRESS: 9628722 610642654 PHIL-M 168 45 0 50 0 TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY7C60323 (7C603235A) 9628722 610642654 PHIL-M 168 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 001-87926 Rev. ** ECN #: 4027024 Document History Page Document Title: QTP # 064001 : WIRELESS MICROCONTROLLER DEVICE FAMILY (enCoRe II) CY7C60323/ CY7C60333, S4AD-5 TECHNOLOGY, FAB5 Document Number: 001-87926 Rev. ECN Orig. of No. Change ** 4027024 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-585 in spec format. Initiated spec for QTP 064001 and all data from Memo LGQ-585 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11