DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION • Easy power control 1 drain 1 • Excellent ruggedness 2 drain 2 • Source on underside eliminates DC isolators, reducing common mode inductance 3 gate 1 4 gate 2 5 source connected to flange • Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range. 1 2 DESCRIPTION 3 4 5 Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. Top view MBK880 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) MODE OF OPERATION 2-tone, class-AB f1 = 2170; f2 = 2170.1 VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 28 120 (PEP) >11 >30 ≤−25 MIN. MAX. UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) − 18 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Dec 12 2 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE Rth j-mb thermal resistance from junction to mounting-base PL = 120 W; T mb = 50 °C, note 1 Rth mb-h thermal resistance from mounting-base to heatsink UNIT 0.35 K/W 0.15 K/W MAX. UNIT Note 1. Thermal resistance is determined under nominal 2-tone RF operating conditions. CHARACTERISTICS Tj = 25 °C; per section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.4 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 140 mA 4.4 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 10 µA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 18 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 25 nA gfs forward transconductance VDS = 10 V; ID = 5 A − 4.2 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 5 A − 0.15 − Ω Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz; note 1 − 3.4 − pF Note 1. Capacitance of die only. APPLICATION INFORMATION RF performance in a common source class-AB circuit. T h = 25 °C; Rth j-h = 0.5 K/W; unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2170; f2 = 2170.1 28 2 x 500 120 (PEP) >11 >30 ≤−25 Ruggedness in class-AB operation The BLF2022-120 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 2170 MHz, PL = 120 W (CW). 2000 Dec 12 3 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor 15 GP (dB) 16 60 ηD (%) GP BLF2022-120 0 GP (dB) ACPR (dBc) GP 12 10 -20 40 ACPR 8 -40 ηD 5 ACPR10 20 4 0 0 0 30 35 40 Fig.3 -20 d3 d5 -60 d7 -80 35 40 45 50 PL avg (dBm) VDS = 28 V; IDQ = 2 x 500 mA; f 1 = 2170 MHz; f2 = 2170.1 MHz;T h ≤ 25 °C. Fig.4 Intermodulation distortion as a function of average load power; typical values. 2000 Dec 12 30 35 40 45 50 PL avg (dBm) Input signal: 3GPP W-CDMA 15DPCH Peak to average ratio: 10.27 dB (0.0001 %) 0 dim (dBc) 30 25 VDS = 28 V; IDQ = 2 x 500 mA; f 1 = 2140 MHz; f2 = 2140.1 MHz;T h ≤ 25 °C. Power gain and drain efficiency as functions of average load power; typical values. -40 -80 20 45 50 PL avg (dBm) VDS = 28 V; IDQ = 2 x 500 mA; f 1 = 2170 MHz; f2 = 2170.1 MHz;T h ≤ 25 °C. Fig.2 -60 4 Power gain and adjacent channel power ratio as functions of average load power; typical values. Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PACKAGE OUTLINE Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 e E E1 9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96 mm inches 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72 p Q q 3.30 3.05 2.31 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-28 00-03-03 SOT539A 2000 Dec 12 EUROPEAN PROJECTION 5 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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