DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2043F UHF power LDMOS transistor Preliminary specification 2000 Oct 19 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance 3 source • Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS 1 • Communication transmitter applications in the UHF frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting base. Top view MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2200; f2 = 2200.1 26 10 (PEP) >11 >30 ≤−26 MODE OF OPERATION CW, class-AB (2-tone) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) − 2.2 A Ptot total power dissipation − tbf W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tmb ≤ 25 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Oct 19 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE Tmb = 25 °C; note 1 UNIT 5 K/W 0.5 K/W Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.2 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 1.5 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 2.8 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 13 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 11 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 0.5 − pF 100 C (pF) Coss Ciss 10 Crss 1 0.1 0 10 20 30 VDS (V) VGS = 0; f = 1 MHz. Fig.2 Input, output and feedback capacitance as functions of drain-source voltage, typical values. 2000 Oct 19 3 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F APPLICATION INFORMATION RF performance in a common source class-AB circuit. T h = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2200; f2 = 2200.1 26 85 10 (PEP) >11 >30 ≤−26 MODE OF OPERATION CW, class-AB (2-tone) Ruggedness in class-AB operation The BLF2043F is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power. 15 GP (dB) 0 dim (dBc) 60 ηD (%) GP d3 -20 40 10 ηD d5 -40 d7 20 5 -60 -80 0 0 0 4 8 0 12 16 PL (PEP) (W) 4 8 VDS = 26 V; IDQ = 85 mA; f 1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f 1 = 2000 MHz; f2 = 2000.1 MHz. Fig.3 Fig.4 Power gain and efficiency as functions of peak envelope load power, typical values. 2000 Oct 19 4 12 16 PL (PEP) (W) Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F 0 dim (dBc) 60 ηD (%) 15 GP (dB) GP -20 d3 40 10 ηD d5 -40 d7 20 5 -60 -80 0 0 0 4 8 0 12 16 PL (PEP) (W) 4 8 VDS = 26 V; IDQ = 85 mA; f 1 = 2200 MHz; f2 = 2200.1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f 1 = 2200 MHz; f2 = 2200.1 MHz. Fig.5 Fig.6 Power gain and efficiency as functions of peak envelope load power, typical values. 0 d3 (dBc) -20 (1) -40 (2) (3) -60 0 4 8 12 16 PL (PEP) (W) VDS = 26 V; Th ≤ 25 °C; f 1 = 2200 MHz; f2 = 2200.1 MHz. (1) I DQ = 115 mA. (2) I DQ = 55 mA. (3) I DQ = 85 mA. Fig.7 Intermodulation distortion as a function of peak envelope load power; typical values. 2000 Oct 19 5 12 16 PL (PEP) (W) Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F 6 ZL (Ω) 4 8 zi (Ω) RL 6 2 0 4 xi XL -2 2 ri -4 0 -6 1.8 2 1.8 2.2 f (GHz) 2 2.2 f (GHz) VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. Impedance measured at reference planes. Fig.8 Fig.9 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. Vdd L10 C18 C19 C20 C13 C14 C15 Vgate C6 C11 C5 R1 L9 C1 Output 50 Ohm L2 L3 C10 L8 C8 C2 L4 C3 L5 Output 50 Ohm L7 L6 L1 C12 C9 C7 C4 L7 Fig.10 Class-AB test circuit for 2.2 GHz. 2000 Oct 19 6 C16 C17 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F List of components (see Figs 10 and 11) COMPONENT DESCRIPTION VALUE C1, C2, C10, C11 multilayer ceramic chip capacitor; note 1 6.8 pF C3, C4, C7 and C9 Tekelec variable capacitor; type 37271 C5 multilayer ceramic chip capacitor; note 1 2.4 pF C6, C18 tantalum SMD capacitor C8 multilayer ceramic chip capacitor; note 1 1.5 pF DIMENSIONS CATALOGUE NO. 0.6 to 4.5 pF 10 µF; 35 V C12, C20 multilayer ceramic chip capacitor; note 2 1 nF C13, multilayer ceramic chip capacitor; note 1 10 pF C14, multilayer ceramic chip capacitor; note 1 51 pF C15, multilayer ceramic chip capacitor; note 1 120 pF C16 multilayer ceramic chip capacitor 100 nF 2222 581 16641 C17 electrolytic capacitor 47 µF; 35 V 2222 036 90094 C19 electrolytic capacitor 100 µF; 63 V L1, L8 stripline; note 3 50 Ω 4 × 1.5 mm L2 stripline; note 3 50 Ω 7 × 1.5 mm L3 stripline; note 3 58.1 Ω 12 × 1.2 mm 2222 037 58101 L4 stripline; note 3 11.3 Ω 9 × 10 mm L5 stripline; note 3 11.3 Ω 11.5 × 10 mm L6 stripline; note 3 52.8 Ω 11 × 1.4 mm L7 stripline; note 3 50 Ω L8 2 turns enamelled 0.5 mm copper wire R1 metal film resistor 5.5 × 1.5 mm int. dia. = 3 mm length = 3 mm 390 Ω, 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.51 mm. 2000 Oct 19 7 Philips Semiconductors Preliminary specification BLF2043F C13 C14 C15 C16 UHF power LDMOS transistor C20 C18 C17 C19 Vds L8 C6 C11 Vgs C12 C5 C1 R3 C8 C10 C2 C3 C9 C7 C4 BLF2043F input BLF2043F output 60 60 BLF2043F input BLF2043F input 33 33 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.51 mm. The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2.2 GHz class-AB test circuit. 2000 Oct 19 8 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C 2000 Oct 19 EUROPEAN PROJECTION 9 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2043F DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Oct 19 10 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Portugal: see Spain China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Romania: see Italy Colombia: see South America Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Czech Republic: see Austria Slovakia: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Slovenia: see Italy Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com SCA 70 © Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 603516/02/pp11 Date of release: 2000 Oct 19 Document order number: 9397 750 07657