Fast Recovery Diodes (FRD) MA3D691 Silicon planar type Unit : mm For high-frequency rectification 4.6 ± 0.2 9.9 ± 0.3 3.0 ± 0.5 15.0 ± 0.5 ■ Features +0 1.5 − 0.4 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end 2.9 ± 0.2 2.6 ± 0.1 1.4 ± 0.2 0.8 ± 0.1 0.55 ± 0.15 5.08 ± 0.5 2.54 ± 0.3 ■ Absolute Maximum Ratings Ta = 25°C 1 Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 200 V Non-repetitive peak reverse surge voltage VRSM 200 V Average forward current IF(AV) 10 A Non-repetitive peak forward surge current* IFSM 70 A Junction temperature Tj −40 to +150 °C Storage temperature Tstg −40 to +150 °C 2 1 : Cathode 2 : Anode TO-220D Package (2-pin) Note) * : Half sine-wave; 10 ms/cycle ■ Electrical Characteristics Ta = 25°C Parameter Symbol Repetitive peak reverse current Conditions Min Typ Max Unit IRRM1 VRRM = 200 V, TC = 25°C 100 µA IRRM2 VRRM = 200 V, Tj = 150°C 10 mA Forward voltage (DC) VF IF = 10 A, TC = 25°C 1.00 V Reverse recovery time* trr IF = 1 A, IR = 1 A 100 ns Rth(j-c) 3 °C/W Rth(j-a) 63 °C/W Thermal resistance Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg × cm 3. * : trr measuring circuit 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1 MA3D691 Fast Recovery Diodes (FRD) IF V F VF Ta 10 1.4 10−1 Forward voltage VF (V) −20°C 100°C 25°C 10−2 10−3 1.2 1.0 IF = 10 A 0.8 5A 0.6 1A 0.4 10−4 Terminal capacitance Ct (pF) Ta = 150°C 1 Forward current IF (A) Ct VR 500 1.6 400 300 200 100 0.2 10−5 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 2 1.2 0 −40 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 50 100 150 200 250 Reverse voltage VR (V) 300