PANASONIC MA3U749

Schottky Barrier Diodes (SBD)
MA3U749
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply
6.5 ± 0.1
5.3 ± 0.1
4.35 ± 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1.0 ± 0.2
1.0 ± 0.1
0.1 ± 0.05
0.93 ± 0.1
0.8 max.
2.5 ± 0.1
• Surface mounting type small U-type package
• Low forward rise voltage VF
• Cathode common dual type
0.5 ± 0.1
1.8 ± 0.1
7.3 ± 0.1
■ Features
2.3 ± 0.1
0.5 ± 0.1
0.75 ± 0.1
2.3 ± 0.1
Symbol
Rating
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF(AV)
5
mA
Non-repetitive peak forward
surge current*
IFSM
40
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
4.6 ± 0.1
Unit
1
2
3
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
Note) * : Half sine-wave: 10 ms/cycle
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 40 V, TC = 25°C
1
mA
Forward voltage (DC)
VF
IF = 2.5 A, TC = 25°C
0.55
V
Between junction and case
12.5
°C/W
Thermal
resistance*
Rth(j-c)
Note) 1. Rated input/output frequency: 1 000 MHz
2. * : TC = 25°C
1
MA3U749
Schottky Barrier Diodes (SBD)
IF  V F
Ta = 125°C
104
Forward voltage VF (V)
Forward current IF (mA)
105
0.7
− 20°C
103
IR  VR
VF  Ta
0.8
75°C 25°C
102
10
Reverse current IR (µA)
104
0.6
IF = 5 A
0.5
0.4
2.5 A
0.3
1A
0.2
1
Ta = 125°C
103
75°C
102
25°C
10
0.1
10−1
0
0.2
0.4
0.6
0.8
1.0
0
−40
1.2
Forward voltage VF (V)
1
0
40
80
120
IR  T a
f = 1 MHz
Ta = 25°C
Reverse current IR (µA)
Terminal capacitance Ct (pF)
700
VR = 45 V
20 V
10 V
102
10
600
500
400
300
200
100
1
−40
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
0
10
20
30
40
50
Reverse voltage VR (V)
0
10
20
30
40
50
Reverse voltage VR (V)
Ct  VR
800
103
200
Ambient temperature Ta (°C)
105
104
160
60
60